Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress

2011 ◽  
Vol 99 (6) ◽  
pp. 062108 ◽  
Author(s):  
Bosul Kim ◽  
Eugene Chong ◽  
Do Hyung Kim ◽  
Yong Woo Jeon ◽  
Dae Hwan Kim ◽  
...  
RSC Advances ◽  
2019 ◽  
Vol 9 (36) ◽  
pp. 20865-20870 ◽  
Author(s):  
Dong-Gyu Kim ◽  
Jong-Un Kim ◽  
Jun-Sun Lee ◽  
Kwon-Shik Park ◽  
Youn-Gyoung Chang ◽  
...  

We studied the effect of X-ray irradiation on the negative threshold voltage shift of bottom-gate a-IGZO TFT. Based on spectroscopic analyses, we found that this behavior was caused by hydrogen incorporation and oxygen vacancy ionization.


2015 ◽  
Vol 36 (6) ◽  
pp. 579-581 ◽  
Author(s):  
Jong In Kim ◽  
In-Tak Cho ◽  
Chan-Yong Jeong ◽  
Daeun Lee ◽  
Hyuck-In Kwon ◽  
...  

2016 ◽  
Vol 4 (5) ◽  
pp. 353-357 ◽  
Author(s):  
Chieh Lo ◽  
Zheng-Lun Feng ◽  
Wei-Lun Huang ◽  
Chee Wee Liu ◽  
Tsang-Long Chen ◽  
...  

2015 ◽  
Vol 7 (28) ◽  
pp. 15442-15446 ◽  
Author(s):  
Sang Youn Han ◽  
Kyung Tea Park ◽  
Cheolkyu Kim ◽  
Sanghyun Jeon ◽  
Sung-Hoon Yang ◽  
...  

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