Mechanism of the Suppression of Zr Silicide Formation in Poly-Si/ZrON/ZrSiON/Si Structure

2002 ◽  
Vol 716 ◽  
Author(s):  
Masato Koyama ◽  
Kyoichi Suguro ◽  
Chie Hongo ◽  
Mitsuo Koike ◽  
Yuichi Kamimuta ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Interfacial Layer ◽  
Dominant Role ◽  
Silicide Formation ◽  
Nitrogen Incorporation ◽  
Thermal Stability Of

AbstractIn this paper, the mechanisms of the suppression of Zr-silicide formation in poly-Si/ZrON/interfacial-layer/Si structure at 1000°C annealing are discussed in detail. It was demonstrated that gaseous SiO desorption, which played a dominant role in the silicide formation in the case of the ZrO2/SiO2/Si, was completely inhibited in the ZrON/interfacial-layer/Si structure. In addition, we have found that an ultrathin interfacial SiON layer between poly-Si and ZrON stabilized the interface. Consequently, we concluded that the effective nitrogen incorporation into top/bottom interfacial SiON layers with our process was responsible for the superior thermal stability of the stack.

Characterization of Ni- and Ni(Pt)-Silicide Formation on Narrow Polycrystalline Si Lines by Raman Spectroscopy

1999 ◽  
Vol 591 ◽  
Author(s):  
P. S. Lee ◽  
D. Mangelinck ◽  
K. L. Pey ◽  
J. Ding ◽  
T. Osipowicz ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Raman Spectroscopy ◽  
Raman Mapping ◽  
Silicide Formation ◽  
Nucleation Sites ◽  
The Difference ◽  
The Stability ◽  
Non Destructive ◽  
Thermal Stability Of

ABSTRACTThe formation and thermal stability of Ni- and Ni(Pt) silicide on narrow polycrystalline Si (poly-Si) lines have been investigated using the non-destructive micro-Raman technique. The presence of Ni or Ni(Pt)Si on poly-Si lines with linewidths ranging from 0.5 gtm to 0.25 μm has been monitored by a distinct Raman peak at around 215 cm−1. Ni(Pt)Si was clearly identified to be present up to a RTA temperature of 900°C on narrow poly-Si lines as compared to pure NiSi which was found only up to 750°C. Raman scattering from the 100×100 μm2 poly-Si pads showed the formation of NiSi2 at 750°C for pure Ni-salicidation and 900°C for Ni(Pt)-salicidation respectively. The difference in the stability of NiSi on the poly-Si pads and lines is discussed in terms of agglomeration, inversion and/or nucleation of NiSi2that could be due to difference in nucleation sites and/or stress. In addition, a correlation between the line sheet resistance and the presence of Ni silicide was found using micro-Raman mapping along single poly-Si lines.

Thermal stability of sputtered copper films containing dilute insoluble tungsten: Thermal annealing study

2003 ◽  
Vol 18 (6) ◽  
pp. 1429-1434 ◽  
Author(s):  
C. H. Lin ◽  
J. P. Chu ◽  
T. Mahalingam ◽  
T. N. Lin ◽  
S. F. Wang
Keyword(s):  
Thermal Stability ◽  
Thermal Annealing ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Silicide Formation ◽  
Copper Silicide ◽  
Cu Films ◽  
Cu Film ◽  
Pure Cu ◽  
Thermal Stability Of

This paper describes studies on the thermal annealing behavior of Cu films with 2.3 at.% W deposited on Si substrates. The magnetron cosputtered Cu films with insoluble W were vacuum annealed at temperatures ranging from 200 to 800 °C. Twins were observed in focused ion beam and transmission electron microscopy images of as-deposited and 400 °C annealed pure Cu film, and these twins were attributed to the intrinsic low stacking fault energy. Twins in pure Cu film may provide an additional diffusion path during annealing for copper silicide formation. The beneficial effect of W on the thermal stability of Cu film was supported by the following observations: (i) x-ray diffraction studies show that Cu4Si was formed at 530 °C in Cu–W film, whereas pure Cu film exhibited Cu4Si growth at 400 °C; (ii) shallow diffusion profiles for Cu into Si in Cu–W film through secondary ion mass spectroscopy analyses, and the high activation energy needed for the copper silicide formation from the differential scanning calorimetry study; (iii) addition of W in Cu film increases the stacking fault energy and results in a low twin density.

Effect of nitrogen incorporation on the thermal stability of sputter deposited lanthanum aluminate dielectrics on Si (100)

2006 ◽  
Vol 89 (15) ◽  
pp. 152903 ◽  
Author(s):  
P. Sivasubramani ◽  
J. Kim ◽  
M. J. Kim ◽  
B. E. Gnade ◽  
R. M. Wallace
Keyword(s):  
Thermal Stability ◽  
Lanthanum Aluminate ◽  
Nitrogen Incorporation ◽  
Sputter Deposited ◽  
Thermal Stability Of

Enhanced thermal stability of Ti/TiO2/n-Ge contacts through plasma nitridation of TiO2 interfacial layer

2017 ◽  
Vol 110 (5) ◽  
pp. 052104 ◽  
Author(s):  
Dipankar Biswas ◽  
Jayeeta Biswas ◽  
Sayantan Ghosh ◽  
Bingxi Wood ◽  
Saurabh Lodha
Keyword(s):  
Thermal Stability ◽  
Interfacial Layer ◽  
Plasma Nitridation ◽  
Thermal Stability Of

Improvement in Thermal Stability of MOCVD HfO2 Films Using an ALD SiNx Interfacial Layer

2019 ◽  
Vol 1 (5) ◽  
pp. 393-397 ◽  
Author(s):  
Hyuck J. Jang ◽  
Sug H. Hong ◽  
Taejoo Park ◽  
J.H. Heo ◽  
Sang Ryol Yang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Interfacial Layer ◽  
Thermal Stability Of

Silicide Formation and Thermal Stability of Ni/Si/GaAs Interface

1989 ◽  
Vol 160 ◽  
Author(s):  
Y. Yamamoto ◽  
K. Ishibashi ◽  
S. Suzuki ◽  
T.E. Shim
Keyword(s):  
Thermal Stability ◽  
Silicide Formation ◽  
Thermal Stability Of

AbstractThe suicide formation and thermal stability of the Ni/Si/GaAs structures have been investigated. Vacuum deposited Ni and Si onto a (100) GaAs were annealed at temperatures between 500 °C and 650 °C. In the case that the relative amount of Ni and Si was unity, a stoichiometric NiSi was formed and silicide/GaAs interface was quite stable. The Stoichiometric NiSi did not decompose into NiSi2 and Ni at a temperature of 650 °C. When Ni was in excess in amount for the formation of stoichiometric nickel suicides, free Ni atoms were generated, resulting in unstable interfaces.

Sign in / Sign up

Export Citation Format

Share Document