scholarly journals Formation and Characterization of Shallow Junctions in GaAs Made by Ion Implantation and ms‐Range Flash Lamp Annealing

2018 ◽  
Vol 216 (8) ◽  
pp. 1800618
Author(s):  
Juanmei Duan ◽  
Mao Wang ◽  
Lasse Vines ◽  
Roman Böttger ◽  
Manfred Helm ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Flash Lamp ◽  
Shallow Junctions

Germanium Junctions for Beyond-Si Node Using Flash Lamp Annealing (FLA)

MRS Advances ◽  
2017 ◽  
Vol 2 (51) ◽  
pp. 2921-2926 ◽  
Author(s):  
H. Tanimura ◽  
H. Kawarazaki ◽  
K. Fuse ◽  
M. Abe ◽  
Y. Ito ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Carrier Concentration ◽  
Flash Lamp ◽  
Junction Depth ◽  
High Activation ◽  
Monolithically Integrated ◽  
Implantation Damage ◽  
Shallow Junctions ◽  
High Boron ◽  
Very High

ABSTRACTWe report on the formation of shallow junctions with high activation in both n+/p and p+/n Ge junctions using ion implantation and Flash Lamp Annealing (FLA). The shallowest junction depths (Xj) formed for the n+/p and p+/n junctions were 7.6 nm and 6.1 nm with sheet resistances (Rs) of 860 ohms/sq. and 704 ohms/sq., respectively. By reducing knocked-on oxygen during ion implantation in the n+/p junctions, Rs was decreased by between 5% and 15%. The lowest Rs observed was 235 ohms/sq. with a junction depth of 21.5 nm. Hall measurements clearly revealed that knocked-on oxygen degraded phosphorus activation (carrier concentration). In the p+/n Ge junctions, we show that ion implantation damage induced high boron activation. Using this technique, Rs can be reduced from 475 ohms/sq. to 349 ohms/sq. These results indicate that the potential for forming ultra-shallow n+/p and p+/n junctions in the nanometer range in Ge devices using FLA is very high, leading to realistic monolithically-integrated Ge CMOS devices that can take us beyond Si technology.

Optical, electrical, and chemical characterization of nanostructured InxGa1-xN formed by high fluence In+ ion implantation into GaN

2020 ◽  
pp. 110541
Author(s):  
C.A. Hernández-Gutiérrez ◽  
Yuriy Kudriavtsev ◽  
Dagoberto Cardona ◽  
A.G. Hernández ◽  
J.L. Camas-Anzueto
Keyword(s):  
Ion Implantation ◽  
Chemical Characterization ◽  
High Fluence

A Model to Explain the Variations of “End-of-Range” Defect Densities with Ion Implantation Parameters

1992 ◽  
Vol 279 ◽  
Author(s):  
L. Laanab ◽  
C. Bergaud ◽  
M. M. Faye ◽  
J. Faure ◽  
A. Martinez ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Computer Simulations ◽  
Point Defects ◽  
Numerical Optimization ◽  
Experimental Investigations ◽  
Shallow Junctions ◽  
Quantitative Explanation ◽  
Defect Densities

ABSTRACTComputer simulations in conjunction with TEM experiments have been used to test the different models usually adopted in the literature to explain the formation of “End Of Range”(EOR) defects which appear after annealing of preamorphized silicon layers. Only one survives careful experimental investigations involving Si+, Ge+, Sn+ amorphization at RT and LNT. The “excess-interstitial” model appears relevant at least for a semi-quantitative explanation of the source of point-defects which after recombination and agglomeration, lead to the formation of these defects. This model may be used for the numerical optimization of conditions for the production of high performances ullra-shallow junctions.

Fourier transform infra-red characterization of carbon onions produced by carbon-ion implantation

1998 ◽  
Vol 285 (3-4) ◽  
pp. 216-220 ◽  
Author(s):  
T. Cabioc'h ◽  
A. Kharbach ◽  
A. Le Roy ◽  
J.P. Rivière
Keyword(s):  
Fourier Transform ◽  
Ion Implantation ◽  
Carbon Ion ◽  
Infra Red ◽  
Carbon Onions

Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

1991 ◽  
Vol 235 ◽  
Author(s):  
Ying Wu ◽  
W. Savin ◽  
T. Fink ◽  
N. M. Ravindra ◽  
R. T. Lareau ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Furnace Annealing ◽  
Si Substrates ◽  
Conventional Furnace ◽  
Mass Spec ◽  
Current Voltage ◽  
Shallow Junctions ◽  
Current Voltage Characteristics ◽  
Secondary Ion

ABSTRACTExperimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.

Structural Characterization of Thin 3C-SiC Films Annealed by the Flash Lamp Process

2004 ◽  
Vol 457-460 ◽  
pp. 351-354 ◽  
Author(s):  
Efstathios K. Polychroniadis ◽  
J. Stoemenos ◽  
Gabriel Ferro ◽  
Yves Monteil ◽  
D. Panknin ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Flash Lamp ◽  
Sic Films

Electrical and optical characterization of defect levels caused in InGaAs by boron ion implantation

1993 ◽  
Vol 80-81 ◽  
pp. 632-635
Author(s):  
Shin'ichi Yamamura ◽  
Tadamasa Kimura ◽  
Shigemi Yugo ◽  
Riichiro Saito ◽  
Michio Murata ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Optical Characterization ◽  
Defect Levels
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