scholarly journals Optimization of TSV Leakage in Via-Middle TSV Process for Wafer-Level Packaging

Electronics ◽  
2021 ◽  
Vol 10 (19) ◽  
pp. 2370
Author(s):  
Xuanjie Liu ◽  
Qingqing Sun ◽  
Yiping Huang ◽  
Zheng Chen ◽  
Guoan Liu ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Cost Effective ◽  
Cmos Process ◽  
Semiconductor Technology ◽  
Wafer Level ◽  
Wafer Level Packaging ◽  
Promising Solution ◽  
Leakage Failure ◽  
Wafer Level Package ◽  
Level Process

Through silicon via (TSV) offers a promising solution for the vertical connection of chip I/O, which enables smaller and thinner package sizes and cost-effective products by using wafer-level packaging instead of a chip-level process. However, TSV leakage has become a critical concern in the BEOL process. In this paper, a Cu-fulfilled via-middle TSV with 100 µm depth embedded in 0.18 µm CMOS process for sensor application is presented, focusing on the analysis and optimization of TSV leakage. By using etch process, substrate defect, and thermal processing co-optimization, TSV leakage failure can be successfully avoided, which can be very instructive for the improvement in TSV wafer-level package yield as well as device performance in advanced semiconductor technology.

Parametric Design and Reliability Analysis of WIT Wafer Level Packaging

2000 ◽  
Author(s):  
Y. T. Lin ◽  
P. J. Tang ◽  
K. N. Chiang
Keyword(s):  
Reliability Analysis ◽  
Flip Chip ◽  
Parametric Design ◽  
Material Selection ◽  
New Technology ◽  
Rapid Expansion ◽  
Wafer Level ◽  
Good Reliability ◽  
Wafer Level Packaging ◽  
Wafer Level Package

Abstract The demands of electronic packages toward lower profile, lighter weight, and higher density of I/O lead to rapid expansion in the field of flip chip, chip scale package (CSP) and wafer level packaging (WLP) technologies. The urgent needs of high I/O density and good reliability characteristic lead to the evolution of the ultra high-density type of non-solder interconnection such as the wire interconnect technology (WIT). The new technology using copper posts to replace the solder bumps as interconnections shown a great improvement in the reliability life. Moreover, this type of wafer level package could achieve higher I/O density, as well as ultra fine pitch. This research will focus on the reliability analysis of the WIT package structures in material selection and structural design, etc. This research will use finite element method to analyze the physical behavior of packaging structures under thermal cycling condition to compare the reliability characteristics of conventional wafer level package and WIT packages. Parametric studies of specific parameters will be performed, and the plastic and temperature dependent material properties will be applied to all of the models.

scholarly journals Wafer Level Packaging Technology Applied to Pixel Detectors

2021 ◽  
Vol 9 ◽  
Author(s):  
Paolo Conci ◽  
Giovanni Darbo ◽  
Andrea Gaudiello ◽  
Claudia Gemme ◽  
Stefano Girardi ◽  
...  
Keyword(s):  
High Energy Physics ◽  
High Energy ◽  
Wafer Level ◽  
Wafer Level Packaging ◽  
Technical Requirements ◽  
Pixel Detectors ◽  
Single Sensor ◽  
Wafer Processing ◽  
Wafer Level Package ◽  
Energy Physics

Pixel technology is commonly used in the tracking systems of High Energy Physics detectors with physical areas that have largely increased in the last decades. To ease the production of several square meters of sensitive area, the possibility of using the industrial Wafer Level Packaging to reassemble good single sensor tiles from multiple wafers into a reconstructed full wafer is investigated. This process reconstructs wafers by compression molding using silicon charged epoxy resin. We tested high glass transition temperature low-stress epoxy resins filled with silica particles to best match the thermal expansion of the silicon die. These resins are developed and characterized for industrial processes, designed specifically for fan-out wafer-level package and panel-level packaging. In order to be compatible with wafer processing during the hybridization of the pixel detectors, such as the bump-bonding, the reconstructed wafer must respect challenging technical requirements. Wafer planarity, tile positioning accuracy, and overall thickness are amongst the main ones. In this paper the description of the process is given and preliminary results on a few reconstructed wafers using dummy tiles are reported. Strategies for Wafer Level Packaging improvements are discussed together with future applications to 3D sensors or CMOS pixel detectors.

