Influence of Deposition Conditions on the Properties of Silicon Nitride Films Prepared by the ECR Plasma CVD Method

1987 ◽  
Vol 26 (Part 1, No. 12) ◽  
pp. 2015-2021 ◽  
Author(s):  
Takashi Hirao ◽  
Kentaro Setsune ◽  
Masatoshi Kitagawa ◽  
Takeshi Kamada ◽  
Kiyotaka Wasa ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Silicon Nitride Films ◽  
Deposition Conditions

Ion Beam Analysis of the Concentration and Thermal Release of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD Method

1988 ◽  
Vol 27 (Part 1, No. 8) ◽  
pp. 1406-1410 ◽  
Author(s):  
Takashi Kuroi ◽  
Kenji Umezawa ◽  
Junji Yamane ◽  
Fumiya Shoji ◽  
Kenjiro Oura ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ion Beam ◽  
Plasma Cvd ◽  
Ion Beam Analysis ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Thermal Release ◽  
Silicon Nitride Films ◽  
Beam Analysis

Thermal Stability of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD method

1988 ◽  
Vol 27 (Part 1, No. 4) ◽  
pp. 528-533 ◽  
Author(s):  
Takashi Hirao ◽  
Takeshi Kamada ◽  
Masatoshi Kitagawa ◽  
Kentaro Setsune ◽  
Kiyotaka Wasa ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Silicon Nitride ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Silicon Nitride Films ◽  
Thermal Stability Of

Hydrogen Concentration and Bond Configurations in Silicon Nitride Films Prepared by ECR Plasma CVD Method

1988 ◽  
Vol 27 (Part 1, No. 1) ◽  
pp. 30-34 ◽  
Author(s):  
Takashi Hirao ◽  
Kentaro Setsune ◽  
Masatoshi Kitagawa ◽  
Takeshi Kamada ◽  
Kiyotaka Wasa ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Concentration ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Silicon Nitride Films

Annealing behavior of silicon nitride and silicon oxynitride films prepared by ECR plasma CVD method

1988 ◽  
Vol 33-34 ◽  
pp. 1094-1100 ◽  
Author(s):  
Takeshi Kamada ◽  
Takashi Hirao ◽  
Masatoshi Kitagawa ◽  
Kentaro Setsune ◽  
Kiyotaka Wasa ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxynitride ◽  
Plasma Cvd ◽  
Annealing Behavior ◽  
Ecr Plasma ◽  
Cvd Method

Role of Ions and Radical Species in Silicon Nitride Deposition by ECR Plasma CVD Method

1987 ◽  
Vol 26 (Part 2, No. 5) ◽  
pp. L544-L546 ◽  
Author(s):  
Takashi Hirao ◽  
Kentaro Setsune ◽  
Masatoshi Kitagawa ◽  
Yoshio Manabe ◽  
Kiyotaka Wasa ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Plasma Cvd ◽  
Radical Species ◽  
Ecr Plasma ◽  
Cvd Method

scholarly journals Properties of silicon nitride films deposited by ECR plasma CVD.

Shinku ◽  
1987 ◽  
Vol 30 (3) ◽  
pp. 123-129 ◽  
Author(s):  
Minoru SAWADA ◽  
Daijiro INOUE ◽  
Yasoo HARADA
Keyword(s):  
Silicon Nitride ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Silicon Nitride Films

Towards Stabilized 10% Efficiency of Large-Area (> 5000cm2) a-Si/a-SiGe Tandem Solar Cells using High-Rate Deposition

2001 ◽  
Vol 664 ◽  
Author(s):  
Shingo Okamoto ◽  
Akira Terakawa ◽  
Eiji Maruyama ◽  
Wataru Shinohara ◽  
Makoto Tanaka ◽  
...  
Keyword(s):  
Solar Cells ◽  
Layer Structure ◽  
High Rate ◽  
Plasma Cvd ◽  
Large Area ◽  
Tandem Solar Cells ◽  
Cvd Method ◽  
Hydrogen Dilution ◽  
High Photosensitivity ◽  
Deposition Conditions

ABSTRACTThis paper reviews recent progress in large-area a-Si/a-SiGe tandem solar cells in Sanyo. Much effort has been devoted to increasing both the stabilized efficiency and the process throughput. A key issue in increasing the stabilized efficiency is thinner i-layer structure with an improved optical confinement effect. High-rate deposition of the i-layers has been investigated using rf (13.56MHz) plasma-CVD method while keeping the substrate temperature below 200 °C. A high photosensitivity of 106 of a-Si:H films maintain up to the deposition rate (Rd) of 15 Å/s by optimizing hydrogen dilution and other deposition conditions. It is of great importance to utilize the effect of hydrogen dilution which can reduce the incorporation of excess hydrogen in the films. The world's highest conversion efficiency of 11.2% has been achieved for a large-area (8252cm2) a-Si/a-SiGe tandem by combining the optimized hydrogen dilution and other solar cell related technologies.

Low Hydrogen Content Silicon Nitride Films Deposited at Room Temperature with an ECR Plasma Source

2004 ◽  
Vol 151 (10) ◽  
pp. C649 ◽  
Author(s):  
Gratiela I. Isai ◽  
Jisk Holleman ◽  
Hans Wallinga ◽  
Pierre H. Woerlee
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Content ◽  
Room Temperature ◽  
Plasma Source ◽  
Ecr Plasma ◽  
Silicon Nitride Films
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