scholarly journals Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs

2019 ◽  
Vol 9 (11) ◽  
pp. 2373 ◽  
Author(s):  
Chunyan Song ◽  
Xuelin Yang ◽  
Panfeng Ji ◽  
Jun Tang ◽  
Shan Wu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Impact Ionization ◽  
Electron Injection ◽  
Depletion Region ◽  
High Electron ◽  
Si Substrate ◽  
Low Resistivity ◽  
Si Substrates ◽  
Vertical Leakage ◽  
P Type

The role of low-resistivity substrate on vertical leakage current (VLC) of AlGaN/GaN-on-Si epitaxial layers has been investigated. AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on both p-type and n-type Si substrates with low resistivity are applied to analyze the vertical leakage mechanisms. The activation energy (Ea) for p-type case is higher than that for n-type at 0–600 V obtained by temperature-dependent current-voltage measurements. An additional depletion region in the region of 0–400 V forms at the AlN/p-Si interface but not for AlN/n-Si. That depletion region leads to a decrease of electron injection and hence effectively reduces the VLC. While in the region of 400–600 V, the electron injection from p-Si substrate increases quickly compared to n-Si substrate, due to the occurrence of impact ionization in the p-Si substrate depletion region. The comparative results indicate that the doping type of low-resistivity substrate plays a key role for VLC.

Arsenic Diffusion and Segregation Behavior at the Interface of Epitaxial CoSi2 Film and Si Substrate

1993 ◽  
Vol 320 ◽  
Author(s):  
S. L. Hsia ◽  
T. Y. Tan ◽  
P. L. Smith ◽  
G. E. Mcguire
Keyword(s):  
Qualitative Agreement ◽  
Film Formation ◽  
Formation Temperature ◽  
Si Substrate ◽  
Free Surfaces ◽  
Si Substrates ◽  
Segregation Behavior ◽  
P Type ◽  
Physical Reasons ◽  
Source Materials

ABSTRACTArsenic diffusion and segregation properties at the interface of the epitaxial CoSi2 and Si substrate have been studied. Samples have been prepared using Co-Ti bimetallic source materials and two types of (001) Si substrates: n+ (doped by As to ∼2}1019 cm−3) and p. For the n+ Si cases, the lower limit of the CoSi2 film formation temperature is increased by ∼200°C to ∼700°C. SIMS results showed As segregation into Si. For epitaxial CoSi2 film formation at 900°C, the As concentration has increased by a factor of ∼2 within a distance of ∼30nm from the interface, while the incorporated As in the film is ∼30-50 times less than that in Si. For p-type Si substrate cases, the epitaxial CoSi2 film was first grown and followed by As+ implantation (into the film) and drive-in processes. It is observed that As was segregated to the CoSi2-Si interface and diffused into Si. This is in qualitative agreement with our results obtained from the n+ substrate experiments and the results of other authors involving the use of polycrystalline CoSi2 films. In the present cases, all implanted As were conserved at a drive in-temperature of 1000°C for up to 100 s. This is in contrast to the polycrystalline CoSi2 film results which involve a substantial As loss to the film free surfaces. The physical reasons of this difference have been discussed.

Charge and Current Transient Measurements on N-Type Hydrogenated Amorphous Silicon in the Relaxation Regime

1994 ◽  
Vol 336 ◽  
Author(s):  
Uwe W. Paschen ◽  
Daewon Kwon ◽  
J. David Cohen
Keyword(s):  
Thermal Emission ◽  
Depletion Region ◽  
Current Transient ◽  
Relaxation Model ◽  
Si Substrate ◽  
Capacitance Measurements ◽  
Transient Data ◽  
P Type ◽  
Hydrogenated Amorphous ◽  
Transient Measurements

ABSTRACTJunction capacitance measurements were employed to study the thermal emission of electrons after application of a voltage filling pulse on a 80 Vppm PH3 doped a-Si:H sample on p+ c-Si substrate. We show that these data can be explained in terms of the relaxation Model. In addition, the time dependence of the charge flow into the depletion region during the filling pulse is investigated by current transient Measurements. Finally, we present charge transient data for a 9 Vppm a-Si:H sample on n+ c-Si substrate and compare the results to those obtained on samples on p-type substrates.

GaAs/AlGaAs Diode Lasers on Monolithic GaAs/Si Substrates

1986 ◽  
Vol 67 ◽  
Author(s):  
T. H. Windhorn ◽  
G. W. Turner ◽  
G. M. Metze
Keyword(s):  
Active Region ◽  
Diode Lasers ◽  
Si Substrate ◽  
Mole Percent ◽  
Double Heterostructure ◽  
Graded Index ◽  
Si Substrates ◽  
Stripe Width ◽  
Power Outputs ◽  
P Type