Through Silicon Via Technology: Cost effective Cu-TSV Interconnects by EMC3D and Technical Challenges with Cu-TSV

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 000425-000445
Author(s):  
Paul Siblerud ◽  
Rozalia Beica ◽  
Bioh Kim ◽  
Erik Young
Keyword(s):  
Low Cost ◽  
Cost Effective ◽  
High Yield ◽  
Integrated Process ◽  
Wafer Level ◽  
Through Silicon Via ◽  
Wafer Level Packaging ◽  
Current State ◽  
Future Technologies ◽  
Ic Technology

The development of IC technology is driven by the need to increase performance and functionality while reducing size, power and cost. The continuous pressure to meet those requirements has created innovative, small, cost-effective 3-D packaging technologies. 3-D packaging can offer significant advantages in performance, functionality and form factor for future technologies. Breakthrough in wafer level packaging using through silicon via technology has proven to be technologically beneficial. Integration of several key and challenging process steps with a high yield and low cost is key to the general adoption of the technology. This paper will outline the breakthroughs in cost associated with an iTSV or Via-Mid structure in a integrated process flow. Key process technologies enabling 3-D chip:Via formationInsulator, barrier and seed depositionCopper filling (plating),CMPWafer thinningDie to Wafer/chip alignment, bonding and dicing This presentation will investigate these techniques that require interdisciplinary coordination and integration that previously have not been practiced. We will review the current state of 3-D interconnects and the of a cost effective Via-first TSV integrated process.

Cost Comparison of Fan-out Wafer Level Packaging and Flip Chip Packaging

2017 ◽  
Vol 2017 (DPC) ◽  
pp. 1-37 ◽  
Author(s):  
Amy Lujan
Keyword(s):  
Flip Chip ◽  
Cost Effective ◽  
Cost Comparison ◽  
Cost Modeling ◽  
Wafer Level ◽  
Design Features ◽  
Wafer Level Packaging ◽  
Flip Chip Packaging ◽  
The Right ◽  
The Cost

In recent years, there has been increased focus on fan-out wafer level packaging with the growing inclusion of a variety of fan-out wafer level packages in mobile products. While fan-out wafer level packaging may be the right solution for many designs, it is not always the lowest cost solution. The right packaging choice is the packaging technology that meets design requirements at the lowest cost. Flip chip packaging, a more mature technology, continues to be an alternative to fan-out wafer level packaging. It is important for many in the electronic packaging industry to be able to determine whether flip chip or fan-out wafer level packaging is the most cost-effective option. This paper will compare the cost of flip chip and fan-out wafer level packaging across a variety of designs. Additionally, the process flows for each technology will be introduced and the cost drivers highlighted. A variety of package sizes, die sizes, and design features will be covered by the cost comparison. Yield is a key component of cost and will also be considered in the analysis. Activity based cost modeling will be used for this analysis. With this type of cost modeling, a process flow is divided into a series of activities, and the total cost of each activity is accumulated. The cost of each activity is determined by analyzing the following attributes: time required, labor required, material required (consumable and permanent), capital required, and yield loss. The goal of this cost comparison is to determine which design features drive a design to be packaged more cost-effectively as a flip chip package, and which design features result in a lower cost fan-out wafer level package.

A Low-Loss and High-Isolation Transformer-Based mm-Wave SPDT with Integrated Fan-out Wafer Level Packaging

2019 ◽  
Vol 29 (07) ◽  
pp. 2050115
Author(s):  
Xing Quan ◽  
Jiang Luo ◽  
Guodong Su ◽  
Kai Jing ◽  
Jinsong Zhan
Keyword(s):  
Design Method ◽  
Control Device ◽  
Secondary Coil ◽  
Cmos Process ◽  
Wafer Level ◽  
Low Loss ◽  
High Isolation ◽  
Wafer Level Packaging ◽  
Isolation Transformer ◽  
Better Than

This paper proposes a low-loss and high-isolation transformer (TF)-based mm-wave single-pole double-throw (SPDT) switch. The center-tapped technique is employed at the secondary coil of TF to improve isolation performance. The TF is implemented with the metals in redistribution layers (RDLs) in integrated fan-out (InFO) wafer level packaging technology to obtain low insertion loss (IL) and small chip size as the TF usually dominates the area of SPDT. The control device of the SPDT is realized in 40[Formula: see text]nm bulk CMOS process. The simulated result shows the proposed SPDT achieves a minimum IL of 1.34[Formula: see text]dB and the IL is less than 2.2[Formula: see text]dB at 24–31[Formula: see text]GHz. The isolations are better than 27[Formula: see text]dB between two double-throw ports and better than 20[Formula: see text]dB between single-pole and double-throw ports, respectively. The proposed SPDT has a compact silicon size of 220[Formula: see text][Formula: see text] (with PADs) and its return losses are better than [Formula: see text]9[Formula: see text]dB at 24–31[Formula: see text]GHz and. This work explores a new chip-package co-design method for the SPDT and may have some guidance for the co-design of SPDT and antenna in package (AiP).

