Plasma-based ion implantation sterilization technique and ion energy estimation

2005 ◽  
Vol 23 (4) ◽  
pp. 1018-1021 ◽  
Author(s):  
T. Tanaka ◽  
S. Watanabe ◽  
K. Shibahara ◽  
S. Yokoyama ◽  
T. Takagi
Keyword(s):  
Ion Implantation ◽  
Energy Estimation ◽  
Ion Energy

scholarly journals Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1408
Author(s):  
Slawomir Prucnal ◽  
Jerzy Żuk ◽  
René Hübner ◽  
Juanmei Duan ◽  
Mao Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Electron Concentration ◽  
Ohmic Contacts ◽  
Protective Layer ◽  
Flash Lamp ◽  
Concentration Limit ◽  
Recrystallization Process ◽  
Ion Energy ◽  
Silicon Based ◽  
Effective Carrier

Controlled doping with an effective carrier concentration higher than 1020 cm−3 is a key challenge for the full integration of Ge into silicon-based technology. Such a highly doped layer of both p- and n type is needed to provide ohmic contacts with low specific resistance. We have studied the effect of ion implantation parameters i.e., ion energy, fluence, ion type, and protective layer on the effective concentration of electrons. We have shown that the maximum electron concentration increases as the thickness of the doping layer decreases. The degradation of the implanted Ge surface can be minimized by performing ion implantation at temperatures that are below −100 °C with ion flux less than 60 nAcm−2 and maximum ion energy less than 120 keV. The implanted layers are flash-lamp annealed for 20 ms in order to inhibit the diffusion of the implanted ions during the recrystallization process.

Reduction of Density of 4H-SiC / SiO2 Interface Traps by Pre-Oxidation Phosphorus Implantation

2014 ◽  
Vol 778-780 ◽  
pp. 575-578 ◽  
Author(s):  
Tomasz Sledziewski ◽  
Aleksey Mikhaylov ◽  
Sergey A. Reshanov ◽  
Adolf Schöner ◽  
Heiko B. Weber ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Thermal Oxidation ◽  
Secondary Ion Mass Spectrometry ◽  
Interface Traps ◽  
Ion Energy ◽  
Residual P ◽  
Conductance Method ◽  
Secondary Ion

The effect of phosphorus (P) on the electrical properties of the 4H-SiC / SiO2interface was investigated. Phosphorus was introduced by surface-near ion implantation with varying ion energy and dose prior to thermal oxidation. Secondary ion mass spectrometry revealed that only part of the implanted P followed the oxidation front to the interface. A negative flatband shift due to residual P in the oxide was found fromC-Vmeasurements. Conductance method measurements revealed a significant reduction of density of interface trapsDitwith energyEC- Eit> 0.3 V for P+-implanted samples with [P]interface= 1.5 1018cm-3in the SiC layer at the interface.

Ion implantation of Carbon and Silicon into Ge2Sb2Te5: Ion Profiles and Post Crystallization Redistribution

2011 ◽  
Vol 1338 ◽  
Author(s):  
Guy M. Cohen ◽  
Simone Raoux ◽  
Marinus Hopstaken ◽  
Siegfried Maurer
Keyword(s):  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Carbon Doping ◽  
Recrystallization Annealing ◽  
Silicon Doping ◽  
Ion Energy ◽  
Ion Profiles ◽  
Dopant Redistribution ◽  
Doping Profiles ◽  
Secondary Ion

ABSTRACTIon implantation of Ge2Sb2Te5 (GST) enables localized doping of the film by using conventional lithography. Although the doped region dimensions and the doping concentration profile are defined by the opening in the mask and the ion energy, longitudinal and lateral straggling of implanted ions leads to a spread in the ions final location. Additionally, a thermal treatment such as one that induces a phase transition may lead to redistribution of the implanted dopants and further increase the spread. In this work we demonstrate doping of GST by ion implantation. Using Secondary Ion Mass Spectrometry (SIMS) we studied the as-implanted doping profiles obtain by ion implantation of carbon and silicon into GST. We also investigated by SIMS the dopant redistribution following a recrystallization annealing. The as-implanted ion profiles were found to be in fair agreement with TRIM simulation. The dopants profiles show little change after a crystallization annealing at 200°C for silicon doping and at 350°C for carbon doping.

Understanding ion beam synthesis of nanostructures: Modeling and atomistic simulations

2000 ◽  
Vol 647 ◽  
Author(s):  
M. Strobel ◽  
K.-H. Heinig ◽  
W. Möller
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Monte Carlo Model ◽  
Atomistic Simulations ◽  
Ion Energy ◽  
Lattice Monte Carlo ◽  
Supersaturated Solid Solutions ◽  
Ion Beam Synthesis ◽  
Thermodynamic Effects ◽  
Low Dimensional

AbstractIon implantation, specified by parameters like ion energy, ion fluence, ion flux and sub-strate temperature, has become a well-established tool to synthesize buried low-dimensional nanostructures. In general, in ion beam synthesis the evolution of nanostructures is determined by the competition between ballistic and thermodynamic effects. A kinetic 3D lattice Monte-Carlo model is introduced, which allows for a proper incorporation of collisional mixing and phase separation within supersaturated solid-solutions. It is shown, that for both the ballistically and thermodynamically dominated regimes, the Gibbs-Thomson relation is the key ingredient in understanding nanocluster evolution. Various aspects of precipitate evolution during implantation, formation of ordered arrays of nanophase domains by focused ion implantation and compound nanocluster synthesis are discussed.

