Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress
Keyword(s):
Keyword(s):
2015 ◽
Vol 72
(3)
◽
pp. 30102
◽
Keyword(s):
2015 ◽
Vol 36
(6)
◽
pp. 579-581
◽
Keyword(s):
2016 ◽
Vol 4
(5)
◽
pp. 353-357
◽
Keyword(s):
2012 ◽
Vol 52
(9-10)
◽
pp. 2215-2219
◽
Keyword(s):
Keyword(s):
Keyword(s):
Keyword(s):
2015 ◽
Vol 7
(28)
◽
pp. 15442-15446
◽
Keyword(s):