Properties of SiGe Alloys Grown on Si Substrates by Liquid Phase Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
M.I. Alonso ◽  
H.-P. Trah ◽  
E. Bauser ◽  
H. Cerva ◽  
H.P. Strunki
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Cooling Rate ◽  
Liquid Phase Epitaxy ◽  
Composition Range ◽  
Saturation Temperature ◽  
Entire Composition Range ◽  
Growth Morphology ◽  
Si Substrates

ABSTRACTSi1−zGez single crystal layers were grown on Si(iii) by liquid phase epitaxy (LPE) over the entire composition range (0 ≤ x ( 1). Using Sn as solvent all compositions were produced; alloys with compositions 0 ≤ x ≤ 0.75 were obtained using In as solvent; the range 0.75 ≤ x ≤ 1 was covered with Bi solvent. The solvents used, the composition of the solution, the saturation temperature, and the cooling rate, were found to strongly influence the growth morphology.

Surface Morphology of LPE SiGe Layers Grown on (100) Si Substrates

1997 ◽  
Vol 485 ◽  
Author(s):  
A. M. Sembian ◽  
I. Silier ◽  
K. Davies ◽  
A. Gutjahr ◽  
K. Lyutovich ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Surface Morphology ◽  
Cooling Rate ◽  
Liquid Phase Epitaxy ◽  
Growth Conditions ◽  
Cooling Rates ◽  
Si Substrates ◽  
Significant Change

AbstractWe have investigated the surface morphology of thick SiGe layers grown on Si(100) substrates. SiGe layers containing different Ge concentrations (from 0 to 16 at.%) and having thickness of about 15μm are prepared by liquid phase epitaxy (LPE) method using various growth conditions. The wavelength of undulation of SiGe layers is found to be increasing when we adopt low cooling rates during LPE process. The roughness of the layer does not show any significant change with cooling rate.

High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates

2004 ◽  
Vol 84 (14) ◽  
pp. 2563-2565 ◽  
Author(s):  
Yaocheng Liu ◽  
Michael D. Deal ◽  
James D. Plummer
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Liquid Phase Epitaxy ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Si Substrates

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique

2003 ◽  
Vol 42 (Part 2, No.1A/B) ◽  
pp. L4-L6 ◽  
Author(s):  
Fumio Kawamura ◽  
Tomoya Iwahashi ◽  
Kunimichi Omae ◽  
Masanori Morishita ◽  
Masashi Yoshimura ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Liquid Phase Epitaxy

Liquid-phase epitaxy of single-crystal erbium-ytterbium codoped YAl3(BO3)4 layers as key components of planar waveguides

2011 ◽  
Vol 47 (9) ◽  
pp. 979-982 ◽  
Author(s):  
E. A. Volkova ◽  
D. A. Ksenofontov ◽  
V. V. Maltsev ◽  
N. I. Leonyuk ◽  
Yu. K. Kabalov ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Liquid Phase Epitaxy ◽  
Planar Waveguides

Mössbauer effect of magnetoelectric Y3Fe5O12(YIG) single crystal prepared by liquid phase epitaxy

1994 ◽  
Vol 161 (1) ◽  
pp. 141-146
Author(s):  
Hiroshi Komada ◽  
Kazuhiro Saito ◽  
Kay Kohn ◽  
Midori Tanaka ◽  
Kiiti Siratori ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Liquid Phase Epitaxy ◽  
Mössbauer Effect ◽  
Mossbauer Effect
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