Electrical Properties of Ion Implanted Poly (P-Phenylene Sulfide)

1981 ◽  
Vol 7 ◽  
Author(s):  
J.S. Abel ◽  
H. Mazurek ◽  
D.R. Day ◽  
E.W. Maby ◽  
S.D. Senturia ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Ambient Conditions ◽  
Ion Energy ◽  
Energy Fluence ◽  
Novel Technique ◽  
Conductivity Increase ◽  
Enhanced Conductivity ◽  
Phenylene Sulfide

ABSTRACTIon-implantation can increase the electrical conductivity of the polymer poly (p-phenylene sulfide) (PPS) by ~ 14 orders of magnitude. This conductivity increase, which is stable under ambient conditions, is studied as a function of temperature, ion energy, fluence and species, using a novel technique, based on microelectronics processing, capable of accurately measuring conductivities as low as 10−10 (Ω-cm)−1. Mechanisms for the enhanced conductivity of PPS are discussed in relation to our measurements.

Effects of Ion Energy Control on Production of Nitrogen–C60Compounds by Ion Implantation

2006 ◽  
Vol 45 (10B) ◽  
pp. 8340-8343 ◽  
Author(s):  
Shigeyuki Abe ◽  
Genta Sato ◽  
Toshiro Kaneko ◽  
Takamichi Hirata ◽  
Rikizo Hatakeyama ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Energy Control ◽  
Ion Energy

Surface Modification of Soda Glass by Recoil Ion Implantation of In2O3.

1985 ◽  
Vol 45 ◽  
Author(s):  
K. C. Cadien ◽  
B. B. Harbison
Keyword(s):  
Surface Modification ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Energy Deposition ◽  
Optical And Electrical Properties ◽  
Deposition Rates ◽  
Ion Energy ◽  
Soda Glass ◽  
Glass Substrates

ABSTRACTRecoil ion implantation of In2O3 into soda glass substrates has been investigated. Increased adhesion results, while the optical and electrical properties are altered. Large energy deposition rates can lead to the reduction of the oxide, thus decreasing visible transmission. Thermal annealing in air results in the recovery of optical and electrical properties. The influence of ion energy and dose on the modification of the glass has been examined.

Comparison of Ranges for Al Implantations into 4H-SiC (0001) Using Channeled Ions and an Ion Energy in the Bethe-Bloch Region

2019 ◽  
Vol 963 ◽  
pp. 394-398 ◽  
Author(s):  
Kazuhiro Mochizuki ◽  
Ryoji Kosugi ◽  
Yoshiyuki Yonezawa ◽  
Hajime Okumura
Keyword(s):  
Ion Implantation ◽  
Epitaxial Growth ◽  
Power Devices ◽  
Ion Energy ◽  
Projected Range ◽  
Repeat Count

Ranges for Al implantations into 4H-SiC (0001) were compared between channeled-ion implantation (without using a MeV implanter) and non-channeled ion implantation using an ion energy E0 in the Bethe–Bloch region (IIBB). Since the latter (i.e., projected range of 7.5 μm at E0 = 26 MeV) was larger than the former (i.e., maximum channeled range of 3.4 μm at E0 = 900 keV), IIBB was concluded to be suitable to minimize the repeat count of epitaxial growth/ion implantation steps used in the fabrication of 4H-SiC superjunction power devices.

Surface Slip Retardation by ion Implantation

1987 ◽  
Vol 93 ◽  
Author(s):  
W. S. Samipath ◽  
F. M. Kustas ◽  
R. Wei ◽  
P. J. Wilbur
Keyword(s):  
Stainless Steel ◽  
Ion Implantation ◽  
Slip Line ◽  
Line Formation ◽  
Simple Test ◽  
Near Surface ◽  
Ion Energy ◽  
Surface Slip ◽  
Current Densities ◽  
Nitrogen Ion

ABSTRACTIon implantation is shown to retard surface slip and thereby induce improvements in wear and fatigue resistance of metals. A simple test is described which can be used to study the effects of ion implantation in retarding motion of dislocations in the near-surface regions of metals. In this test, regions of annealed and etched surfaces of metals are masked and implanted with ions. The specimens are then deformed until significant plastic deformation is introduced and the slip-lines are observed under the microscope. Evidence of improved resistance to slip-line formation in nitrogen ion implanted surface regions is presented for copper, α-iron and 303 stainless steel. The test is shown to be a useful tool for comparing the effects of ion implantation conditions on surface slip retardation, since adjacent regions of the surface can be implanted to different conditions and the resistance to slip line formation in the different regions can be compared. For example, the resistance to slip line formation in 303 stainless steel was found to be greater in regions that were implanted at ultrahigh current densities (1500 μA/cm2) than in regions implanted at lower current densities (100 μA/cm2) to the same dose and at the same ion energy.

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