Etching with electron beam-generated plasmas: Selectivity versus ion energy in silicon-based films

2021 ◽  
Vol 39 (3) ◽  
pp. 033002
Author(s):  
S. G. Walton ◽  
D. R. Boris ◽  
S. G. Rosenberg ◽  
H. Miyazoe ◽  
E. A. Joseph ◽  
...  
Keyword(s):  
Electron Beam ◽  
Ion Energy ◽  
Silicon Based

scholarly journals Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1408
Author(s):  
Slawomir Prucnal ◽  
Jerzy Żuk ◽  
René Hübner ◽  
Juanmei Duan ◽  
Mao Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Electron Concentration ◽  
Ohmic Contacts ◽  
Protective Layer ◽  
Flash Lamp ◽  
Concentration Limit ◽  
Recrystallization Process ◽  
Ion Energy ◽  
Silicon Based ◽  
Effective Carrier

Controlled doping with an effective carrier concentration higher than 1020 cm−3 is a key challenge for the full integration of Ge into silicon-based technology. Such a highly doped layer of both p- and n type is needed to provide ohmic contacts with low specific resistance. We have studied the effect of ion implantation parameters i.e., ion energy, fluence, ion type, and protective layer on the effective concentration of electrons. We have shown that the maximum electron concentration increases as the thickness of the doping layer decreases. The degradation of the implanted Ge surface can be minimized by performing ion implantation at temperatures that are below −100 °C with ion flux less than 60 nAcm−2 and maximum ion energy less than 120 keV. The implanted layers are flash-lamp annealed for 20 ms in order to inhibit the diffusion of the implanted ions during the recrystallization process.

scholarly journals Surface treatment by the ion flow from electron beam generated plasma in the forevacuum pressure range

2018 ◽  
Vol 143 ◽  
pp. 03008 ◽  
Author(s):  
Aleksandr Klimov ◽  
Aleksey Zenin
Keyword(s):  
Magnetic Field ◽  
Electron Beam ◽  
Pressure Range ◽  
Alumina Ceramics ◽  
Ion Energy ◽  
Ion Flow ◽  
Beam Plasma ◽  
Flow Formation ◽  
Beam Parameters ◽  
Current Energy

The paper presents research results of peculiarities of gas ion flows usage and their generation from large plasma formation (>50 sq.cm) obtained by electron beam ionization of gas in the forevacuum pressure range. An upgraded source was used for electron beam generation, which allowed obtaining ribbon electron beam with no transmitting magnetic field. Absence of magnetic field in the area of ion flow formation enables to obtain directed ion flows without distorting their trajectories. In this case, independent control of current and ion energy is possible. The influence of electron beam parameters on the parameters of beam plasma and ion flow – current energy and density – was determined. The results of alumina ceramics treatment with a beam plasma ions flow are given.

scholarly journals Development of a Silicon Based Electron Beam Transmission Window for Use in a KrF Excimer Laser System

2002 ◽  
Author(s):  
C.A. Gentile ◽  
H.M. Fan ◽  
J.W. Hartfield ◽  
R.J. Hawryluk ◽  
F. Hegeler ◽  
...  
Keyword(s):  
Electron Beam ◽  
Excimer Laser ◽  
Laser System ◽  
Transmission Window ◽  
Beam Transmission ◽  
Krf Excimer Laser ◽  
Silicon Based

Electron beam deposited lead-lanthanum-zirconate-titanate thin films for silicon based device applications

1996 ◽  
Vol 79 (2) ◽  
pp. 1008 ◽  
Author(s):  
B. Panda ◽  
S. K. Ray ◽  
A. Dhar ◽  
A. Sarkar ◽  
D. Bhattacharya ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Lead Lanthanum Zirconate Titanate ◽  
Lanthanum Zirconate ◽  
Zirconate Titanate ◽  
Device Applications ◽  
Silicon Based

Nano-silicon based photonic crystal stamps with electron beam lithography (EBL) technology

2010 ◽  
Author(s):  
Reyhaneh Jannesari ◽  
Iris Bergmair ◽  
Saeid Zamiri ◽  
Kurt Hingerl
Keyword(s):  
Electron Beam ◽  
Photonic Crystal ◽  
Electron Beam Lithography ◽  
Nano Silicon ◽  
Silicon Based

Fabrication of nanopores in multi-layered silicon-based membranes using focused electron beam induced etching with XeF2 gas

2015 ◽  
Vol 183 (3) ◽  
pp. 987-994 ◽  
Author(s):  
Yael Liebes-Peer ◽  
Vedran Bandalo ◽  
Ünsal Sökmen ◽  
Marc Tornow ◽  
Nurit Ashkenasy
Keyword(s):  
Electron Beam ◽  
Silicon Based

Fracture Property Improvements of a Nanoporous Thin Film Via Post Deposition Bond Modifications

2005 ◽  
Vol 863 ◽  
Author(s):  
Jeannette M. Jacques ◽  
Ting Y. Tsui ◽  
Andrew J. McKerrow ◽  
Robert Kraft
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Mechanical Strength ◽  
Crack Growth ◽  
Dielectric Films ◽  
Linear Relationships ◽  
Organosilicate Glass ◽  
Catastrophic Fracture ◽  
Electron Beam Curing ◽  
Silicon Based

AbstractFor 90 nm node devices, the group of materials known as organosilicate glass (OSG) has emerged as the predominant choice for intermetal dielectrics. A potential failure mechanism for this class of low-k dielectric films during the manufacturing process is catastrophic fracture due to channel cracking. The use of an electron beam curing process is being investigated for improvement in the mechanical strength of these silicon-based materials. Within this work, the effects of curing dose (micro-C/cm2) upon the mechanical properties of OSG thin films were characterized. For a set process voltage and current, linear relationships exist between the dose and several mechanical film properties. Channel crack growth velocities were also measured for these cured materials. As the cure dose is increased, the crack growth rate decreases according to a power law relationship. The structural film changes induced by the electron beam cure process are addressed, focusing on their impact upon the mechanical strength of OSG thin films.

Ion energy distribution in an electron beam ion trap inferred from simulations of the trapped ion cloud

2022 ◽  
Vol 105 (1) ◽  
Author(s):  
Michael Hahn ◽  
Thusitha Arthanayaka ◽  
Peter Beiersdorfer ◽  
Gregory V. Brown ◽  
Daniel W. Savin
Keyword(s):  
Electron Beam ◽  
Energy Distribution ◽  
Ion Trap ◽  
Ion Energy ◽  
Ion Energy Distribution ◽  
Trapped Ion ◽  
Electron Beam Ion Trap ◽  
Ion Cloud
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