Low-voltage pentacene thin-film transistors with Ta2O5 gate insulators and their reversible light-induced threshold voltage shift

2005 ◽  
Vol 86 (13) ◽  
pp. 132101 ◽  
Author(s):  
Yan Liang ◽  
Guifang Dong ◽  
Yan Hu ◽  
Liduo Wang ◽  
Yong Qiu
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Gate Insulators

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

Investigation on the Electrical Stability of 5,11-Bis(triethylsilylethynyl)anthradithiophene Thin-Film Transistors

2021 ◽  
Vol 21 (3) ◽  
pp. 1754-1760
Author(s):  
Joel Ndikumana ◽  
Jyothi Chintalapalli ◽  
Jin-Hyuk Kwon ◽  
Jin-Hyuk Bae ◽  
Jaehoon Park
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Ambient Air ◽  
Gate Insulator ◽  
Hydroxyl Groups ◽  
Electrical Stability ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Domain Boundaries

We investigate the effects of environmental conditions on the electrical stability of spin-coated 5,11-bis(triethylsilylethynyl)anthradithiophene (TES-ADT) thin-film transistors (TFTs) in which crosslinked poly(4-vinylphenol-co-methyl methacrylate) (PVP-co-PMMA) was utilized as a gate insulator layer. Atomic force microscopy observations show molecular terraces with domain boundaries in the spin-coated TEST-ADT semiconductor film. The TFT performance was observed to be superior in the ambient air condition. Under negative gate-bias stress, the TES-ADT TFTs showed a positive threshold voltage shift in ambient air and a negative threshold voltage shift under vacuum. These results are explained through a chemical reaction between water molecules in air and unsubstituted hydroxyl groups in the cross-linked PVP-co-PMMA as well as a charge-trapping phenomenon at the domain boundaries in the spin-coated TES-ADT semiconductor.

Threshold voltage shift under electrical stress in amorphous, polymorphous, and microcrystalline silicon bottom gate thin-film transistors

2009 ◽  
Vol 207 (5) ◽  
pp. 1245-1248 ◽  
Author(s):  
Maher Oudwan ◽  
Oumkelthoum Moustapha ◽  
Alexey Abramov ◽  
Dmitriy Daineka ◽  
Yvan Bonnassieux ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Microcrystalline Silicon ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Electrical Stress ◽  
Bottom Gate

Threshold Voltage Shift of Amorphous Silicon Thin-Film Transistors During Pulse Operation

1991 ◽  
Vol 30 (Part 1, No. 12B) ◽  
pp. 3719-3723 ◽  
Author(s):  
Ryoji Oritsuki ◽  
Toshikazu Horii ◽  
Akira Sasano ◽  
Ken Tsutsui ◽  
Toshiko Koizumi ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Silicon Thin Film ◽  
Pulse Operation ◽  
Threshold Voltage Shift ◽  
Voltage Shift

Threshold Voltage Shift Variation of a-Si:H TFTs With Anneal Time

2010 ◽  
Vol 1245 ◽  
Author(s):  
Anil Indluru ◽  
Sameer M Venugopal ◽  
David R Allee ◽  
Terry L Alford
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Liquid Crystal Display ◽  
Electrical Performance ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Active Matrix ◽  
Improved Performance ◽  
Anneal Time

AbstractHydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) are widely used in many areas and the most important application is in active matrix liquid crystal display. However, the instability of the a-Si:H TFTs constrains their usability. These TFTs have been annealed at higher temperatures in hope of improving their electrical performance. But, higher anneal temperatures become a constraint when the TFTs are grown on polymer-based flexible substrates. This study investigates the effect of anneal time on the performance of the a-Si:H TFTs on PEN. Thin-film transistors are annealed at different anneal times (4 h, 24 h, and 48 h) and were stressed under different bias conditions. Sub-threshold slope and the off-current improved with anneal time. Off-current was reduced by two orders of magnitude for 48 hours annealed TFT and sub-threshold slope became steeper with longer annealing. At positive gate-bias-stress (20 V), threshold voltage shift (∆Vt) values are positive and exhibit a power-law time dependence. High temperature measurements indicate that longer annealed TFTs show improved performance and stability compared to unannealed TFTs. This improvement is due to reduction of interface trap density and good a-Si:H/insulator interface quality with anneal time.

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