Semiconductor Interfaces at the Sub-Nanometer Scale
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Published By Springer Netherlands

9789401049009, 9789401120340

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

A Comparison of Growth by Molecular Beam Epitaxy, Metalorganic Chemical Vapour Deposition and Chemical Beam Epitaxy

Semiconductor Interfaces at the Sub-Nanometer Scale ◽

10.1007/978-94-011-2034-0_6 ◽

1993 ◽

pp. 57-61

Author(s):

C. T. Foxon

Keyword(s):

Molecular Beam Epitaxy ◽

Chemical Vapour Deposition ◽

Molecular Beam ◽

Vapour Deposition ◽

Chemical Vapour ◽

Chemical Beam Epitaxy ◽

Metalorganic Chemical Vapour Deposition ◽

Metalorganic Chemical

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Theory of Atomic-Scale Processes during Epitaxial Growth: Current Status

Semiconductor Interfaces at the Sub-Nanometer Scale ◽

10.1007/978-94-011-2034-0_5 ◽

1993 ◽

pp. 45-55 ◽

Cited By ~ 2

Author(s):

Dimitri D. Vvedensky

Keyword(s):

Epitaxial Growth ◽

Atomic Scale ◽

Current Status

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Atomic-Scale View of Epitaxial Layers with Cross-Sectional Scanning Tunneling Microscopy

Semiconductor Interfaces at the Sub-Nanometer Scale ◽

10.1007/978-94-011-2034-0_22 ◽

1993 ◽

pp. 207-216

Author(s):

M. B. Johnson ◽

U. Maier ◽

H. P. Meier ◽

H. Salemink ◽

E. T. Yu ◽

...

Keyword(s):

Scanning Tunneling Microscopy ◽

Atomic Scale ◽

Scanning Tunneling ◽

Epitaxial Layers ◽

Tunneling Microscopy ◽

Cross Sectional

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Group IV Strained Layer Systems

Semiconductor Interfaces at the Sub-Nanometer Scale ◽

10.1007/978-94-011-2034-0_17 ◽

1993 ◽

pp. 161-171

Author(s):

E. Kasper

Keyword(s):

Group Iv ◽

Strained Layer

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Epitaxial Interfaces of III-V Heterostructures: Atomic Resolution, Composition Fluctuations and Doping

Semiconductor Interfaces at the Sub-Nanometer Scale ◽

10.1007/978-94-011-2034-0_16 ◽

1993 ◽

pp. 151-160 ◽

Cited By ~ 1

Author(s):

H. W. M. Salemink ◽

M. B. Johnson ◽

U. Maier ◽

P. Koenraad ◽

O. Albrektsen

Keyword(s):

Atomic Resolution ◽

Composition Fluctuations

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Cross-Sectional Scanning Tunneling Microscopy of GaAs Doping Superlattices: Pinned vs. Unpinned Surfaces

Semiconductor Interfaces at the Sub-Nanometer Scale ◽

10.1007/978-94-011-2034-0_14 ◽

1993 ◽

pp. 127-137 ◽

Cited By ~ 2

Author(s):

R. M. Feenstra ◽

A. Vaterlaus ◽

E. T. Yu ◽

P. D. Kirchner ◽

C. L. Lin ◽

...

Keyword(s):

Scanning Tunneling Microscopy ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional

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Resonant Tunnelling via the Bound States of Shallow Donors

Semiconductor Interfaces at the Sub-Nanometer Scale ◽

10.1007/978-94-011-2034-0_9 ◽

1993 ◽

pp. 83-88

Author(s):

J-W Sakai ◽

P. H. Beton ◽

M. Henini ◽

P. C. Main ◽

L. Eaves ◽

...

Keyword(s):

Bound States ◽

Resonant Tunnelling ◽

Shallow Donors

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The Role of Surface Reconstructions in MBE Growth of GaAs

Semiconductor Interfaces at the Sub-Nanometer Scale ◽

10.1007/978-94-011-2034-0_7 ◽

1993 ◽

pp. 63-73 ◽

Cited By ~ 1

Author(s):

M. D. Pashley ◽

K. W. Haberern

Keyword(s):

Mbe Growth ◽

Surface Reconstructions

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Diffusion of Si in δ-Doped GaAs Studied by Magneto Transport

Semiconductor Interfaces at the Sub-Nanometer Scale ◽

10.1007/978-94-011-2034-0_4 ◽

1993 ◽

pp. 35-43 ◽

Cited By ~ 1

Author(s):

P. M. Koenraad ◽

I. Bársony ◽

J. C. M. Henning ◽

J. A. A. P. Perenboom ◽

J. H. Wolter

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Do Periodic Interface Corrugations Cause the Unusual Optical Properties of GaAs/AIAs Heterostructures Grown on Non-(100)-Oriented Substrates?

Semiconductor Interfaces at the Sub-Nanometer Scale ◽

10.1007/978-94-011-2034-0_24 ◽

1993 ◽

pp. 231-239

Author(s):

K.H Ploog ◽

R. Nötzel

Keyword(s):

Optical Properties

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Semiconductor Interfaces at the Sub-Nanometer ScaleLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Springer Netherlands

A Comparison of Growth by Molecular Beam Epitaxy, Metalorganic Chemical Vapour Deposition and Chemical Beam Epitaxy

Theory of Atomic-Scale Processes during Epitaxial Growth: Current Status

Atomic-Scale View of Epitaxial Layers with Cross-Sectional Scanning Tunneling Microscopy

Group IV Strained Layer Systems

Epitaxial Interfaces of III-V Heterostructures: Atomic Resolution, Composition Fluctuations and Doping

Cross-Sectional Scanning Tunneling Microscopy of GaAs Doping Superlattices: Pinned vs. Unpinned Surfaces

Resonant Tunnelling via the Bound States of Shallow Donors

The Role of Surface Reconstructions in MBE Growth of GaAs

Diffusion of Si in δ-Doped GaAs Studied by Magneto Transport

Do Periodic Interface Corrugations Cause the Unusual Optical Properties of GaAs/AIAs Heterostructures Grown on Non-(100)-Oriented Substrates?

Semiconductor Interfaces at the Sub-Nanometer Scale
Latest Publications