ABSTRACTOne approach to the development of optical interconnects between Si systems utilizes diode lasers fabricated in III-V epitaxial layers grown on Si wafers. We have fabricated double-heterostructure lasers in GaAs/AlGaAs layers grown on a Ge-coated Si substrate, and both asymmetric largeoptical- cavity (LOC) lasers and graded-index, separate-confinement heterostructure (GRIN-SCH) lasers in such layers grown directly on a Si substrate. The GaAs/AlGaAs layers were grown by molecular beam epitaxy on (100) p-Si substrates. Si and Be were used as the n- and p-type dopants, respectively. Oxide-defined stripe-geometry devices, 300 μm long, were fabricated using standard AuSn and CrAu metallizations for the n- and ptype contacts, respectively. The laser facets were formed by ion-beamassisted etching. The double-heterostructure devices (8 μm stripe width), in which the active region contained about 10 mole percent AlAs, were evaluated using pulsed bias at 77 K. They produced power outputs up to 3.3 mW per facet and exhibited thresholds as low as 170 mA. The LOC devices (4 μm stripe width), which had a GaAs active region, were characterized using pulsed bias at 300 K. These devices produced power outputs up to 27 mW per facet. The lowest threshold was 775 mA. The GRIN-SCH devices (4 μm stripe width), which incorporated a 70 Å GaAs quantum well active layer, were also characterized using pulsed bias at 300 K. These devices were not operated at power outputs above −5 mW. Their lowest threshold was 220 mA.

scholarly journals Impact Ionization and Hot-Electron Injection Derived Consistently from Boltzmann Transport

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 454-461 ◽  
Author(s):  
Paul Hasler ◽  
Andreas G. Andreou ◽  
Chris Diorio ◽  
Bradley A. Minch ◽  
Carver A. Mead
Keyword(s):  
Distribution Function ◽  
Impact Ionization ◽  
Electron Distribution Function ◽  
Electron Injection ◽  
Quantitative Model ◽  
Depletion Region ◽  
Hot Electron ◽  
Boltzmann Transport ◽  
Hot Electron Injection ◽  
The Impact

We develop a quantitative model of the impact-ionizationand hot-electron–injection processes in MOS devices from first principles. We begin by modeling hot-electron transport in the drain-to-channel depletion region using the spatially varying Boltzmann transport equation, and we analytically find a self consistent distribution function in a two step process. From the electron distribution function, we calculate the probabilities of impact ionization and hot-electron injection as functions of channel current, drain voltage, and floating-gate voltage. We compare our analytical model results to measurements in long-channel devices. The model simultaneously fits both the hot-electron- injection and impact-ionization data. These analytical results yield an energydependent impact-ionization collision rate that is consistent with numerically calculated collision rates reported in the literature.

Effects of Nitridation by N2O or No on the Electrical Properties of Thin Gate or Tunnel Oxides

2000 ◽  
Vol 611 ◽  
Author(s):  
C. Gerardi ◽  
T. Rossetti ◽  
M. Melanotte ◽  
S. Lombardo ◽  
I. Crupi
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Nitrogen Concentration ◽  
Tunneling Current ◽  
Electron Injection ◽  
Silicon Oxynitride ◽  
Si Substrate ◽  
Substrate Interface ◽  
Thin Silicon ◽  
Tunnel Oxides

ABSTRACTWe have studied the effects of nitridation on the leakage current of thin (7-8 nm) gate or tunnel oxides. A polarity dependence of the tunneling current has been found this behavior is related to the presence of a thin silicon oxynitride layer at the SiO2/Si-substrate interface. The oxynitride layer lowers the tunneling current when electrons are injected from the interface where the oxynitride is located (substrate injection). The current flowing across the oxide when electrons are injected from the opposite interface (gate injection) is not influenced by the oxynitride. The increase of nitrogen concentration leads to a decrease of the tunneling current for substrate electron injection.

AC Photovoltaic Inspection of P-N Junctions having High Leakage Current

1989 ◽  
Vol 163 ◽  
Author(s):  
N. Honma ◽  
H. Shimizu ◽  
C. Munakata ◽  
M. Ogasawara
Keyword(s):  
Oxide Layer ◽  
Leakage Current ◽  
Photon Beam ◽  
Si Substrate ◽  
High Leakage Current ◽  
P Type ◽  
Field Oxide ◽  
Positively Charged ◽  
Si Wafer

AbstractA focused photon beam chopped at 2 kHz scans p-n junctions in a p-type Si wafer and ac photovoltages are capacitively measured in order to inspect homogeneities of the junctions. It is found that the ac photovoltages are high not only in the junction areas but also in the field oxide regions around the junctions when the junctions are leaky. This indicates that dense positively charged traps exist at the interface between the heavily boron implanted Si substrate and the field oxide layer around the high leakage junction, and that the traps cause the increase in both the junction leakage current and the ac photovoltage.

Al0.15Ga0.85N∕GaN high electron mobility transistor structures grown on p-type Si substrates

2006 ◽  
Vol 89 (13) ◽  
pp. 132107 ◽  
Author(s):  
C.-T. Liang ◽  
Kuang Yao Chen ◽  
N. C. Chen ◽  
P. H. Chang ◽  
Chin-An Chang
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Si Substrates ◽  
P Type
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