Electrical characteristics of lateral organic bulk heterojunction device structures

2012 ◽  
Vol 13 (7) ◽  
pp. 1185-1191 ◽  
Author(s):  
Christopher Lombardo ◽  
Zi-En Ooi ◽  
Eric Danielson ◽  
Ananth Dodabalapur
Keyword(s):  
Bulk Heterojunction ◽  
Electrical Characteristics ◽  
Device Structures ◽  
Heterojunction Device

Electrochemical C-V profiling of heterojunction device structures

1989 ◽  
Vol 36 (2) ◽  
pp. 309-313 ◽  
Author(s):  
A.C. Seabaugh ◽  
W.R. Frensley ◽  
R.J. Matyi ◽  
G.E. Cabaniss
Keyword(s):  
Device Structures ◽  
Heterojunction Device

scholarly journals Development of polymer–fullerene solar cells

2016 ◽  
Vol 3 (2) ◽  
pp. 222-239 ◽  
Author(s):  
Fengling Zhang ◽  
Olle Inganäs ◽  
Yinhua Zhou ◽  
Koen Vandewal
Keyword(s):  
Solar Cells ◽  
Bulk Heterojunction ◽  
Polymer Solar Cells ◽  
Power Conversion ◽  
Free Charge Carrier ◽  
Interfacial Layers ◽  
New Device ◽  
Device Structures ◽  
Photoactive Materials ◽  
Conversion Efficiencies

Abstract Global efforts and synergetic interdisciplinary collaborations on solution-processed bulk-heterojunction polymer solar cells (PSCs or OPVs) made power conversion efficiencies over 10% possible. The rapid progress of the field is credited to the synthesis of a large number of novel polymers with specially tunable optoelectronic properties, a better control over the nano-morphology of photoactive blend layers, the introduction of various effective interfacial layers, new device architectures and a deeper understanding of device physics. We will review the pioneering materials for polymer–fullerene solar cells and trace the progress of concepts driving their development. We discuss the evolution of morphology control, interfacial layers and device structures fully exploring the potential of photoactive materials. In order to guide a further increase in power conversion efficiency of OPV, the current understanding of the process of free charge carrier generation and the origin of the photovoltage is summarized followed by a perspective on how to overcome the limitations for industrializing PSCs.

Evolution of SOI MOSFETs: from Single Gate to Multiple Gates

2003 ◽  
Vol 765 ◽  
Author(s):  
Jean-Pierre Colinge
Keyword(s):  
Current Drive ◽  
Electrical Characteristics ◽  
Short Channel ◽  
Channel Characteristics ◽  
Device Structures ◽  
History Of ◽  
Soi Technology

AbstractTo improve short-channel characteristics and increase current drive, SOI technology is shifting focus from “classical” single-gate MOSFET architectures to multiple-gate device structures. This paper traces the history of single- and multiple-gate SOI MOSFETs and summarizes the electrical characteristics of such devices.

Impact of Coumarin Dye Doping on Photovoltaic Properties of Bulk Heterojunction Device

2012 ◽  
Vol 51 ◽  
pp. 080207
Author(s):  
Kenichi Yamashita ◽  
Tomoki Watanabe ◽  
Tatsuya Maeda ◽  
Hisao Yanagi
Keyword(s):  
Bulk Heterojunction ◽  
Photovoltaic Properties ◽  
Heterojunction Device ◽  
Dye Doping ◽  
Coumarin Dye

Bulk heterojunction perovskite hybrid solar cells with large fill factor

2015 ◽  
Vol 8 (4) ◽  
pp. 1245-1255 ◽  
Author(s):  
Kai Wang ◽  
Chang Liu ◽  
Pengcheng Du ◽  
Jie Zheng ◽  
Xiong Gong
Keyword(s):  
Solar Cells ◽  
Charge Carrier ◽  
Fill Factor ◽  
Bulk Heterojunction ◽  
Hybrid Solar Cells ◽  
Device Structure ◽  
Heterojunction Device ◽  
Carrier Extraction

A bulk heterojunction device structure was developed to address the unbalanced charge carrier extraction efficiencies in perovskite hybrid solar cells.

scholarly journals Tunnelling in rare-earth nitride structures

2021 ◽  
Author(s):  
◽  
Jackson Miller
Keyword(s):  
Vapour Deposition ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Barrier Properties ◽  
Physical Vapour Deposition ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Device Structures ◽  
Zero Moment

