Cross-Sectional Scanning Tunneling Microscopy of III-V Semiconductor Structures

1994 ◽  
Vol 332 ◽  
Author(s):  
R. M. Feenstra ◽  
A. Vaterlaus ◽  
J. M. Woodall ◽  
D. A. Collins ◽  
T. C. McGill
Keyword(s):  
Low Temperature ◽  
Scanning Tunneling Microscopy ◽  
Electronic Spectroscopy ◽  
Structural Features ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Layered Semiconductor ◽  
Cross Sectional ◽  
Semiconductor Structures

ABSTRACTThe method of cross-sectional scanning tunneling microscopy (STM) is described. Illustrative examples are given of studies of III-V semiconductor systems, including low-temperature-grown (LT) GaAs, and InAs/GaSb superlattices. In each case, the STM permits the observation of structural features on an atomic scale. The associated electronic spectroscopy for states a few eV on either side of the Fermi-level can be determined. Such information is relevant for the operation of devices constructed from these layered semiconductor systems.

Atomic‐scale view of AlGaAs/GaAs heterostructures with cross‐sectional scanning tunneling microscopy

1993 ◽  
Vol 63 (9) ◽  
pp. 1273-1275 ◽  
Author(s):  
M. B. Johnson ◽  
U. Maier ◽  
H.‐P. Meier ◽  
H. W. M. Salemink
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional

scholarly journals N−nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy

2020 ◽  
Vol 102 (12) ◽  
Author(s):  
D. Tjeertes ◽  
T. J. F. Verstijnen ◽  
A. Gonzalo ◽  
J. M. Ulloa ◽  
M. S. Sharma ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional

Scanning Tunneling Microscopy Studies of GaAs1-xPx Single Crystals

1995 ◽  
Vol 378 ◽  
Author(s):  
X. Liu ◽  
E. R. Weber ◽  
D. F. Ogletree ◽  
M. Salmeron ◽  
T. Slupinski
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Single Crystals ◽  
Spectroscopic Studies ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional ◽  
Group V ◽  
Imaging Results ◽  
The Difference

AbstractWe report cross-sectional scanning tunneling microscopy studies of GaAsP single crystals grown by the Liquid Encapsulated Czochralski technique. We show that the two group-V elements can be clearly distinguished, which is attributed to the difference in energies of surface dangling bond states of As and P. Our atomic scale imaging results show alloy composition in agreement with spectroscopic studies. They also provide valuable information about atomic scale alloy fluctuations and clustering effects.

Roughness of electronic interfaces in Ga As p-n multilayers investigated by cross-sectional scanning tunneling microscopy

2002 ◽  
Vol 719 ◽  
Author(s):  
N. D. Jäger ◽  
K. Urban ◽  
E. R. Weber ◽  
Ph. Ebert
Keyword(s):  
Charge Carrier ◽  
Scanning Tunneling Microscopy ◽  
Fermi Energy ◽  
Scanning Tunneling ◽  
Dopant Atom ◽  
Tunneling Microscopy ◽  
Cross Sectional ◽  
Semiconductor Structures ◽  
Dopant Atoms ◽  
The Individual

AbstractWe investigated the roughness of the electronic interfaces of GaAs p-n multilayers using cross-sectional scanning tunneling microscopy. We demonstrate that these interfaces exhibit a much larger roughness than the underlying essentially perfect ‘metallurgical’ interface, due to the individual long range electrostatic screening fields around each dopant atom near the interface and due to a clustering of dopant atoms. The clustering and the inherently connected local lack of dopant atoms gives rise to charge carrier depletion zones extending locally through entire nominally homogeneously doped layers once the layer thickness is close to the cluster dimensions. Thus, local variations in the dopant atom distribution limit the precision of the spatial and energetic positioning of the Fermi energy in nanoscale semiconductor structures.

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