scholarly journals Low-Voltage Integrated Circuits Design and Application

Electronics ◽  
2021 ◽  
Vol 10 (1) ◽  
pp. 89
Author(s):  
Anna Richelli
Keyword(s):  
Integrated Circuits ◽  
Low Voltage ◽  
Supply Voltage ◽  
Challenging Tasks ◽  
Low Supply Voltage ◽  
Design And Application

One of the most challenging tasks for analog and digital designers is to maintain the circuit performances by developing novel circuit structures, robust, reliable, and capable of operating with low supply voltage [...]

An Ultra-Low-Voltage Low-Power Current-Mode True RMS-to-DC Converter

2016 ◽  
Vol 25 (06) ◽  
pp. 1650066 ◽  
Author(s):  
Pantre Kompitaya ◽  
Khanittha Kaewdang
Keyword(s):  
Integrated Circuits ◽  
Low Power ◽  
High Performance ◽  
Dynamic Range ◽  
Low Voltage ◽  
Supply Voltage ◽  
Circuit Complexity ◽  
Current Mode ◽  
Cmos Technology ◽  
Low Supply Voltage

A current-mode CMOS true RMS-to-DC (RMS: root-mean-square) converter with very low voltage and low power is proposed in this paper. The design techniques are based on the implicit computation and translinear principle by using CMOS transistors that operate in the weak inversion region. The circuit can operate for two-quadrant input current with wide input dynamic range (0.4–500[Formula: see text]nA) with an error of less than 1%. Furthermore, its features are very low supply voltage (0.8[Formula: see text]V), very low power consumption ([Formula: see text]0.2[Formula: see text]nW) and low circuit complexity that is suitable for integrated circuits (ICs). The proposed circuit is designed using standard 0.18[Formula: see text][Formula: see text]m CMOS technology and the HSPICE simulation results show the high performance of the circuit and confirm the validity of the proposed design technique.

Passive Components for RF-ICs

2012 ◽  
pp. 189-214
Author(s):  
Gianluca Cornetta ◽  
David J. Santos ◽  
José Manuel Vázquez
Keyword(s):  
Integrated Circuits ◽  
Quality Factor ◽  
Silicon Substrate ◽  
Supply Voltage ◽  
Magnetic Behavior ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Fully Integrated ◽  
Core Elements ◽  
Low Supply Voltage

The modern wireless communication industry is demanding transceivers with a high integration level operating in the gigahertz frequency range. This, in turn, has prompted intense research in the area of monolithic passive devices. Modern fabrication processes now provide the capability to integrate onto a silicon substrate inductors and capacitors, enabling a broad range of new applications. Inductors and capacitors are the core elements of many circuits, including low-noise amplifiers, power amplifiers, baluns, mixers, and oscillators, as well as fully-integrated matching networks. While the behavior and the modeling of integrated capacitors are well understood, the design of an integrated inductor is still a challenging task since its magnetic behavior is hard to predict accurately. As the operating frequency approaches the gigahertz range, device nonlinearities, coupling effects, and skin effect dominate, making difficult the design of critical parameters such as the self-resonant frequency, the quality factor, and self and mutual inductances. However, despite the parasitic effects and the low quality-factor, integrated inductors still allow for the implementation of integrated circuits with improved performances under low supply voltage. In this chapter, the authors review the technology behind monolithic capacitors and inductors on silicon substrate for high-frequency applications, with major emphasis on physical implementation and modeling.

A New Low Voltage Analog Circuit Model for Hodgkin–Huxley Neuron Employing FGMOS Transistors

2018 ◽  
Vol 27 (09) ◽  
pp. 1850141
Author(s):  
Ava Salmanpour ◽  
Ebrahim Farshidi ◽  
Karim Ansari Asl
Keyword(s):  
Analog Circuit ◽  
Low Voltage ◽  
Supply Voltage ◽  
Circuit Complexity ◽  
Circuit Model ◽  
Weak Inversion ◽  
Combined Action ◽  
Low Costs ◽  
Low Supply Voltage ◽  
Channel Currents

A low voltage analog VLSI circuit model for Hodgkin–Huxley (HH) neuron cell equations (HH neuron model) is presented. Floating gate MOSFET (FGMOS) transistors in weak inversion region have been used to model HH equations such as gating variables, [Formula: see text] and [Formula: see text] functions and combined action of [Formula: see text], [Formula: see text] and [Formula: see text]. The combination of [Formula: see text], [Formula: see text] and [Formula: see text] controls the Na[Formula: see text] and K[Formula: see text] channel currents. The superiorities of the proposed circuits are low supply voltage, low power consumption, less circuit complexity and as a result, low costs are compared to the previous works. The proposed circuit which uses 24 transistors is simulated in Hspice software using 0.18[Formula: see text] technology and consumes 119[Formula: see text][Formula: see text]W.

