scholarly journals Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1408
Author(s):  
Slawomir Prucnal ◽  
Jerzy Żuk ◽  
René Hübner ◽  
Juanmei Duan ◽  
Mao Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Electron Concentration ◽  
Ohmic Contacts ◽  
Protective Layer ◽  
Flash Lamp ◽  
Concentration Limit ◽  
Recrystallization Process ◽  
Ion Energy ◽  
Silicon Based ◽  
Effective Carrier

Controlled doping with an effective carrier concentration higher than 1020 cm−3 is a key challenge for the full integration of Ge into silicon-based technology. Such a highly doped layer of both p- and n type is needed to provide ohmic contacts with low specific resistance. We have studied the effect of ion implantation parameters i.e., ion energy, fluence, ion type, and protective layer on the effective concentration of electrons. We have shown that the maximum electron concentration increases as the thickness of the doping layer decreases. The degradation of the implanted Ge surface can be minimized by performing ion implantation at temperatures that are below −100 °C with ion flux less than 60 nAcm−2 and maximum ion energy less than 120 keV. The implanted layers are flash-lamp annealed for 20 ms in order to inhibit the diffusion of the implanted ions during the recrystallization process.

Hydrogen engineering via plasma immersion ion implantation and flash lamp annealing in silicon-based solar cell substrates

2014 ◽  
Vol 115 (6) ◽  
pp. 064505 ◽  
Author(s):  
F. L. Bregolin ◽  
K. Krockert ◽  
S. Prucnal ◽  
L. Vines ◽  
R. Hübner ◽  
...  
Keyword(s):  
Solar Cell ◽  
Ion Implantation ◽  
Flash Lamp ◽  
Plasma Immersion Ion Implantation ◽  
Silicon Based

Rare Earth Ion Implantation for Silicon Based Light Emission

2005 ◽  
Vol 108-109 ◽  
pp. 755-760 ◽  
Author(s):  
Wolfgang Skorupa ◽  
J.M. Sun ◽  
S. Prucnal ◽  
L. Rebohle ◽  
T. Gebel ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Indium Tin Oxide ◽  
Light Emission ◽  
Charge Trapping ◽  
Electrical Performance ◽  
Rare Earth Ion ◽  
Light Emitting ◽  
Silicon Based ◽  
Luminescent Centers

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.

scholarly journals Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

2006 ◽  
Vol 27 (4) ◽  
pp. 205-207 ◽  
Author(s):  
F. Recht ◽  
L. McCarthy ◽  
S. Rajan ◽  
A. Chakraborty ◽  
C. Poblenz ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Gan Hemts ◽  
Activation Annealing

New Electrochemically Protective Layer Based on Nanometric Dielectric Coating for Silicon Based Micro Supercapacitors

2021 ◽  
Vol MA2021-02 (29) ◽  
pp. 896-896
Author(s):  
Marc Dietrich ◽  
Loïc Paillardet ◽  
Anthony Valero ◽  
Nicolas Pauc ◽  
Philippe Azaïs ◽  
...  
Keyword(s):  
Protective Layer ◽  
Dielectric Coating ◽  
Silicon Based

Etching with electron beam-generated plasmas: Selectivity versus ion energy in silicon-based films

2021 ◽  
Vol 39 (3) ◽  
pp. 033002
Author(s):  
S. G. Walton ◽  
D. R. Boris ◽  
S. G. Rosenberg ◽  
H. Miyazoe ◽  
E. A. Joseph ◽  
...  
Keyword(s):  
Electron Beam ◽  
Ion Energy ◽  
Silicon Based

scholarly journals Etch Processing of III-V Nitrides

1999 ◽  
Vol 4 (S1) ◽  
pp. 902-913 ◽  
Author(s):  
Charles R. Eddy
Keyword(s):  
Plasma Etching ◽  
Microwave Power ◽  
Ohmic Contacts ◽  
High Density ◽  
Etching Process ◽  
Ion Energy ◽  
Plasma Etching Process ◽  
Device Processing ◽  
The Impact ◽  
Density Plasma