Wafer Level Package for MEMS with TSVs and Hermetic Seal

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 002314-002335
Author(s):  
Akinori Shiraishi ◽  
Mitsutoshi Higashi ◽  
Kei Murayama ◽  
Yuichi Taguchi ◽  
Kenichi Mori
Keyword(s):  
Silicon Wafer ◽  
Adhesive Bonding ◽  
Anodic Bonding ◽  
Back Side ◽  
Wafer Level ◽  
Wafer Level Packaging ◽  
Hermetic Seal ◽  
Mems Device ◽  
Bonding Method ◽  
Wafer Level Package

In recent years, downsizing of MEMS package and high accuracy MEMS device mounting have been strongly required from expanding applications that using MEMS not only for industrial and automobile but also for consumer typified mobile phone. In order to achieve that, it is appropriate to use Silicon package that can be mounted at wafer level packaging. Silicon package is made of monocrystal silicon wafer. The deep cavity is fabricated on monocrystal silicon wafer by Wet or Dry etching. And MEMS device can be mounted on the cavity. The electrical connecting between front side and back side of cavity portion is achieved by TSVs that located on the bottom of cavity. Hermetic seal can be achieved by using glass or silicon wafer bonding method. By using a driver device wafer (before dicing) as the cap for hermetic seal, smaller size and smaller number of parts module can be fabricated. In this report, methods and designs for hermetic seal with wafer level process were examined. Methods that applied were polyimide adhesive bonding, anodic bonding and Au-In solder bonding. Location of TSVs on the bottom of cavity and thickness of diaphragm with TSVs was also examined. Silicon package for piezo type gyro MEMS that designed by the result of evaluation was fabricated. This package used optimized Au-In solder bonding for hermetic seal and optimized location of TSVs for interconnection. That was designed over 50% thinner than conventional ceramic packages. Characteristics of hermetic seal were evaluated by Q factor of gyro MEMS that mounted inside of the silicon package. It is confirmed that performance of sealing are good enough for running of the MEMS.

Optimization of laser release layer, glass carrier, and organic build-up layer to enable RDL-first fan-out wafer-level packaging

2016 ◽  
Vol 2016 (1) ◽  
pp. 000190-000195 ◽  
Author(s):  
Alvin Lee ◽  
Jay Su ◽  
Baron Huang ◽  
Ram Trichur ◽  
Dongshun Bai ◽  
...  
Keyword(s):  
High Speed ◽  
Process Integration ◽  
Cost Effective ◽  
Wafer Level ◽  
Molding Compound ◽  
Fine Line ◽  
Glass Substrates ◽  
Laser Ablation Process ◽  
Wafer Level Packaging ◽  
Increasing Demand

Abstract With increasing demand for mobile devices to be lighter and thinner and consume less power while operating at high speed and high bandwidth, many equipment suppliers and assembly participants have invested great efforts to achieve fine-line fan-out wafer-level packaging (FOWLP). However, the inherent warp of reconstituted wafers, which can contribute to poor die placement accuracy and/or delamination at the interface of the build-up layer and carrier, remains a major challenge. In this study, the interactions among laser release layer, glass carrier, and build-up layer were evaluated for optimization of redistribution layer (RDL)–first FOWLP as a foundation to move toward fine-line FOWLP. In this study, a series of experiments incorporating glass carrier, laser release layer, and build-up layers were carried out to determine the optimal setup for RDL-first FOWLP. First, glass carriers (300 mm × 300 mm × 0.7 mm) with coefficients of thermal expansion of 3 and 8 ppm/°C were treated with 150-nm laser release layers. After deposition of 0.1 μm of sacrificial material on the glass carrier, 8-μm build-up layers were coated and patterned by lithography to electroplate Cu interconnections with a density of approximately 10% of the surface area. Subsequent to die attachment, molding compound was applied on top to form a 200-μm protective overcoat. The reconstituted wafer was then separated from the glass carrier through a laser ablation process using a 308-nm laser to complete the design of experiments (DOE). An experiment to study the correlation of glass carrier, laser release layer, build-up layers, and molding compound in RDL-first FOWLP processes is discussed to address full process integration on 300-mm glass substrates. The combination of glass carrier, laser release layer, build-up layer, and molding compound will pave the way for realizing cost-effective RDL-first FOWLP on panel-size substrates.

Investigation of Dual Electrical Paths for Off-Chip Compliant Interconnects

2013 ◽  
Vol 135 (3) ◽  
Author(s):  
Raphael Okereke ◽  
Karan Kacker ◽  
Suresh K. Sitaraman
Keyword(s):  
Cost Effective ◽  
Wafer Level ◽  
Mechanical Compliance ◽  
Interconnect Design ◽  
Compliant Interconnect ◽  
Thermomechanical Reliability ◽  
Interconnect Technology ◽  
Low K ◽  
Level Process

This paper presents a study on a dual-path compliant interconnect design which attempts to improve the balance between mechanical compliance and electrical parasitics by using multiple electrical paths in place of a single electrical path. The high compliance of the parallel-path compliant interconnect structure will ensure the reliability of low-K dies. Implementation of this interconnect technology can be cost effective by using a wafer-level process and by eliminating the underfill process. Although an underfill is not required for thermomechanical reliability purposes, an underfill may be used for reducing contamination and oxidation of the interconnects and also to provide additional rigidity against mechanical loads. Therefore, this paper also examines the role of an underfill on the thermomechanical reliability of a dual-path compliant interconnect.

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