Al0.15Ga0.85N∕GaN high electron mobility transistor structures grown on p-type Si substrates

2006 ◽  
Vol 89 (13) ◽  
pp. 132107 ◽  
Author(s):  
C.-T. Liang ◽  
Kuang Yao Chen ◽  
N. C. Chen ◽  
P. H. Chang ◽  
Chin-An Chang
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Si Substrates ◽  
P Type

Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates

ACS Nano ◽  
2013 ◽  
Vol 7 (10) ◽  
pp. 9106-9114 ◽  
Author(s):  
Kyung-Ho Kim ◽  
Doo-Seung Um ◽  
Hochan Lee ◽  
Seongdong Lim ◽  
Joonyeon Chang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Orbit Interaction ◽  
High Electron ◽  
Spin Orbit ◽  
High Electron Mobility ◽  
Spin Orbit Interaction ◽  
Si Substrates

scholarly journals Electron-electron interactions in Al0.15Ga0.85N∕GaN high electron mobility transistor structures grown on Si substrates

2007 ◽  
Vol 90 (2) ◽  
pp. 022107 ◽  
Author(s):  
C.-T. Liang ◽  
Li-Hung Lin ◽  
J. Z. Huang ◽  
Zhi-Yao Zhang ◽  
Zhe-Hau Sun ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Si Substrates ◽  
Electron Interactions

scholarly journals An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1035
Author(s):  
Hujun Jia ◽  
Xiaowei Wang ◽  
Mengyu Dong ◽  
Shunwei Zhu ◽  
Yintang Yang
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
Major Change ◽  
High Electron Mobility Transistor ◽  
High Energy ◽  
High Electron ◽  
High Electron Mobility ◽  
Power Added Efficiency ◽  
Barrier Surface ◽  
P Type

An improved P-type doped barrier surface AlGaN/GaN high electron mobility transistor with high power-added efficiency (PDBS-HEMT) is proposed in this paper. Through the modelling and simulation of ISE-TCAD and ADS software, the influence of the P-type doped region on the performance parameters is studied, and the power-added efficiency (PAE) obtained and effectively improved is further verified. The drain saturation current and the threshold voltage of PDBS-HEMT has no major change compared with the traditional structure; the peak transconductance decreases slightly, but the breakdown voltage is significantly enhanced. Furthermore, the gate-source capacitance and gate-drain capacitance are reduced by 14.6% and 14.3%, respectively. By simulating the RF output characteristics of the device, the maximum oscillation frequency of the proposed structure is increased from 57 GHz to 63 GHz, and the saturated output power density is 10.9 W/mm, 9.3 W/mm and 6.4 W/mm at the frequency of 600 MHz, 1200 MHz and 2400 MHz, respectively. The highest PAE of 88.4% was obtained at 1200 MHz. The results show that the PDBS structure has an excellent power and efficiency output capability. Through the design of the P-type doped region, the DC and RF parameters and efficiency of the device are balanced, demonstrating the great potential of PDBS structure in high energy efficiency applications.

A back-gated high electron mobility transistor utilizing a p-type doped layer

1993 ◽  
Vol 8 (8) ◽  
pp. 1596-1598 ◽  
Author(s):  
A C Churchill ◽  
M P Grimshaw ◽  
D A Ritchie ◽  
E H Linfield ◽  
G A C Jones
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
P Type
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