Tunable band gap of layered semiconductor Zn3In2S6 under pressure

Band gap is an important property of a semiconductor, and a candidate material with highly tunable band gap under external tuning parameters will offer wider applications in optoelectronic devices and...

Solution-processed and High-performance Ionic-paper Gated Field-effect Transistors from Two-dimensional Layered Semiconductor Nanosheets for High Thermal Resolution

The remarkable properties of layered semiconductor nanosheets (LSNs), such as scalable production, bandgap tunability and mechanical flexibility have promoted them as promising building blocks for nanoelectronics and bioelectronics. However, it...

The process for preparing MX2 (M=Mo,W; X=Se,S) single crystal

The layered semiconductor compound, as transition metal dichalcogenide family MX2 (M=Mo, W, X=S, Se) had stirred common interesting in solar energy conversion for its special photoelectronic properties. The synthesizing of its single crystal free of surface defects is a pressing matter of the moment. In this paper, the key points in preparing such single crystal are concluded, that is high vacuum, long time, and small ΔT, sometimes the transport agents have to be used to help the matter diffusion. And the proper quantities of these parameters are detailed in this paper too.

TUNABLE ELECTRON-SPIN POLARIZATION BY δ-POTENTIAL IN LAYERED SEMICONDUCTOR NANOSTRUCTURE

We theoretically explore how to control electron-spin polarization in layered semiconductor nanostructure (LSN) by a [Formula: see text]-potential realized by atomic-layer doping. Due to Rashba spin-orbit coupling, a considerable spin polarization still remains even through a [Formula: see text]-potential is embedded in the LSN. Spin polarization ratio can be controlled by altering weight or position of [Formula: see text]-potential. Based on such an LSN, a structurally-tunable electron-spin filter may be obtained for spintronics device applications.

A stochastic resonator in a layered semiconductor device

In this paper, we propose a device that picks up a periodic but weak signal by amplifying it assisted by the existing background noise. The device consists of a doped layered semiconductor with three gates that generate a one-dimensional double-well potential along the semiconductor. A laser coolant is to be shined on the other side of the central gate perpendicular to the one-dimensional layer causing triple-well potential. A weak tunable oscillator imposed parallel to the layer that rocks the potential landscape can pick up an incoming signal of interest as a result of resonance. To justify the model, we carried out analytic calculation as well as Monte Carlo simulation. The two approaches agree reasonably well for all the different parameter values we used.