Evolution of SOI MOSFETs: from Single Gate to Multiple Gates

2003 ◽  
Vol 765 ◽  
Author(s):  
Jean-Pierre Colinge
Keyword(s):  
Current Drive ◽  
Electrical Characteristics ◽  
Short Channel ◽  
Channel Characteristics ◽  
Device Structures ◽  
History Of ◽  
Soi Technology

AbstractTo improve short-channel characteristics and increase current drive, SOI technology is shifting focus from “classical” single-gate MOSFET architectures to multiple-gate device structures. This paper traces the history of single- and multiple-gate SOI MOSFETs and summarizes the electrical characteristics of such devices.

STUDY OF ELECTRICAL CHARACTERISTIC FOR 50NM AND 10NM SOI BODY THICKNESS IN MOSFET DEVICE

2015 ◽  
Vol 77 (21) ◽  
Author(s):  
M.N.I.A Aziz ◽  
F. Salehuddin ◽  
A.S.M. Zain ◽  
K.E. Kaharudin
Keyword(s):  
Thin Film ◽  
Electrical Characteristic ◽  
Silicon On Insulator ◽  
Electrical Characteristics ◽  
Short Channel ◽  
Doping Density ◽  
Soi Mosfet ◽  
Buried Oxide ◽  
Soi Technology ◽  
Better Than

Silicon-on-insulator (SOI) technology is an effective approach of mitigating the short channel effect (SCE) problems. The SOI is believed to be capable of suppressing the SCE, thereby improving the overall electrical characteristics of MOSFET device. SCE in SOI MOSFET is heavily influenced by thin film thickness, thin-film doping density and buried oxide (BOX) thickness. This paper will analyze the effect of BOX towards SOI MOSFET device. The 50nm and 10nm thickness of buried oxide in SOI MOSFET was developed by using SILVACO TCAD tools, specifically known as Athena and Atlas modules. From the observation, the electrical characteristic of 100nm thickness is slightly better than 50nm and 10nm. It is observed that the value drive current of 10nm and 100nm thickness SOI MOSFET was 6.9% and 11% lower than 50nm respectively, but the overall 50nm is superior. However, the electrical characteristics of 10nm SOI MOSFET are still closer and within the range of ITRS 2013 prediction.

Short channel characteristics of quasi-single-drain MOSFETs

2001 ◽  
Vol 22 (7) ◽  
pp. 351-353 ◽  
Author(s):  
K. Sugihara ◽  
Y. Abe ◽  
T. Oishi ◽  
N. Miura ◽  
Y. Tokuda
Keyword(s):  
Short Channel ◽  
Channel Characteristics

Electrical characteristics and simulations of self-switching-diodes in SOI technology

2007 ◽  
Vol 51 (9) ◽  
pp. 1245-1249 ◽  
Author(s):  
G. Farhi ◽  
E. Saracco ◽  
J. Beerens ◽  
D. Morris ◽  
S.A. Charlebois ◽  
...  
Keyword(s):  
Electrical Characteristics ◽  
Soi Technology

Electrical characteristics of lateral organic bulk heterojunction device structures

2012 ◽  
Vol 13 (7) ◽  
pp. 1185-1191 ◽  
Author(s):  
Christopher Lombardo ◽  
Zi-En Ooi ◽  
Eric Danielson ◽  
Ananth Dodabalapur
Keyword(s):  
Bulk Heterojunction ◽  
Electrical Characteristics ◽  
Device Structures ◽  
Heterojunction Device

Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures

2017 ◽  
Vol 897 ◽  
pp. 545-548 ◽  
Author(s):  
Sauvik Chowdhury ◽  
Collin W. Hitchcock ◽  
T. Paul Chow
Keyword(s):  
Comparative Evaluation ◽  
Design Parameters ◽  
Electrical Characteristics ◽  
Cryogenic Temperatures ◽  
Short Channel Effects ◽  
Operating Characteristics ◽  
Short Channel ◽  
Power Mosfets ◽  
Unique Material ◽  
Channel Effects

We present a comparative study of the electrical characteristics of different 1200V commercial SiC power MOSFETs at cryogenic temperatures down to 77 K. As compared to conventional silicon power MOSFETs, SiC MOSFETs show very different operating characteristics at low temperatures which is due to unique material and design parameters used in SiC MOSFETs. Of particular interest is a non-linear mixed triode/pentode-like I-V characteristic exhibited by all SiC MOSFETs at 77 K, which is demonstrated to be due to short channel effects in the constituent JFET.

scholarly journals Modeling of a GaN Based Static Induction Transistor

1999 ◽  
Vol 4 (S1) ◽  
pp. 697-702 ◽  
Author(s):  
Gabriela E. Bunea ◽  
S.T. Dunham ◽  
T.D. Moustakas
Keyword(s):  
Operating Conditions ◽  
Short Channel ◽  
Flow Equations ◽  
Static Induction Transistors ◽  
Thermal Boundary Conditions ◽  
Heating Effects ◽  
Device Structures ◽  
Static Induction Transistor ◽  
Static Induction ◽  
Voltage Swing

Static induction transistors (SITs) are short channel FET structures which are suitable for high power, high frequency and high temperature applications. GaN has particularly favorable properties for SIT operation. However, such a device has not yet been fabricated. In this paper we report simulation studies on GaN static induction transistors over a range of device structures and operating conditions. The transistor was modeled with coupled drift-diffusion and heat-flow equations. We found that the performance of the device depends sensitively on the thermal boundary conditions, as self-heating effects limit the maximum voltage swing.

History of Australian Astronomy: The Pre-History of the Parkes 64-m Telescope

1981 ◽  
Vol 4 (2) ◽  
pp. 267-273 ◽  
Author(s):  
E. G. Bowen
Keyword(s):  
Radio Telescope ◽  
Mechanical Design ◽  
Electrical Characteristics ◽  
History Of

A great deal has been written about the mechanical design and the electrical characteristics of the Parkes radio telescope, but very little has been written about the pre-history — the factors leading up to the construction of that instrument. I want to spend a little time today describing some of the events which led to its being built.

Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs

1998 ◽  
Author(s):  
Toshiyuki Oishi ◽  
Katsuomi Shiozawa ◽  
Akihiko Furukawa ◽  
Yuji Abe ◽  
Yasunori Tokuda
Keyword(s):  
Edge Effect ◽  
Short Channel ◽  
Channel Characteristics
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