scholarly journals N−nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy

2020 ◽  
Vol 102 (12) ◽  
Author(s):  
D. Tjeertes ◽  
T. J. F. Verstijnen ◽  
A. Gonzalo ◽  
J. M. Ulloa ◽  
M. S. Sharma ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional

Atomic‐scale view of AlGaAs/GaAs heterostructures with cross‐sectional scanning tunneling microscopy

1993 ◽  
Vol 63 (9) ◽  
pp. 1273-1275 ◽  
Author(s):  
M. B. Johnson ◽  
U. Maier ◽  
H.‐P. Meier ◽  
H. W. M. Salemink
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional

Scanning Tunneling Microscopy Studies of GaAs1-xPx Single Crystals

1995 ◽  
Vol 378 ◽  
Author(s):  
X. Liu ◽  
E. R. Weber ◽  
D. F. Ogletree ◽  
M. Salmeron ◽  
T. Slupinski
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Single Crystals ◽  
Spectroscopic Studies ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional ◽  
Group V ◽  
Imaging Results ◽  
The Difference

AbstractWe report cross-sectional scanning tunneling microscopy studies of GaAsP single crystals grown by the Liquid Encapsulated Czochralski technique. We show that the two group-V elements can be clearly distinguished, which is attributed to the difference in energies of surface dangling bond states of As and P. Our atomic scale imaging results show alloy composition in agreement with spectroscopic studies. They also provide valuable information about atomic scale alloy fluctuations and clustering effects.

Cross-Sectional Scanning Tunneling Microscopy of III-V Semiconductor Structures

1994 ◽  
Vol 332 ◽  
Author(s):  
R. M. Feenstra ◽  
A. Vaterlaus ◽  
J. M. Woodall ◽  
D. A. Collins ◽  
T. C. McGill
Keyword(s):  
Low Temperature ◽  
Scanning Tunneling Microscopy ◽  
Electronic Spectroscopy ◽  
Structural Features ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Layered Semiconductor ◽  
Cross Sectional ◽  
Semiconductor Structures

ABSTRACTThe method of cross-sectional scanning tunneling microscopy (STM) is described. Illustrative examples are given of studies of III-V semiconductor systems, including low-temperature-grown (LT) GaAs, and InAs/GaSb superlattices. In each case, the STM permits the observation of structural features on an atomic scale. The associated electronic spectroscopy for states a few eV on either side of the Fermi-level can be determined. Such information is relevant for the operation of devices constructed from these layered semiconductor systems.

Cross-Sectional Scanning Tunneling Microscopy of III-V Quantum Structures

1994 ◽  
Vol 332 ◽  
Author(s):  
M.B. Johnson ◽  
M. Pfister ◽  
S.F. Alvarado ◽  
H.W.M. Salemink
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Atomic Scale ◽  
Quantum Structures ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Surface Layers ◽  
Cross Sectional ◽  
Near Surface ◽  
Quantum Well Wires

ABSTRACTIn this paper, we report on the use of cross-sectional scanning tunneling microscopy (XSTM) to analyze several aspects of MBE-grown III-V quantum structures on an atomic scale. In particular, we discuss our recent work to identify various atomic species within the same chemical group (e.g. Al and Ga within the group Ill sublattice of AlGaAs) thereby allowing the determination of atomic roughness at GaAs/A1GaAs interfaces and alloy clustering in AlGaAs. We demonstrate and discuss the sensitivity of the STM to individual dopants in the near surface layers, as well as to the local carrier concentration. Lastly, we use XSTM to obtain images of cross-sectioned GaAs/AIGaAs quantum well wires with atomic detail.

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