Hydrogen engineering via plasma immersion ion implantation and flash lamp annealing in silicon-based solar cell substrates

2014 ◽  
Vol 115 (6) ◽  
pp. 064505 ◽  
Author(s):  
F. L. Bregolin ◽  
K. Krockert ◽  
S. Prucnal ◽  
L. Vines ◽  
R. Hübner ◽  
...  
Keyword(s):  
Solar Cell ◽  
Ion Implantation ◽  
Flash Lamp ◽  
Plasma Immersion Ion Implantation ◽  
Silicon Based

scholarly journals Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1408
Author(s):  
Slawomir Prucnal ◽  
Jerzy Żuk ◽  
René Hübner ◽  
Juanmei Duan ◽  
Mao Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Electron Concentration ◽  
Ohmic Contacts ◽  
Protective Layer ◽  
Flash Lamp ◽  
Concentration Limit ◽  
Recrystallization Process ◽  
Ion Energy ◽  
Silicon Based ◽  
Effective Carrier

Controlled doping with an effective carrier concentration higher than 1020 cm−3 is a key challenge for the full integration of Ge into silicon-based technology. Such a highly doped layer of both p- and n type is needed to provide ohmic contacts with low specific resistance. We have studied the effect of ion implantation parameters i.e., ion energy, fluence, ion type, and protective layer on the effective concentration of electrons. We have shown that the maximum electron concentration increases as the thickness of the doping layer decreases. The degradation of the implanted Ge surface can be minimized by performing ion implantation at temperatures that are below −100 °C with ion flux less than 60 nAcm−2 and maximum ion energy less than 120 keV. The implanted layers are flash-lamp annealed for 20 ms in order to inhibit the diffusion of the implanted ions during the recrystallization process.

scholarly journals p-Type a-Si:H Doping Using Plasma Immersion Ion Implantation for Silicon Heterojunction Solar Cell Application

Solar RRL ◽  
2017 ◽  
Vol 1 (2) ◽  
pp. 1600007 ◽  
Author(s):  
Tristan Carrere ◽  
Delfina Muñoz ◽  
Marianne Coig ◽  
Christophe Longeaud ◽  
Jean-Paul Kleider
Keyword(s):  
Solar Cell ◽  
Ion Implantation ◽  
Type A ◽  
Heterojunction Solar Cell ◽  
Solar Cell Application ◽  
Silicon Heterojunction Solar Cell ◽  
Plasma Immersion Ion Implantation ◽  
P Type

scholarly journals Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processing

2019 ◽  
Vol 27 (12) ◽  
pp. 1081-1091 ◽  
Author(s):  
Adeline Lanterne ◽  
Thibaut Desrues ◽  
Coralie Lorfeuvre ◽  
Marianne Coig ◽  
Frank Torregrosa ◽  
...  
Keyword(s):  
Solar Cell ◽  
Ion Implantation ◽  
Annealing Temperature ◽  
Cell Processing ◽  
Plasma Immersion Ion Implantation

Use of Transparent Conductive Oxide Materials with Low Indices of Refraction in Amorphous Silicon-Based Solar Cell Technology

2005 ◽  
Vol 862 ◽  
Author(s):  
Scott J. Jones ◽  
Joachim Doehler ◽  
Tongyu Liu ◽  
David Tsu ◽  
Jeff Steele ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Transparent Conductive Oxide ◽  
Open Circuit ◽  
Long Term Stability ◽  
Back Reflectors ◽  
Stability Issues ◽  
Silicon Based ◽  
Solar Cell Technology

AbstractNew types of transparent conductive oxides with low indices of refraction have been developed for use in optical stacks for the amorphous silicon (a-Si) solar cell and other thin film applications. The alloys are ZnO based with Si and MgF added to reduce the index of the materials through the creation of SiO2 or MgF2, with n=1.3-1.4, or the addition of voids in the materials. Alloys with 12-14% Si or Mg have indices of refraction at λ=800nm between 1.6 and 1.7. These materials are presently being used in optical stacks to enhance light scattering by Al/multi-layer/ZnO back reflectors in a-Si based solar cells to increase light absorption in the semiconductor layers and increase open circuit currents and boost device efficiencies. In contrast to Ag/ZnO back reflectors which have long term stability issues due to electromigration of Ag, these Al based back reflectors should be stable and usable in manufactured PV products. In this manuscript, structural properties for the materials will be reported as well as the performance of solar cell devices made using these new types of materials.

A recent overview on the porphyrin-based π-extended small molecules as donors and acceptors for high-performance organic solar cells

2021 ◽  
Author(s):  
Venkatesh Piradi ◽  
Feng Yan ◽  
Xunjin Zhu ◽  
Wai-Yeung Raymond Wong
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Small Molecules ◽  
Organic Solar Cells ◽  
High Performance ◽  
Cost Effective ◽  
Effective Alternative ◽  
The Past ◽  
Cost Effective Alternative ◽  
Silicon Based

Organic solar cells (OSCs) have been considered as a promising cost-effective alternative to silicon-based solar cell counterparts due to their lightweight, mechanical flexibility, and easy fabrication features. Over the past...

TiN/ZrO2 multilayers synthesized on GCr15 bearing steel using plasma immersion ion implantation and deposition

2007 ◽  
Vol 201 (15) ◽  
pp. 6615-6618 ◽  
Author(s):  
Tao Sun ◽  
Langping Wang ◽  
Yonghao Yu ◽  
Yuhang Wang ◽  
Xiaofeng Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Bearing Steel ◽  
Gcr15 Bearing Steel ◽  
Plasma Immersion Ion Implantation
Sign in / Sign up

Export Citation Format

Share Document