A 4H-SiC Bipolar Technology for High-Temperature Integrated Circuits

2013 ◽  
Vol 10 (4) ◽  
pp. 155-162 ◽  
Author(s):  
L. Lanni ◽  
B. G. Malm ◽  
C.-M. Zetterling ◽  
M. Östling
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Low Voltage ◽  
Supply Voltage ◽  
Bipolar Transistors ◽  
Digital Integrated Circuits ◽  
Successful Operation ◽  
Bipolar Technology ◽  
Propagation Delays ◽  
Interconnect Systems

A 4H-SiC bipolar technology suitable for high-temperature integrated circuits is tested with two interconnect systems based on aluminum and platinum. Successful operation of low-voltage bipolar transistors and digital integrated circuits based on emitter coupled logic (ECL) is reported from 27°C up to 500°C for both the metallization systems. When operated on −15 V supply voltage, aluminum and platinum interconnect OR-NOR gates showed stable noise margins of about 1 V and asymmetric propagation delays of about 200 and 700 ns in the whole temperature range for both OR and NOR output. The performance of aluminum and platinum interconnects was evaluated by performing accelerated electromigration tests at 300°C with current density of about 1 MA/cm2 on contact chains consisting of 10 integrated resistors. Although in both cases the contact chains failed after less than one hour, different failure mechanisms were observed for the two metallization systems: electromigration for the aluminum system and poor step coverage and via filling for the platinum system.

scholarly journals A design of low voltage OPAMP using split-length transistors

2014 ◽  
Vol 17 (1) ◽  
pp. 62-70
Author(s):  
Khanh Trung Le ◽  
Tu Trong Bui ◽  
Hung Duc Le ◽  
Kha Cong Pham
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Feedback Systems ◽  
Advanced Technique ◽  
Low Voltage Operation ◽  
Feedback Compensation ◽  
Indirect Feedback ◽  
Low Supply Voltage

In the paper, we present a design of a low voltage Operation Amplifier (OPAMP) circuit using split-length transistors. Indirect feedback compensation is an advanced technique used to stabilize the operation of an OPAMP. Cascode transistors are usually implemented for indirect feedback systems. However, these transistors are not suitable for low voltage design. In this study, we have taken advantage of split-length transistors and indirect feedback compensation technique to design a high performance OPAMP. As a result, the OPAMP operates not only at low supply voltage but also at high frequency. The OPAMP has been designed and fabricated in a 0.18um CMOS technology. This OPAMP achieves 100 dB gain, 90 MHz unity gain frequency and 60 degrees phase margin at 2 V supply voltage.

A Superconducting Nanowire Single-Photon Detector (SnSPD) System for Ultra Low Voltage Time-Resolved Emission (TRE) Measurements of VLSI Circuits

2013 ◽  
Author(s):  
Franco Stellari ◽  
Alan J. Weger ◽  
Seongwon Kim ◽  
Dzmitry Maliuk ◽  
Peilin Song ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Low Voltage ◽  
Supply Voltage ◽  
Single Photon ◽  
Vlsi Circuits ◽  
Photon Detector ◽  
Single Photon Detector ◽  
Time Resolved ◽  
Superconducting Nanowire ◽  
Emission Light

Abstract In this paper, we present a Superconducting Nanowire Single Photon Detector (SnSPD) system and its application to ultra low voltage Time-Resolved Emission (TRE) measurements (also known as Picosecond Imaging Circuit Analysis, PICA) of scaled VLSI circuits. The 9 µm-diameter detector is housed in a closed loop cryostat and fiber coupled to an existing Emiscope III tool for collecting spontaneous emission light from the backside of integrated circuits (ICs) down to a world record 0.5 V supply voltage in a few minutes.

