Liquid‐phase epitaxy and characterization of Si1−xGexlayers on Si substrates

1990 ◽  
Vol 68 (5) ◽  
pp. 2158-2163 ◽  
Author(s):  
P. O. Hansson ◽  
J. H. Werner ◽  
L. Tapfer ◽  
L. P. Tilly ◽  
E. Bauser
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Si Substrates

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

Surface Characterization of GaN(0001) Grown by Liquid Phase Epitaxy Using Coaxial Impact-Collision Ion Scattering Spectroscopy

2008 ◽  
Vol 47 (9) ◽  
pp. 7281-7284 ◽  
Author(s):  
Hirofumi Suto ◽  
Shunjiro Fujii ◽  
Fumio Kawamura ◽  
Masashi Yoshimura ◽  
Yasuo Kitaoka ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Surface Characterization ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy

Growth and characterization of GaSb epilayers by liquid phase epitaxy

1990 ◽  
Vol 25 (2) ◽  
pp. 843-847 ◽  
Author(s):  
Y. K. Su ◽  
F. S. Juang
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy

Growth and characterization of high-quality GaInAsSb layers on GaSb substrates by liquid-phase epitaxy

1992 ◽  
Vol 35 (4) ◽  
pp. 523-528 ◽  
Author(s):  
Meng-Chyi Wu ◽  
Chi-Ching Chen ◽  
Ching-Ting Lee
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Quality

Characterization of dilute InPN layers grown by liquid phase epitaxy

2008 ◽  
Vol 104 (10) ◽  
pp. 103715 ◽  
Author(s):  
T. D. Das ◽  
S. Dhar ◽  
B. M. Arora
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy
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