Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides

2003 ◽  
Vol 82 (26) ◽  
pp. 4758-4760 ◽  
Author(s):  
Martin M. Frank ◽  
Yves J. Chabal ◽  
Glen D. Wilk
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Formation Mechanisms ◽  
Interface Formation ◽  
Gate Oxides ◽  
Layer Deposition

Optimization of precursor pulse time in improving bulk trapping characteristics of atomic-layer-deposition HfO2 gate oxides

2006 ◽  
Vol 88 (8) ◽  
pp. 082901 ◽  
Author(s):  
Mohammad S. Akbar ◽  
Jack C. Lee ◽  
Naim Moumen ◽  
Jeff Peterson
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Pulse Time ◽  
Gate Oxides ◽  
Layer Deposition

Surface Chemistry and Interface Formation during the Atomic Layer Deposition of Alumina from Trimethylaluminum and Water on Indium Phosphide

2013 ◽  
Vol 25 (7) ◽  
pp. 1078-1091 ◽  
Author(s):  
Christoph Adelmann ◽  
Daniel Cuypers ◽  
Massimo Tallarida ◽  
Leonard N. J. Rodriguez ◽  
Astrid De Clercq ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Indium Phosphide ◽  
Surface Chemistry ◽  
Atomic Layer ◽  
Interface Formation ◽  
Layer Deposition

Low interface trap density in scaled bilayer gate oxides on 2D materials via nanofog low temperature atomic layer deposition

2019 ◽  
Vol 463 ◽  
pp. 758-766 ◽  
Author(s):  
Iljo Kwak ◽  
Mahmut Kavrik ◽  
Jun Hong Park ◽  
Larry Grissom ◽  
Bernd Fruhberger ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
2D Materials ◽  
Atomic Layer ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Gate Oxides ◽  
Layer Deposition
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