scholarly journals Negative threshold voltage shift in an a-IGZO thin film transistor under X-ray irradiation

RSC Advances ◽  
2019 ◽  
Vol 9 (36) ◽  
pp. 20865-20870 ◽  
Author(s):  
Dong-Gyu Kim ◽  
Jong-Un Kim ◽  
Jun-Sun Lee ◽  
Kwon-Shik Park ◽  
Youn-Gyoung Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistor ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Hydrogen Incorporation ◽  
X Ray ◽  
Spectroscopic Analyses ◽  
Bottom Gate ◽  
Igzo Tft

We studied the effect of X-ray irradiation on the negative threshold voltage shift of bottom-gate a-IGZO TFT. Based on spectroscopic analyses, we found that this behavior was caused by hydrogen incorporation and oxygen vacancy ionization.

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress

2011 ◽  
Vol 99 (6) ◽  
pp. 062108 ◽  
Author(s):  
Bosul Kim ◽  
Eugene Chong ◽  
Do Hyung Kim ◽  
Yong Woo Jeon ◽  
Dae Hwan Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistor ◽  
Trap Density ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Induced Stress ◽  
Amorphous Ingazno

Threshold voltage shift under electrical stress in amorphous, polymorphous, and microcrystalline silicon bottom gate thin-film transistors

2009 ◽  
Vol 207 (5) ◽  
pp. 1245-1248 ◽  
Author(s):  
Maher Oudwan ◽  
Oumkelthoum Moustapha ◽  
Alexey Abramov ◽  
Dmitriy Daineka ◽  
Yvan Bonnassieux ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Microcrystalline Silicon ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Electrical Stress ◽  
Bottom Gate

Abnormal Behavior of Threshold Voltage Shift in Bias-Stressed a-Si:H Thin Film Transistor under Extremely High Intensity Illumination

2015 ◽  
Vol 7 (28) ◽  
pp. 15442-15446 ◽  
Author(s):  
Sang Youn Han ◽  
Kyung Tea Park ◽  
Cheolkyu Kim ◽  
Sanghyun Jeon ◽  
Sung-Hoon Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
High Intensity ◽  
Thin Film Transistor ◽  
Abnormal Behavior ◽  
Threshold Voltage Shift ◽  
Voltage Shift
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