High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates

2004 ◽  
Vol 84 (14) ◽  
pp. 2563-2565 ◽  
Author(s):  
Yaocheng Liu ◽  
Michael D. Deal ◽  
James D. Plummer
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Liquid Phase Epitaxy ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Si Substrates

Properties of SiGe Alloys Grown on Si Substrates by Liquid Phase Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
M.I. Alonso ◽  
H.-P. Trah ◽  
E. Bauser ◽  
H. Cerva ◽  
H.P. Strunki
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Cooling Rate ◽  
Liquid Phase Epitaxy ◽  
Composition Range ◽  
Saturation Temperature ◽  
Entire Composition Range ◽  
Growth Morphology ◽  
Si Substrates

ABSTRACTSi1−zGez single crystal layers were grown on Si(iii) by liquid phase epitaxy (LPE) over the entire composition range (0 ≤ x ( 1). Using Sn as solvent all compositions were produced; alloys with compositions 0 ≤ x ≤ 0.75 were obtained using In as solvent; the range 0.75 ≤ x ≤ 1 was covered with Bi solvent. The solvents used, the composition of the solution, the saturation temperature, and the cooling rate, were found to strongly influence the growth morphology.

scholarly journals High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing

2010 ◽  
Vol 97 (6) ◽  
pp. 063503 ◽  
Author(s):  
Hyun-Yong Yu ◽  
Szu-lin Cheng ◽  
Jin-Hong Park ◽  
Ali K. Okyay ◽  
M. Cengiz Onbaşlı ◽  
...  
Keyword(s):  
Single Crystal ◽  
High Quality ◽  
Hydrogen Annealing ◽  
High Quality Single Crystal ◽  
Si Substrates

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

Materials with Dirac Loops: A Potential Solution for Next-generation Electronics

2021 ◽  
Vol 1 ◽  
Keyword(s):  
Electronic Structure ◽  
Single Crystal ◽  
Potential Solution ◽  
Next Generation ◽  
Rhenium Oxide ◽  
High Quality ◽  
High Quality Single Crystal

A high-quality single crystal of rhenium oxide shows significantly large magnetoresistance, potentially originating from a unique electronic structure called “hourglass Dirac chain” protected by the symmetry of the crystal.

Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition

2019 ◽  
Vol 19 (4) ◽  
pp. 2030-2036 ◽  
Author(s):  
Lawrence Boyu Young ◽  
Chao-Kai Cheng ◽  
Keng-Yung Lin ◽  
Yen-Hsun Lin ◽  
Hsien-Wen Wan ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Single Crystal ◽  
Atomic Layer ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Layer Deposition

Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique

2003 ◽  
Vol 42 (Part 2, No.1A/B) ◽  
pp. L4-L6 ◽  
Author(s):  
Fumio Kawamura ◽  
Tomoya Iwahashi ◽  
Kunimichi Omae ◽  
Masanori Morishita ◽  
Masashi Yoshimura ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Liquid Phase Epitaxy
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