Silicon nitride films by plasma-CVD from SiH4-N2and SiF4-N2-H2gas mixtures

1984 ◽  
Author(s):  
S. Fujita ◽  
Nan-Sheng Zhou ◽  
H. Toyoshima ◽  
T. Ohishi ◽  
A. Sasaki
Keyword(s):  
Silicon Nitride ◽  
Gas Mixtures ◽  
Plasma Cvd ◽  
Silicon Nitride Films

Properties of CAT-CVD Silicon Nitride Films and Their Application as Passivation Films

1996 ◽  
Vol 446 ◽  
Author(s):  
Shinya Okada ◽  
Hideki Matsumura
Keyword(s):  
High Temperature ◽  
Silicon Nitride ◽  
Gaseous Mixture ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Plasma Cvd ◽  
New Device ◽  
Silicon Nitride Films ◽  
Chemical Etch ◽  
Substrate Temperatures

AbstractSilicon nitride (SiNx) films have been successfully synthesized by the catalytic chemical vapor deposition (cat-CVD) method using a gaseous mixture of silane (SiH4) and ammonia (NH3). In the method, the deposition gases are decomposed by catalytic cracking reactions with a high temperature (1700°C) catalyzer near the substrates, and SiNx films can be deposited at substrate temperatures lower than 400°C without using plasma or photochemical excitation. Nearly stoichiometric Si3N4 films are formed when the flow ratio of NH3 exceeds over 100 times of that of SiH4. These cat-CVD SiNx films show excellent properties. That is, the resistivity, the breakdown voltage, the chemical etch resistance and hydrogen content in the films are almost equivalent to those of high-temperature thermal CVD films. In addition, the surface diffusion length of depositing species is about several-tens μπι and step-coverage itself is conformai. Thus, the cat-CVD SiNx films are regarded not only as a new device passivation films superior to the conventional plasma-CVD films but as a gate insulator for electon devices due to their high quality.

Silicon Nitride Films with Low Hydrogen Content, Low Stress, Low Damage and Stoichiometric Composition by Photo-Assisted Plasma CVD

1989 ◽  
Vol 28 (Part 2, No. 12) ◽  
pp. L2316-L2319 ◽  
Author(s):  
Nobumasa Suzuki ◽  
Toshiaki Yoshikawa ◽  
Kazuya Masu ◽  
Kazuo Tsubouchi ◽  
Nobuo Mikoshiba
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Content ◽  
Stoichiometric Composition ◽  
Plasma Cvd ◽  
Silicon Nitride Films

Ion Beam Analysis of the Concentration and Thermal Release of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD Method

1988 ◽  
Vol 27 (Part 1, No. 8) ◽  
pp. 1406-1410 ◽  
Author(s):  
Takashi Kuroi ◽  
Kenji Umezawa ◽  
Junji Yamane ◽  
Fumiya Shoji ◽  
Kenjiro Oura ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ion Beam ◽  
Plasma Cvd ◽  
Ion Beam Analysis ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Thermal Release ◽  
Silicon Nitride Films ◽  
Beam Analysis

scholarly journals Properties of silicon nitride films deposited by ECR plasma CVD.

Shinku ◽  
1987 ◽  
Vol 30 (3) ◽  
pp. 123-129 ◽  
Author(s):  
Minoru SAWADA ◽  
Daijiro INOUE ◽  
Yasoo HARADA
Keyword(s):  
Silicon Nitride ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Silicon Nitride Films

Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure

2008 ◽  
Vol 254 (19) ◽  
pp. 6208-6210 ◽  
Author(s):  
M. Matsumoto ◽  
Y. Inayoshi ◽  
M. Suemitsu ◽  
E. Miyamoto ◽  
T. Yara ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Atmospheric Pressure ◽  
Pulsed Plasma ◽  
Plasma Cvd ◽  
Silicon Nitride Films

Thermal Stability of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD method

1988 ◽  
Vol 27 (Part 1, No. 4) ◽  
pp. 528-533 ◽  
Author(s):  
Takashi Hirao ◽  
Takeshi Kamada ◽  
Masatoshi Kitagawa ◽  
Kentaro Setsune ◽  
Kiyotaka Wasa ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Silicon Nitride ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Silicon Nitride Films ◽  
Thermal Stability Of

Deposition and characterization of low temperature silicon nitride films deposited by inductively coupled plasma CVD

2011 ◽  
Vol 257 (11) ◽  
pp. 5052-5058 ◽  
Author(s):  
Abhijeet Kshirsagar ◽  
Pradeep Nyaupane ◽  
Dhananjay Bodas ◽  
S.P. Duttagupta ◽  
S.A. Gangal
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Inductively Coupled Plasma ◽  
Plasma Cvd ◽  
Inductively Coupled ◽  
Silicon Nitride Films

Room temperature deposition of silicon nitride films using very low frequency (50Hz) plasma CVD

1985 ◽  
Vol 14 (5) ◽  
pp. 573-586 ◽  
Author(s):  
M. Shimozuma ◽  
K. Kitamori ◽  
H. Ohno ◽  
H. Hasegawa ◽  
H. Tagashira
Keyword(s):  
Silicon Nitride ◽  
Room Temperature ◽  
Low Frequency ◽  
Plasma Cvd ◽  
Very Low Frequency ◽  
Silicon Nitride Films ◽  
Temperature Deposition

PACVD Fluorinated Silicon Nitride Films Deposited From SiF4/NH3 GAS MIXTURES

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Castro ◽  
M. Gasset ◽  
C. Gomez-Aleixandre ◽  
O. Sanchez ◽  
J. M. Albella
Keyword(s):  
Silicon Nitride ◽  
Low Frequency ◽  
Fluorine Content ◽  
Emission Spectra ◽  
Deposition Process ◽  
Gas Mixtures ◽  
Silicon Nitride Films ◽  
Deposition Parameters ◽  
Wide Range ◽  
Analytical Resolution

ABSTRACTFluorinated silicon nitride films deposited from SiF4/NH3 gas mixtures by PACVD at two different frequencies have been investigated. At 13.56 MHz, low deposition rate was detected and no appreciable changes were observed when the deposition parameters varied in a wide range. On the contrary, higher deposition rates were achieved when a 35 KHz frequency was applied. These low frequency silicon nitride films showed an increase in the fluorine content In their structure when the SiF4 flow ratio in the gas mixture was increased, as detected by analytical resolution of the IR spectra. In addition, analysis of the plasma emission spectra has been performed in order to explain the effect of the plasma frequency in the deposition process.

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