Influence of H2O and O2 on threshold voltage shift in organic thin-film transistors: Deprotonation of SiOH on SiO2 gate-insulator surface

2008 ◽  
Vol 92 (9) ◽  
pp. 093309 ◽  
Author(s):  
Daisuke Kumaki ◽  
Tokiyoshi Umeda ◽  
Shizuo Tokito
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Gate Insulator ◽  
Organic Thin Film ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Insulator Surface

Investigation on the Electrical Stability of 5,11-Bis(triethylsilylethynyl)anthradithiophene Thin-Film Transistors

2021 ◽  
Vol 21 (3) ◽  
pp. 1754-1760
Author(s):  
Joel Ndikumana ◽  
Jyothi Chintalapalli ◽  
Jin-Hyuk Kwon ◽  
Jin-Hyuk Bae ◽  
Jaehoon Park
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Ambient Air ◽  
Gate Insulator ◽  
Hydroxyl Groups ◽  
Electrical Stability ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Domain Boundaries

We investigate the effects of environmental conditions on the electrical stability of spin-coated 5,11-bis(triethylsilylethynyl)anthradithiophene (TES-ADT) thin-film transistors (TFTs) in which crosslinked poly(4-vinylphenol-co-methyl methacrylate) (PVP-co-PMMA) was utilized as a gate insulator layer. Atomic force microscopy observations show molecular terraces with domain boundaries in the spin-coated TEST-ADT semiconductor film. The TFT performance was observed to be superior in the ambient air condition. Under negative gate-bias stress, the TES-ADT TFTs showed a positive threshold voltage shift in ambient air and a negative threshold voltage shift under vacuum. These results are explained through a chemical reaction between water molecules in air and unsubstituted hydroxyl groups in the cross-linked PVP-co-PMMA as well as a charge-trapping phenomenon at the domain boundaries in the spin-coated TES-ADT semiconductor.

60Co Gamma–Ray Irradiation Effects on Pentacene-Based Organic Thin-Film Transistors

2011 ◽  
Vol 687 ◽  
pp. 576-579 ◽  
Author(s):  
Li Cai ◽  
Toshio Hirao ◽  
Hiroaki Yano ◽  
Zong Fan Duan ◽  
Hideharu Takayanagi ◽  
...  
Keyword(s):  
Thin Film ◽  
Total Dose ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Radiation Effects ◽  
Rebound Effect ◽  
Charge Trapping ◽  
Organic Thin Film Transistors ◽  
Gate Insulator ◽  
Organic Thin Film

Electrical characterization of 60Co γ-ray radiation effects on pentacene-based organic thin-film-transistors having two kinds of gate insulator have been carried out. For transistors with SiO2 gate insulator, the threshold voltage shifts are consistent with positive charge trapping in the oxide and a “rebound” effect is observed. This “rebound” effect is attributed to the negatively charged interface traps generated during irradiation. For polyimide gate insulator, the threshold voltage continually decreases with an increasing total-dose. At total-dose of 1200 Gy (Si), for the SiO2 gate insulator, the field-effect mobility decreased by almost 80%, and for polyimide gate insulator, it decreased by 40%.

Nanoscale Measurements of Electronic Properties in Organic Thin Film Transistors

2005 ◽  
Vol 871 ◽  
Author(s):  
Oren Tal ◽  
Yossi Rosenwaks ◽  
Yohai Roichman ◽  
Nir Tessler ◽  
Calvin K. Chan ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Direct Detection ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Kelvin Probe ◽  
Threshold Voltage Shift ◽  
Effective Threshold ◽  
Nanoscale Measurements

AbstractKelvin probe force microscopy was used for extraction of the threshold and the pinch off voltages in organic thin film transistors. The first was determined by direct detection of the charge accumulation onset and the latter by a direct observation of the pinch off region formation. In addition, an effective threshold voltage shift can be extracted from the pinch-off voltage as a function of charge concentration. The dependence of the effective threshold voltage on the gate voltage must be considered when calculating charge carrier concentrations in organic thin film transistors.

Cyanophenoxy-Substituted Silicon Phthalocyanines for Low Threshold Voltage n-Type Organic Thin-Film Transistors

2021 ◽  
Author(s):  
Benjamin King ◽  
Andrew J. Daszczynski ◽  
Nicole A. Rice ◽  
Alexander J. Peltekoff ◽  
Nathan J. Yutronkie ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Silicon Phthalocyanines ◽  
Low Threshold

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

Sign in / Sign up

Export Citation Format

Share Document