Defect-Free Coalescence of Silicon Layers Over SiO2

1993 ◽  
Vol 317 ◽  
Author(s):  
F. Banhart ◽  
N. Nagel ◽  
F. Phillipp ◽  
E. Bauser
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Electron Diffraction ◽  
Liquid Phase Epitaxy ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Si Substrates ◽  
Crystallographic Defects ◽  
Convergent Beam ◽  
Adequate Design

ABSTRACTDefect-free coalescence of Si layers which grow laterally over partially oxidized Si substrates is achieved in liquid phase epitaxy from indium solution. An adequate design of the oxide pattern on (111) substrates ascertains that the growth fronts of the Si layers merge gradually on the SiO2 and avoids the formation of inclusions or crystallographic defects. Electron Microscopy in diffraction contrast and convergent beam electron diffraction reveal that the epitaxial Si layers bend towards the substrate as they grow laterally over the SiO2 film. The layers straighten out again as they merge and form a perfect seam of coalescence.

Study of the Metamict Transformation in α-Quartz Using High-Resolution Electron Microscopy and Convergent Beam Electron Diffraction

1981 ◽  
Vol 6 ◽  
Author(s):  
M. R. Pascucci ◽  
J. L. Hutchison ◽  
L. W. Hobbs
Keyword(s):  
Electron Microscopy ◽  
Electron Diffraction ◽  
High Resolution Electron Microscopy ◽  
Convergent Beam Electron Diffraction ◽  
Transformation Model ◽  
Beam Electron ◽  
Surrounding Matrix ◽  
Resolution Electron ◽  
Two Stages ◽  
Convergent Beam

ABSTRACTThe metamict transformation under electron irradiation has been studied in α-quartz using transmission electron microscopy (TEM) and convergent-beam electron diffraction (CBD). The transformation occurs in two stages: heterogeneous nucleation of discrete disordered inclusions and a slower homogeneous loss of crystalline order in the surrounding matrix. Both features are attributable to solidstate radiolysis, a mechanism for which is proposed. Ultrahigh resolution TEM structure images and information from zeroth and high order Laue zones in CBD confirm that shortrange correlations are the first to be lost and that longerrange correlations persist well into the metamict transformation. A transformation model is advanced in which progressive disorder evolves from small displacements of individual [SiO4] coordination units, made possible by lowered connectivity, within a framework of long-range ordered material.

Characterization Of APB's In GaP

1996 ◽  
Vol 442 ◽  
Author(s):  
Dov Cohen ◽  
C. Barry Carter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Convergent Beam Electron Diffraction ◽  
Antiphase Boundaries ◽  
Beam Electron ◽  
Transmission Electron ◽  
Convergent Beam ◽  
Crystallographic Orientations

AbstractAntiphase boundaries in GaP crystals epitactically grown on Si (001) have been characterized using transmission electron microscopy. Convergent-beam electron diffraction was used to identify the antiphase-related grains. The antiphase boundaries were observed to adopt facets parallel to specific crystallographic orientations. Furthermore, stacking-fault-like contrast was observed along the interface suggesting that the domains may be offset from one another by a rigid-body lattice translation.

scholarly journals Dislocation Analysis in SiGe Heterostructures by Large-Angle Convergent Beam Electron Diffraction

Crystals ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 5
Author(s):  
Heiko Groiss
Keyword(s):  
Electron Microscopy ◽  
Electron Diffraction ◽  
Strain Relaxation ◽  
Large Angle ◽  
Convergent Beam Electron Diffraction ◽  
Self Organization ◽  
Detailed Knowledge ◽  
Beam Electron ◽  
Transmission Electron ◽  
Convergent Beam

Dislocations play a crucial role in self-organization and strain relaxation mechanisms in SiGe heterostructures. In most cases, they should be avoided, and different strategies exist to exploit their nucleation properties in order to manipulate their position. In either case, detailed knowledge about their exact Burgers vectors and possible dislocation reactions are necessary to optimize the fabrication processes and the properties of SiGe materials. In this review a brief overview of the dislocation mechanisms in the SiGe system is given. The method of choice for dislocation characterization is transmission electron microscopy. In particular, the article provides a detailed introduction into large-angle convergent-beam electron diffraction, and gives an overview of different application examples of this method on SiGe structures and related systems.

A large angle convergent beam electron diffraction study of the core nature of dislocations in 3C-SiC

1996 ◽  
Vol 11 (4) ◽  
pp. 884-894 ◽  
Author(s):  
X. J. Ning ◽  
P. Pirouz
Keyword(s):  
Electron Microscopy ◽  
Electron Diffraction ◽  
Partial Dislocation ◽  
Large Angle ◽  
Electron Diffraction Study ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
The Core ◽  
Partial Dislocations ◽  
Convergent Beam

Dislocations produced by 1300 °C indentation of the silicon-terminated (111) face of 3C-SiC were investigated by transmission electron microscopy. They were all found to be either widely separated partial dislocation pairs, or else, arrays of single partial dislocation half-loops on neighboring parallel slip planes and having the same Burgers vector. It was concluded that in the latter case, each array consisted of leading partial dislocations which had nucleated without accompanying trailing partial dislocations. The core nature of both dissociated dislocations and arrays of single partial dislocations has been determined by the technique of large angle convergent beam electron diffraction. The results indicate that the core of all single partial dislocation half-loops constituting an array consists of silicon atoms. It is concluded that, with the present deformation geometry, the Si-core partial dislocations are preferentially nucleated before the C-core partial dislocations. In the case of a dissociated dislocation, when a pair of partials was present, electron microscopy observations revealed that the morphology of the two partial dislocations was very different; while the Si-core partials were smooth, the C-core partial dislocations had a zig-zag morphology.

Lattice parameter measurement by convergent-beam electron diffraction

1994 ◽  
Vol 52 ◽  
pp. 952-953
Author(s):  
J. M. Howe
Keyword(s):  
Electron Microscopy ◽  
Electron Diffraction ◽  
Lattice Parameter ◽  
Convergent Beam Electron Diffraction ◽  
Lattice Parameters ◽  
Parameter Measurement ◽  
Parameter Determination ◽  
Beam Electron ◽  
Lattice Parameter Measurement ◽  
Convergent Beam

Convergent-beam electron diffraction (CBED) should be an ideal technique for determining the lattice parameters of regions as small as a nanometer in size. This capability was first demonstrated about fifteen years ago and CBED has been used in a number of analyses since this time. In general though, the technique has been slow to catch on, except in the semiconductor area, where CBED has been usedextensively to measure lattice parameters in Si/SixGe1-x superlattices. Possible reasons for the slow adoption of this technique by the electron microscopy and materials science communities may be that: 1) CBED is usually dynamical, and it has become apparent that the use of simple kinematical calculations can lead to substantial errors (or at least some uncertainty) in quantitative lattice parameter determination, 2) a standardized procedure for determining the lattice parameters in the most general case, when six parameters are unknown, has not been established, and 3) surface relaxation associated with the thin foils used in transmission electron microscopy (TEM) may distort the sample and cause it to be unlike bulk material. The purpose of this paper is to assess the present status of lattice parameter measurement by CBED, particularly with respect to the three areas just mentioned.

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