<p>GdN thin film device structures, including magnetic tunnel junctions (MTJs), were grown by physical vapour deposition and their electrical properties were investigated. Growth compatibility between GdN and various contact metals (Al, Au, Gd and Nb) was assured using X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. I developed a photomask and lithographic process to isolate electrical behaviour perpendicular to the plane of the films. Al and Au were confirmed to make ohmic contact to GdN, while Gd and Nb both formed Schottky-like barriers at the interface with GdN. In MTJ structures, device electrical characteristics were dominated by tunnelling behaviour through the GaN barrier layer. The Simmons model was successfully applied to tunnelling measurements of Al/GdN/GaN/GdN/Gd structured MTJs to determine the barrier properties. MTJs grown with Al bottom contacts were grown with 1.5eV potential barrier height and 2.5 nm width. Finally, MTJs contacted with Nb exhibited a large magnetoresistance (> 500%), greater than GdN-based MTJs recorded in the literature [Warring et al. ”Magnetic Tunnel Junctions Incorporating a Near-Zero-Moment Ferromagnetic Semiconductor”, Phys. Rev. Appl., vol.6, p.044002, 2016].</p>

scholarly journals Tunnelling in rare-earth nitride structures

2021 ◽  
Author(s):  
◽  
Jackson Miller
Keyword(s):  
Vapour Deposition ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Barrier Properties ◽  
Physical Vapour Deposition ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Device Structures ◽  
Zero Moment

<p>GdN thin film device structures, including magnetic tunnel junctions (MTJs), were grown by physical vapour deposition and their electrical properties were investigated. Growth compatibility between GdN and various contact metals (Al, Au, Gd and Nb) was assured using X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. I developed a photomask and lithographic process to isolate electrical behaviour perpendicular to the plane of the films. Al and Au were confirmed to make ohmic contact to GdN, while Gd and Nb both formed Schottky-like barriers at the interface with GdN. In MTJ structures, device electrical characteristics were dominated by tunnelling behaviour through the GaN barrier layer. The Simmons model was successfully applied to tunnelling measurements of Al/GdN/GaN/GdN/Gd structured MTJs to determine the barrier properties. MTJs grown with Al bottom contacts were grown with 1.5eV potential barrier height and 2.5 nm width. Finally, MTJs contacted with Nb exhibited a large magnetoresistance (> 500%), greater than GdN-based MTJs recorded in the literature [Warring et al. ”Magnetic Tunnel Junctions Incorporating a Near-Zero-Moment Ferromagnetic Semiconductor”, Phys. Rev. Appl., vol.6, p.044002, 2016].</p>

Impact of Coumarin Dye Doping on Photovoltaic Properties of Bulk Heterojunction Device

2012 ◽  
Vol 51 (8R) ◽  
pp. 080207 ◽  
Author(s):  
Kenichi Yamashita ◽  
Tomoki Watanabe ◽  
Tatsuya Maeda ◽  
Hisao Yanagi
Keyword(s):  
Bulk Heterojunction ◽  
Photovoltaic Properties ◽  
Heterojunction Device ◽  
Dye Doping ◽  
Coumarin Dye

Contact-Free Determination of Scattering Times in Heterojunction Device Structures

1992 ◽  
Vol 281 ◽  
Author(s):  
P. Omling ◽  
H. Linke ◽  
P. Ramvall ◽  
B. K. Meyer
Keyword(s):  
High Speed ◽  
Measurement Techniques ◽  
Far Infrared ◽  
Device Structures ◽  
Far Infrared Lasers ◽  
Heterojunction Device ◽  
Shubnikov De Haas Oscillations ◽  
Optically Detected ◽  
Contact Free

ABSTRACTIn this paper we present contact-free measurement techniques which are important for the evaluation of heterojunctions of interest for optical as well as high-speed devices. The techniques are the microwave-detection of Shubnikov-de Haas oscillations, photoluminescence-detected magneto-oscillations, and optically detected cyclotron resonance using microwaves (ODCR) as well as far-infrared lasers (FIR-ODCR). The techniques are illustrated by several examples, and the possibilities to determine 2D carrier concentrations, effective masses, and scattering times in the heterojunction structures are discussed.

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