scholarly journals PREPARATION AND STUDY OF n-GaP LAYERS DEPOSITED ON p-Si SUBSTRATES BY LIQUID PHASE EPITAXY

1995 ◽  
Vol 18 (1) ◽  
pp. 113-113
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Si Substrates

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

Al0.3Ga0.7As/Al0.05Ga0.95As light‐emitting diodes on GaAs‐coated Si substrates grown by liquid phase epitaxy

1988 ◽  
Vol 53 (13) ◽  
pp. 1201-1203 ◽  
Author(s):  
Shiro Sakai ◽  
Shi S. Chang ◽  
Ramu V. Ramaswamy ◽  
Jae‐Hoon Kim ◽  
Gouri Radhakrishnan ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Si Substrates

Liquid‐phase epitaxy and characterization of Si1−xGexlayers on Si substrates

1990 ◽  
Vol 68 (5) ◽  
pp. 2158-2163 ◽  
Author(s):  
P. O. Hansson ◽  
J. H. Werner ◽  
L. Tapfer ◽  
L. P. Tilly ◽  
E. Bauser
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Si Substrates

scholarly journals Liquid phase epitaxy set-up designed for in situ X-ray study of SiGe island growth on (001) Si substrates

2008 ◽  
Vol 43 (12) ◽  
pp. 1278-1285 ◽  
Author(s):  
Th. Teubner ◽  
U. Jendritzki ◽  
K. Böttcher ◽  
G. Schadow ◽  
R. Heimburger ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Island Growth ◽  
X Ray ◽  
Si Substrates ◽  
Set Up

Defect-Free Coalescence of Silicon Layers Over SiO2

1993 ◽  
Vol 317 ◽  
Author(s):  
F. Banhart ◽  
N. Nagel ◽  
F. Phillipp ◽  
E. Bauser
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Electron Diffraction ◽  
Liquid Phase Epitaxy ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Si Substrates ◽  
Crystallographic Defects ◽  
Convergent Beam ◽  
Adequate Design

ABSTRACTDefect-free coalescence of Si layers which grow laterally over partially oxidized Si substrates is achieved in liquid phase epitaxy from indium solution. An adequate design of the oxide pattern on (111) substrates ascertains that the growth fronts of the Si layers merge gradually on the SiO2 and avoids the formation of inclusions or crystallographic defects. Electron Microscopy in diffraction contrast and convergent beam electron diffraction reveal that the epitaxial Si layers bend towards the substrate as they grow laterally over the SiO2 film. The layers straighten out again as they merge and form a perfect seam of coalescence.

Properties of SiGe Alloys Grown on Si Substrates by Liquid Phase Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
M.I. Alonso ◽  
H.-P. Trah ◽  
E. Bauser ◽  
H. Cerva ◽  
H.P. Strunki
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Cooling Rate ◽  
Liquid Phase Epitaxy ◽  
Composition Range ◽  
Saturation Temperature ◽  
Entire Composition Range ◽  
Growth Morphology ◽  
Si Substrates

ABSTRACTSi1−zGez single crystal layers were grown on Si(iii) by liquid phase epitaxy (LPE) over the entire composition range (0 ≤ x ( 1). Using Sn as solvent all compositions were produced; alloys with compositions 0 ≤ x ≤ 0.75 were obtained using In as solvent; the range 0.75 ≤ x ≤ 1 was covered with Bi solvent. The solvents used, the composition of the solution, the saturation temperature, and the cooling rate, were found to strongly influence the growth morphology.

Surface Morphology of LPE SiGe Layers Grown on (100) Si Substrates

1997 ◽  
Vol 485 ◽  
Author(s):  
A. M. Sembian ◽  
I. Silier ◽  
K. Davies ◽  
A. Gutjahr ◽  
K. Lyutovich ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Surface Morphology ◽  
Cooling Rate ◽  
Liquid Phase Epitaxy ◽  
Growth Conditions ◽  
Cooling Rates ◽  
Si Substrates ◽  
Significant Change

AbstractWe have investigated the surface morphology of thick SiGe layers grown on Si(100) substrates. SiGe layers containing different Ge concentrations (from 0 to 16 at.%) and having thickness of about 15μm are prepared by liquid phase epitaxy (LPE) method using various growth conditions. The wavelength of undulation of SiGe layers is found to be increasing when we adopt low cooling rates during LPE process. The roughness of the layer does not show any significant change with cooling rate.

High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates

2004 ◽  
Vol 84 (14) ◽  
pp. 2563-2565 ◽  
Author(s):  
Yaocheng Liu ◽  
Michael D. Deal ◽  
James D. Plummer
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Liquid Phase Epitaxy ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Si Substrates

Background donor concentration in HgCdTe

2015 ◽  
Vol 23 (3) ◽  
Author(s):  
I.I. Izhnin ◽  
K.D. Mynbaev ◽  
A.V. Voitsekhovsky ◽  
A.G. Korotaev ◽  
O.I. Fitsych ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Molecular Beam Epitaxy ◽  
Liquid Phase Epitaxy ◽  
Molecular Beam ◽  
Donor Concentration ◽  
Bulk Crystals ◽  
Ion Milling ◽  
Si Substrates ◽  
Different Types

AbstractStudies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating acceptors. In bulk crystals, films grown with liquid phase epitaxy and films fabricated with molecular beam epitaxy (MBE) on Si substrates, BDC of the order of ~10

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