Increased thermal stability of Au/GaAs metal‐insulator‐semiconductor Schottky diodes with silicon nitride interfacial layer deposited by remote plasma‐enhanced chemical vapor deposition

1993 ◽  
Vol 73 (10) ◽  
pp. 5075-5080 ◽  
Author(s):  
J. Kolník ◽  
J. Ivančo ◽  
M. Ožvold ◽  
F. Wyczisk ◽  
J. Olivier
Keyword(s):  
Thermal Stability ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Interfacial Layer ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Metal Insulator ◽  
Thermal Stability Of

The thermal stability of SiGe films deposited by ultrahigh‐vacuum chemical vapor deposition

1991 ◽  
Vol 70 (3) ◽  
pp. 1416-1420 ◽  
Author(s):  
S. R. Stiffler ◽  
J. H. Comfort ◽  
C. L. Stanis ◽  
D. L. Harame ◽  
E. de Frésart ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Thermal Stability Of

Quasi-Stoichiometric Silicon Nitride Thin Films Deposited by Remote Plasma-Enhanced Chemical-Vapor Deposition

1992 ◽  
Vol 284 ◽  
Author(s):  
G. Lucovsky ◽  
Y. Ma ◽  
S. S. He ◽  
T. Yasuda ◽  
D. J. Stephens ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Electrical Performance ◽  
Remote Plasma ◽  
Silicon Nitride Films ◽  
On Line

ABSTRACTConditions for depositing quasi-stoichiometric silicon nitride films by low-temperature, remote plasma-enhanced chemical-vapor deposition, RPECVD, have been identified using on-line Auger electron spectroscopy, AES, and off-line optical and infrared, IR, spectroscopies. Quasi-stoichiometric films, by the definition propose in this paper, do not display spectroscopic evidence for Si-Si bonds, but contain bonded-H in Si-H and Si-NH arrangements. Incorporation of RPECVD nitrides into transistor devices has demonstrated that electrical performance is optimized when the films are quasi-stoichiometric with relatively low Si-NH concentrations.

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