scholarly journals Hysteresis Reduction for Organic Thin Film Transistors with Multiple Stacked Functional Zirconia Polymeric Films

Crystals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 634 ◽  
Author(s):  
Kwon ◽  
Choi ◽  
Bae ◽  
Park
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistor ◽  
Charge Trapping ◽  
Polymeric Films ◽  
Gate Insulator ◽  
Organic Thin Film ◽  
Threshold Voltage Shift ◽  
Gate Insulators ◽  
Temperature Solution

We show that transfer hysteresis for a pentacene thin film transistor (TFT) with a low-temperature solution-processed zirconia (ZrOx) gate insulator can be remarkably reduced by modifying the ZrOx surface with a thin layer of crosslinked poly(4-vinylphenol) (c-PVP). Pentacene TFTs with bare ZrOx and c-PVP stacked ZrOx gate insulators were fabricated, and their hysteresis behaviors compared. The different gate insulators exhibited no significant surface morphology or capacitance differences. The threshold voltage shift magnitude decreased by approximately 71% for the TFT with the c-PVP stacked ZrOx gate insulator compared with the bare ZrOx gate insulator, with 0.75 ± 0.05 and 0.22 ± 0.03 V threshold voltage shifts for the bare ZrOx and c-PVP stacked ZrOx gate insulators, respectively. The hysteresis reduction was attributed to effectively covering hysteresis-inducing charge trapping sites on ZrOx surfaces.

60Co Gamma–Ray Irradiation Effects on Pentacene-Based Organic Thin-Film Transistors

2011 ◽  
Vol 687 ◽  
pp. 576-579 ◽  
Author(s):  
Li Cai ◽  
Toshio Hirao ◽  
Hiroaki Yano ◽  
Zong Fan Duan ◽  
Hideharu Takayanagi ◽  
...  
Keyword(s):  
Thin Film ◽  
Total Dose ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Radiation Effects ◽  
Rebound Effect ◽  
Charge Trapping ◽  
Organic Thin Film Transistors ◽  
Gate Insulator ◽  
Organic Thin Film

Electrical characterization of 60Co γ-ray radiation effects on pentacene-based organic thin-film-transistors having two kinds of gate insulator have been carried out. For transistors with SiO2 gate insulator, the threshold voltage shifts are consistent with positive charge trapping in the oxide and a “rebound” effect is observed. This “rebound” effect is attributed to the negatively charged interface traps generated during irradiation. For polyimide gate insulator, the threshold voltage continually decreases with an increasing total-dose. At total-dose of 1200 Gy (Si), for the SiO2 gate insulator, the field-effect mobility decreased by almost 80%, and for polyimide gate insulator, it decreased by 40%.

MODELING OF TRAPPING INDUCED THRESHOLD VOLTAGE SHIFT DEPENDENCY ON A TIME-VARYING GATE BIAS IN THIN-FILM TRANSISTORS

2012 ◽  
Vol 26 (23) ◽  
pp. 1250153
Author(s):  
TAEHO JUNG
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Discrete Model ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Charge Trapping ◽  
Time Varying ◽  
Threshold Voltage Shift ◽  
Exponential Time ◽  
Discrete States

The author has developed a discrete model for simulation to calculate the threshold voltage (VT) shift caused by charge trapping and detrapping in a thin film transistor (TFT) under a time-varying bias. The model divides continuous states into discrete states and simplifies tunneling among the discrete states to keep track of their occupancies. The simulation is carried out for a TFT that has traps in the gate dielectric uniformly distributed perpendicular to the semiconductor/dielectric interface and the results account for the stretched-exponential time dependence of VT shift.

Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress

2011 ◽  
Vol 99 (6) ◽  
pp. 062108 ◽  
Author(s):  
Bosul Kim ◽  
Eugene Chong ◽  
Do Hyung Kim ◽  
Yong Woo Jeon ◽  
Dae Hwan Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistor ◽  
Trap Density ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Induced Stress ◽  
Amorphous Ingazno

scholarly journals Negative threshold voltage shift in an a-IGZO thin film transistor under X-ray irradiation

RSC Advances ◽  
2019 ◽  
Vol 9 (36) ◽  
pp. 20865-20870 ◽  
Author(s):  
Dong-Gyu Kim ◽  
Jong-Un Kim ◽  
Jun-Sun Lee ◽  
Kwon-Shik Park ◽  
Youn-Gyoung Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistor ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Hydrogen Incorporation ◽  
X Ray ◽  
Spectroscopic Analyses ◽  
Bottom Gate ◽  
Igzo Tft

We studied the effect of X-ray irradiation on the negative threshold voltage shift of bottom-gate a-IGZO TFT. Based on spectroscopic analyses, we found that this behavior was caused by hydrogen incorporation and oxygen vacancy ionization.

Investigation on the Electrical Stability of 5,11-Bis(triethylsilylethynyl)anthradithiophene Thin-Film Transistors

2021 ◽  
Vol 21 (3) ◽  
pp. 1754-1760
Author(s):  
Joel Ndikumana ◽  
Jyothi Chintalapalli ◽  
Jin-Hyuk Kwon ◽  
Jin-Hyuk Bae ◽  
Jaehoon Park
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Ambient Air ◽  
Gate Insulator ◽  
Hydroxyl Groups ◽  
Electrical Stability ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Domain Boundaries

We investigate the effects of environmental conditions on the electrical stability of spin-coated 5,11-bis(triethylsilylethynyl)anthradithiophene (TES-ADT) thin-film transistors (TFTs) in which crosslinked poly(4-vinylphenol-co-methyl methacrylate) (PVP-co-PMMA) was utilized as a gate insulator layer. Atomic force microscopy observations show molecular terraces with domain boundaries in the spin-coated TEST-ADT semiconductor film. The TFT performance was observed to be superior in the ambient air condition. Under negative gate-bias stress, the TES-ADT TFTs showed a positive threshold voltage shift in ambient air and a negative threshold voltage shift under vacuum. These results are explained through a chemical reaction between water molecules in air and unsubstituted hydroxyl groups in the cross-linked PVP-co-PMMA as well as a charge-trapping phenomenon at the domain boundaries in the spin-coated TES-ADT semiconductor.

scholarly journals Remarkable Stability Improvement of ZnO TFT with Al2O3 Gate Insulator by Yttrium Passivation with Spray Pyrolysis

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 976 ◽  
Author(s):  
Jewel Kumer Saha ◽  
Ravindra Naik Bukke ◽  
Narendra Naik Mude ◽  
Jin Jang
Keyword(s):  
Spray Pyrolysis ◽  
Threshold Voltage ◽  
Moisture Absorption ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Zno Films ◽  
Threshold Voltage Shift ◽  
Bias Temperature Stress ◽  
The Stability ◽  
The Impact

We report the impact of yttrium oxide (YOx) passivation on the zinc oxide (ZnO) thin film transistor (TFT) based on Al2O3 gate insulator (GI). The YOx and ZnO films are both deposited by spray pyrolysis at 400 and 350 °C, respectively. The YOx passivated ZnO TFT exhibits high device performance of field effect mobility (μFE) of 35.36 cm2/Vs, threshold voltage (VTH) of 0.49 V and subthreshold swing (SS) of 128.4 mV/dec. The ZnO TFT also exhibits excellent device stabilities, such as negligible threshold voltage shift (∆VTH) of 0.15 V under positive bias temperature stress and zero hysteresis voltage (VH) of ~0 V. YOx protects the channel layer from moisture absorption. On the other hand, the unpassivated ZnO TFT with Al2O3 GI showed inferior bias stability with a high SS when compared to the passivated one. It is found by XPS that Y diffuses into the GI interface, which can reduce the interfacial defects and eliminate the hysteresis of the transfer curve. The improvement of the stability is mainly due to the diffusion of Y into ZnO as well as the ZnO/Al2O3 interface.

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