As III-V nitride devices advance in technological importance, a fundamental understanding of device processing techniques becomes essential. Recent works have exposed various aspects of etch processes. The most recent advances and the greatest remaining challenges in the etching of GaN, AlN, and InN are reviewed. A more detailed presentation is given with respect to GaN high density plasma etching. In particular, the results of parametric and fundamental studies of GaN etching in a high density plasma are described. The effect of ion energy and mass on surface electronic properties is reported. Experimental results identify preferential sputtering as the leading cause of observed surface non-stoichiometry. This mechanism provides excellent surfaces for ohmic contacts to n-type GaN, but presents a major obstacle for Schottky contacts or ohmic contacts to p-type GaN. Chlorine-based discharges minimize this stoichiometry problem by improving the rate of gallium removal from the surface. In an effort to better understand the high density plasma etching process for GaN, in-situ mass spectrometry is employed to study the chlorine-based high density plasma etching process. Gallium chloride mass peaks were monitored in a highly surface sensitive geometry as a function of microwave power (ion flux), total pressure (neutral flux), and ion energy. Microwave power and pressure dependencies clearly demonstrate the importance of reactive ions in the etching of wide band gap materials. The ion energy dependence demonstrates the importance of adequate ion energy to promote a reasonable etch rate (≥100-150 eV). The benefits of ion-assisted chemical etching are diminished for ion energies in excess of 350 V, placing an upper limit to the useful ion energy range for etching GaN. The impact of these results on device processing will be discussed and future needs identified.

Reduction of Density of 4H-SiC / SiO2 Interface Traps by Pre-Oxidation Phosphorus Implantation

2014 ◽  
Vol 778-780 ◽  
pp. 575-578 ◽  
Author(s):  
Tomasz Sledziewski ◽  
Aleksey Mikhaylov ◽  
Sergey A. Reshanov ◽  
Adolf Schöner ◽  
Heiko B. Weber ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Thermal Oxidation ◽  
Secondary Ion Mass Spectrometry ◽  
Interface Traps ◽  
Ion Energy ◽  
Residual P ◽  
Conductance Method ◽  
Secondary Ion

The effect of phosphorus (P) on the electrical properties of the 4H-SiC / SiO2interface was investigated. Phosphorus was introduced by surface-near ion implantation with varying ion energy and dose prior to thermal oxidation. Secondary ion mass spectrometry revealed that only part of the implanted P followed the oxidation front to the interface. A negative flatband shift due to residual P in the oxide was found fromC-Vmeasurements. Conductance method measurements revealed a significant reduction of density of interface trapsDitwith energyEC- Eit> 0.3 V for P+-implanted samples with [P]interface= 1.5 1018cm-3in the SiC layer at the interface.

Ion implantation of Carbon and Silicon into Ge2Sb2Te5: Ion Profiles and Post Crystallization Redistribution

2011 ◽  
Vol 1338 ◽  
Author(s):  
Guy M. Cohen ◽  
Simone Raoux ◽  
Marinus Hopstaken ◽  
Siegfried Maurer
Keyword(s):  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Carbon Doping ◽  
Recrystallization Annealing ◽  
Silicon Doping ◽  
Ion Energy ◽  
Ion Profiles ◽  
Dopant Redistribution ◽  
Doping Profiles ◽  
Secondary Ion

ABSTRACTIon implantation of Ge2Sb2Te5 (GST) enables localized doping of the film by using conventional lithography. Although the doped region dimensions and the doping concentration profile are defined by the opening in the mask and the ion energy, longitudinal and lateral straggling of implanted ions leads to a spread in the ions final location. Additionally, a thermal treatment such as one that induces a phase transition may lead to redistribution of the implanted dopants and further increase the spread. In this work we demonstrate doping of GST by ion implantation. Using Secondary Ion Mass Spectrometry (SIMS) we studied the as-implanted doping profiles obtain by ion implantation of carbon and silicon into GST. We also investigated by SIMS the dopant redistribution following a recrystallization annealing. The as-implanted ion profiles were found to be in fair agreement with TRIM simulation. The dopants profiles show little change after a crystallization annealing at 200°C for silicon doping and at 350°C for carbon doping.

scholarly journals Formation and Characterization of Shallow Junctions in GaAs Made by Ion Implantation and ms‐Range Flash Lamp Annealing

2018 ◽  
Vol 216 (8) ◽  
pp. 1800618
Author(s):  
Juanmei Duan ◽  
Mao Wang ◽  
Lasse Vines ◽  
Roman Böttger ◽  
Manfred Helm ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Flash Lamp ◽  
Shallow Junctions

Plasma-based ion implantation sterilization technique and ion energy estimation

2005 ◽  
Vol 23 (4) ◽  
pp. 1018-1021 ◽  
Author(s):  
T. Tanaka ◽  
S. Watanabe ◽  
K. Shibahara ◽  
S. Yokoyama ◽  
T. Takagi
Keyword(s):  
Ion Implantation ◽  
Energy Estimation ◽  
Ion Energy
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