130 nm CMOS Bulk-Driven Variable Gain Amplifier for Low-Voltage Applications

2017 ◽  
Vol 26 (08) ◽  
pp. 1740003 ◽  
Author(s):  
Daniel Arbet ◽  
Viera Stopjaková ◽  
Martin Kováč ◽  
Lukáš Nagy ◽  
Matej Rakús ◽  
...  
Keyword(s):  
Low Voltage ◽  
Supply Voltage ◽  
Input Voltage ◽  
Cmos Technology ◽  
Variable Gain Amplifier ◽  
Voltage Range ◽  
Variable Gain ◽  
Wide Scale ◽  
Simulation Results ◽  
Low Supply Voltage

In this paper, a variable gain amplifier (VGA) designed in 130 nm CMOS technology is presented. The proposed amplifier is based on the bulk-driven (BD) design approach, which brings a possibility to operate with low supply voltage. Since the supply voltage of only 0.6 V is used for the amplifier to operate, there is no risk of latch-up event that usually represents the main drawback of the BD circuit systems. BD transistors are employed in the input differential stage, which makes it possible to operate in rail-to-rail input voltage range. Achieved simulation results indicate that gain of the proposed VGA can be varied in a wide scale, which together with the low supply voltage feature make the proposed amplifier useful for low-voltage and low-power applications. An additional circuit responsible for maintaining the linear-in-decibel gain dependency of the VGA is also addressed. The proposed circuit block avails arbitrary shaping of the curve characterizing the gain versus the controlling voltage dependency.

LOW VOLTAGE, LOW POWER CHEBYSHEV FILTER IN 0.18 μm CMOS TECHNOLOGY

2013 ◽  
Vol 22 (07) ◽  
pp. 1350053 ◽  
Author(s):  
S. REKHA ◽  
T. LAXMINIDHI
Keyword(s):  
Low Power ◽  
Dynamic Range ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Transconductance Amplifier ◽  
Low Pass ◽  
Unity Gain ◽  
Design Centering ◽  
Low Supply Voltage

This paper presents an active-RC continuous time filter in 0.18 μm standard CMOS technology intended to operate on a very low supply voltage of 0.5 V. The filter designed, has a 5th order Chebyshev low pass response with a bandwidth of 477 kHz and 1-dB passband ripple. A low-power operational transconductance amplifier (OTA) is designed which makes the filter realizable. The OTA uses bulk-driven input transistors and feed-forward compensation in order to increase the Dynamic Range and Unity Gain Bandwidth, respectively. The paper also presents an equivalent circuit of the OTA and explains how the filter can be modeled using descriptor state-space equations which will be used for design centering the filter in the presence of parasitics. The designed filter offers a dynamic range of 51.3 dB while consuming a power of 237 μW.

scholarly journals Design techniques for low-voltage analog integrated circuits

2017 ◽  
Vol 68 (4) ◽  
pp. 245-255 ◽  
Author(s):  
Matej Rakús ◽  
Viera Stopjaková ◽  
Daniel Arbet
Keyword(s):  
Integrated Circuits ◽  
Low Voltage ◽  
Supply Voltage ◽  
Building Blocks ◽  
Cmos Process ◽  
Mos Transistors ◽  
Power Supply Voltage ◽  
Current Mirrors ◽  
Moderate Inversion ◽  
Design Techniques

AbstractIn this paper, a review and analysis of different design techniques for (ultra) low-voltage integrated circuits (IC) are performed. This analysis shows that the most suitable design methods for low-voltage analog IC design in a standard CMOS process include techniques using bulk-driven MOS transistors, dynamic threshold MOS transistors and MOS transistors operating in weak or moderate inversion regions. The main advantage of such techniques is that there is no need for any modification of standard CMOS structure or process. Basic circuit building blocks like differential amplifiers or current mirrors designed using these approaches are able to operate with the power supply voltage of 600 mV (or even lower), which is the key feature towards integrated systems for modern portable applications.

scholarly journals Low Voltage Floating Gate MOS Transistor Based Differential Voltage Squarer

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Maneesha Gupta ◽  
Richa Srivastava ◽  
Urvashi Singh
Keyword(s):  
Low Voltage ◽  
Supply Voltage ◽  
Order Effect ◽  
Floating Gate ◽  
Current Output ◽  
Mos Transistor ◽  
Differential Voltage ◽  
Saturation Region ◽  
Linear Differential ◽  
Low Supply Voltage

This paper presents novel floating gate MOSFET (FGMOS) based differential voltage squarer using FGMOS characteristics in saturation region. The proposed squarer is constructed by a simple FGMOS based squarer and linear differential voltage attenuator. The squarer part of the proposed circuit uses one of the inputs of two-input FGMOS transistor for threshold voltage cancellation so as to implement a perfect squarer function, and the differential voltage attenuator part acts as input stage so as to generate the differential signals. The proposed circuit provides a current output proportional to the square of the difference of two input voltages. The second order effect caused by parasitic capacitance and mobility degradation is discussed. The circuit has advantages such as low supply voltage, low power consumption, and low transistor count. Performance of the circuit is verified at ±0.75 V in TSMC 0.18 μm CMOS, BSIM3, and Level 49 technology by using Cadence Spectre simulator.

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