Stress Impact of the Annealing Procedure of Cu-Filled TSV Packaging on the Performance of Nano-Scaled MOSFETs Evaluated by an Analytical Solution and FEA-Based Submodeling Technique

Stress-induced performance change in electron packaging architecture is a major concern when the keep-out zone (KOZ) and corresponding integration density of interconnect systems and transistor devices are considered. In this study, a finite element analysis (FEA)-based submodeling approach is demonstrated to analyze the stress-affected zone of through-silicon via (TSV) and its influences on a planar metal oxide semiconductor field transistor (MOSFET) device. The feasibility of the widely adopted analytical solution for TSV stress-affected zone estimation, Lamé radial stress solution, is investigated and compared with the FEA-based submodeling approach. Analytic results reveal that the Lamé stress solution overestimates the TSV-induced stress in the concerned device by over 50%, and the difference in the estimated results of device performance between Lamé stress solution and FEA simulation can reach 22%. Moreover, a silicon–germanium-based lattice mismatch stressor is designed in a silicon p-type MOSFET, and its effects are analyzed and compared with those of TSV residual stress. The S/D stressor dominates the stress status of the device channel. The demonstrated FEA-based submodeling approach is effective in analyzing the stress impact from packaging and device-level components and estimating the KOZ issue in advanced electronic packaging.

High-efficiency and high-speed germanium photodetector enabled by multiresonant photonic crystal

High-efficiency and high-speed photodetectors with broadband responses are playing pivotal roles for wavelength-division multiplexing optical communications. Germanium photodetectors on silicon platforms exhibit potential cost advantage due to the compatibility for monolithic integration with silicon-based electronic circuits for signal amplification and processing. In this article, we report a normal incidence, germanium photodetector enabled by guided-mode resonances in photonic crystal, which successfully resolved the compromise between quantum efficiency, wavelength coverage and bandwidth requirement, a drawback usually faced by conventional photodetectors operating at normal incidence. The resonant photonic crystal structure is designed to support multiple resonances in the target wavelength range. With an intrinsic absorption layer thickness of 350 nm, the device achieved a high external quantum efficiency of 50% at 1550 nm, along with an enhancement around 300% for the entire C-band. Using a mesa diameter of 14 μm, the fabricated device exhibited a 3-dB bandwidth of 33 GHz and obtained clear eye diagrams at bit rate up to 56 Gbps. This work provides a promising method to design high-efficiency, high-speed, normal incidence germanium photodetectors for optical interconnect systems.