scholarly journals Properties of silicon nitride films deposited by ECR plasma CVD.

Shinku ◽  
1987 ◽  
Vol 30 (3) ◽  
pp. 123-129 ◽  
Author(s):  
Minoru SAWADA ◽  
Daijiro INOUE ◽  
Yasoo HARADA
Keyword(s):  
Silicon Nitride ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Silicon Nitride Films

Ion Beam Analysis of the Concentration and Thermal Release of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD Method

1988 ◽  
Vol 27 (Part 1, No. 8) ◽  
pp. 1406-1410 ◽  
Author(s):  
Takashi Kuroi ◽  
Kenji Umezawa ◽  
Junji Yamane ◽  
Fumiya Shoji ◽  
Kenjiro Oura ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ion Beam ◽  
Plasma Cvd ◽  
Ion Beam Analysis ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Thermal Release ◽  
Silicon Nitride Films ◽  
Beam Analysis

Thermal Stability of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD method

1988 ◽  
Vol 27 (Part 1, No. 4) ◽  
pp. 528-533 ◽  
Author(s):  
Takashi Hirao ◽  
Takeshi Kamada ◽  
Masatoshi Kitagawa ◽  
Kentaro Setsune ◽  
Kiyotaka Wasa ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Silicon Nitride ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Silicon Nitride Films ◽  
Thermal Stability Of

Influence of Deposition Conditions on the Properties of Silicon Nitride Films Prepared by the ECR Plasma CVD Method

1987 ◽  
Vol 26 (Part 1, No. 12) ◽  
pp. 2015-2021 ◽  
Author(s):  
Takashi Hirao ◽  
Kentaro Setsune ◽  
Masatoshi Kitagawa ◽  
Takeshi Kamada ◽  
Kiyotaka Wasa ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Silicon Nitride Films ◽  
Deposition Conditions

Hydrogen Concentration and Bond Configurations in Silicon Nitride Films Prepared by ECR Plasma CVD Method

1988 ◽  
Vol 27 (Part 1, No. 1) ◽  
pp. 30-34 ◽  
Author(s):  
Takashi Hirao ◽  
Kentaro Setsune ◽  
Masatoshi Kitagawa ◽  
Takeshi Kamada ◽  
Kiyotaka Wasa ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Concentration ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Silicon Nitride Films

Low Hydrogen Content Silicon Nitride Films Deposited at Room Temperature with an ECR Plasma Source

2004 ◽  
Vol 151 (10) ◽  
pp. C649 ◽  
Author(s):  
Gratiela I. Isai ◽  
Jisk Holleman ◽  
Hans Wallinga ◽  
Pierre H. Woerlee
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Content ◽  
Room Temperature ◽  
Plasma Source ◽  
Ecr Plasma ◽  
Silicon Nitride Films

Properties of CAT-CVD Silicon Nitride Films and Their Application as Passivation Films

1996 ◽  
Vol 446 ◽  
Author(s):  
Shinya Okada ◽  
Hideki Matsumura
Keyword(s):  
High Temperature ◽  
Silicon Nitride ◽  
Gaseous Mixture ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Plasma Cvd ◽  
New Device ◽  
Silicon Nitride Films ◽  
Chemical Etch ◽  
Substrate Temperatures

AbstractSilicon nitride (SiNx) films have been successfully synthesized by the catalytic chemical vapor deposition (cat-CVD) method using a gaseous mixture of silane (SiH4) and ammonia (NH3). In the method, the deposition gases are decomposed by catalytic cracking reactions with a high temperature (1700°C) catalyzer near the substrates, and SiNx films can be deposited at substrate temperatures lower than 400°C without using plasma or photochemical excitation. Nearly stoichiometric Si3N4 films are formed when the flow ratio of NH3 exceeds over 100 times of that of SiH4. These cat-CVD SiNx films show excellent properties. That is, the resistivity, the breakdown voltage, the chemical etch resistance and hydrogen content in the films are almost equivalent to those of high-temperature thermal CVD films. In addition, the surface diffusion length of depositing species is about several-tens μπι and step-coverage itself is conformai. Thus, the cat-CVD SiNx films are regarded not only as a new device passivation films superior to the conventional plasma-CVD films but as a gate insulator for electon devices due to their high quality.

Silicon Nitride Films with Low Hydrogen Content, Low Stress, Low Damage and Stoichiometric Composition by Photo-Assisted Plasma CVD

1989 ◽  
Vol 28 (Part 2, No. 12) ◽  
pp. L2316-L2319 ◽  
Author(s):  
Nobumasa Suzuki ◽  
Toshiaki Yoshikawa ◽  
Kazuya Masu ◽  
Kazuo Tsubouchi ◽  
Nobuo Mikoshiba
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Content ◽  
Stoichiometric Composition ◽  
Plasma Cvd ◽  
Silicon Nitride Films

Annealing behavior of silicon nitride and silicon oxynitride films prepared by ECR plasma CVD method

1988 ◽  
Vol 33-34 ◽  
pp. 1094-1100 ◽  
Author(s):  
Takeshi Kamada ◽  
Takashi Hirao ◽  
Masatoshi Kitagawa ◽  
Kentaro Setsune ◽  
Kiyotaka Wasa ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxynitride ◽  
Plasma Cvd ◽  
Annealing Behavior ◽  
Ecr Plasma ◽  
Cvd Method

Role of Ions and Radical Species in Silicon Nitride Deposition by ECR Plasma CVD Method

1987 ◽  
Vol 26 (Part 2, No. 5) ◽  
pp. L544-L546 ◽  
Author(s):  
Takashi Hirao ◽  
Kentaro Setsune ◽  
Masatoshi Kitagawa ◽  
Yoshio Manabe ◽  
Kiyotaka Wasa ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Plasma Cvd ◽  
Radical Species ◽  
Ecr Plasma ◽  
Cvd Method

Silicon nitride films by plasma-CVD from SiH4-N2and SiF4-N2-H2gas mixtures

1984 ◽  
Author(s):  
S. Fujita ◽  
Nan-Sheng Zhou ◽  
H. Toyoshima ◽  
T. Ohishi ◽  
A. Sasaki
Keyword(s):  
Silicon Nitride ◽  
Gas Mixtures ◽  
Plasma Cvd ◽  
Silicon Nitride Films
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