scholarly journals Atomic scale interface structure of In{sub 0.2}Ga{sub 0.8}As/GaAs strained layers studied by cross-sectional scanning tunneling microscopy

1993 ◽  
Author(s):  
J.F. Zheng ◽  
E.R. Weber ◽  
M.B. Salmeron
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Interface Structure ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional ◽  
Strained Layers

Anisotropy in Atomic-Scale Interface Structure and Mobility in Inas/Ga1_Xinxsb Superlattices

1996 ◽  
Vol 448 ◽  
Author(s):  
A. Y. Lew ◽  
S. L. Zuo ◽  
E. T. Yu ◽  
R. H. Miles
Keyword(s):  
Quantitative Analysis ◽  
Molecular Beam ◽  
Interface Structure ◽  
Interface Roughness ◽  
Atomic Scale ◽  
Constant Current ◽  
Scanning Tunneling ◽  
Interfacial Bond ◽  
Tunneling Microscopy ◽  
Cross Sectional

AbstractWe have used cross-sectional scanning tunneling microscopy to study the atomic-scale interface structure of InAs/Ga, _In.xSb superlattices grown by molecular-beam epitaxy. Detailed, quantitative analysis of interface profiles obtained from constant-current images of both (110) and (1ī0) cross-sectional planes of the superlattice indicates that interfaces in the (1ī0) plane exhibit a higher degree of interface roughness than those in the (110) plane, and that the Ga1-xln xAs interfaces are rougher than the InAs-on-Gal1-xInxSb interfaces. The roughness data are consistent with anisotropy in interface structure arising from anisotropic island formation during growth, and in addition with a growth-sequence-dependent interface asymmetry resulting from differences in interfacial bond structure between the superlattice layers. Roughness data are compared with measurements of anisotropy in low-temperature Hall mobilities of the samples.

Atomic‐scale view of AlGaAs/GaAs heterostructures with cross‐sectional scanning tunneling microscopy

1993 ◽  
Vol 63 (9) ◽  
pp. 1273-1275 ◽  
Author(s):  
M. B. Johnson ◽  
U. Maier ◽  
H.‐P. Meier ◽  
H. W. M. Salemink
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional

scholarly journals N−nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy

2020 ◽  
Vol 102 (12) ◽  
Author(s):  
D. Tjeertes ◽  
T. J. F. Verstijnen ◽  
A. Gonzalo ◽  
J. M. Ulloa ◽  
M. S. Sharma ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional

Scanning Tunneling Microscopy Studies of GaAs1-xPx Single Crystals

1995 ◽  
Vol 378 ◽  
Author(s):  
X. Liu ◽  
E. R. Weber ◽  
D. F. Ogletree ◽  
M. Salmeron ◽  
T. Slupinski
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Single Crystals ◽  
Spectroscopic Studies ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional ◽  
Group V ◽  
Imaging Results ◽  
The Difference

AbstractWe report cross-sectional scanning tunneling microscopy studies of GaAsP single crystals grown by the Liquid Encapsulated Czochralski technique. We show that the two group-V elements can be clearly distinguished, which is attributed to the difference in energies of surface dangling bond states of As and P. Our atomic scale imaging results show alloy composition in agreement with spectroscopic studies. They also provide valuable information about atomic scale alloy fluctuations and clustering effects.

Cross-Sectional Scanning Tunneling Microscopy of III-V Semiconductor Structures

1994 ◽  
Vol 332 ◽  
Author(s):  
R. M. Feenstra ◽  
A. Vaterlaus ◽  
J. M. Woodall ◽  
D. A. Collins ◽  
T. C. McGill
Keyword(s):  
Low Temperature ◽  
Scanning Tunneling Microscopy ◽  
Electronic Spectroscopy ◽  
Structural Features ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Layered Semiconductor ◽  
Cross Sectional ◽  
Semiconductor Structures

ABSTRACTThe method of cross-sectional scanning tunneling microscopy (STM) is described. Illustrative examples are given of studies of III-V semiconductor systems, including low-temperature-grown (LT) GaAs, and InAs/GaSb superlattices. In each case, the STM permits the observation of structural features on an atomic scale. The associated electronic spectroscopy for states a few eV on either side of the Fermi-level can be determined. Such information is relevant for the operation of devices constructed from these layered semiconductor systems.

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