Silicide Formation and Thermal Stability of Ni/Si/GaAs Interface

1989 ◽  
Vol 160 ◽  
Author(s):  
Y. Yamamoto ◽  
K. Ishibashi ◽  
S. Suzuki ◽  
T.E. Shim
Keyword(s):  
Thermal Stability ◽  
Silicide Formation ◽  
Thermal Stability Of

AbstractThe suicide formation and thermal stability of the Ni/Si/GaAs structures have been investigated. Vacuum deposited Ni and Si onto a (100) GaAs were annealed at temperatures between 500 °C and 650 °C. In the case that the relative amount of Ni and Si was unity, a stoichiometric NiSi was formed and silicide/GaAs interface was quite stable. The Stoichiometric NiSi did not decompose into NiSi2 and Ni at a temperature of 650 °C. When Ni was in excess in amount for the formation of stoichiometric nickel suicides, free Ni atoms were generated, resulting in unstable interfaces.

Characterization of Ni- and Ni(Pt)-Silicide Formation on Narrow Polycrystalline Si Lines by Raman Spectroscopy

1999 ◽  
Vol 591 ◽  
Author(s):  
P. S. Lee ◽  
D. Mangelinck ◽  
K. L. Pey ◽  
J. Ding ◽  
T. Osipowicz ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Raman Spectroscopy ◽  
Raman Mapping ◽  
Silicide Formation ◽  
Nucleation Sites ◽  
The Difference ◽  
The Stability ◽  
Non Destructive ◽  
Thermal Stability Of

ABSTRACTThe formation and thermal stability of Ni- and Ni(Pt) silicide on narrow polycrystalline Si (poly-Si) lines have been investigated using the non-destructive micro-Raman technique. The presence of Ni or Ni(Pt)Si on poly-Si lines with linewidths ranging from 0.5 gtm to 0.25 μm has been monitored by a distinct Raman peak at around 215 cm−1. Ni(Pt)Si was clearly identified to be present up to a RTA temperature of 900°C on narrow poly-Si lines as compared to pure NiSi which was found only up to 750°C. Raman scattering from the 100×100 μm2 poly-Si pads showed the formation of NiSi2 at 750°C for pure Ni-salicidation and 900°C for Ni(Pt)-salicidation respectively. The difference in the stability of NiSi on the poly-Si pads and lines is discussed in terms of agglomeration, inversion and/or nucleation of NiSi2that could be due to difference in nucleation sites and/or stress. In addition, a correlation between the line sheet resistance and the presence of Ni silicide was found using micro-Raman mapping along single poly-Si lines.

Thermal stability of sputtered copper films containing dilute insoluble tungsten: Thermal annealing study

2003 ◽  
Vol 18 (6) ◽  
pp. 1429-1434 ◽  
Author(s):  
C. H. Lin ◽  
J. P. Chu ◽  
T. Mahalingam ◽  
T. N. Lin ◽  
S. F. Wang
Keyword(s):  
Thermal Stability ◽  
Thermal Annealing ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Silicide Formation ◽  
Copper Silicide ◽  
Cu Films ◽  
Cu Film ◽  
Pure Cu ◽  
Thermal Stability Of

This paper describes studies on the thermal annealing behavior of Cu films with 2.3 at.% W deposited on Si substrates. The magnetron cosputtered Cu films with insoluble W were vacuum annealed at temperatures ranging from 200 to 800 °C. Twins were observed in focused ion beam and transmission electron microscopy images of as-deposited and 400 °C annealed pure Cu film, and these twins were attributed to the intrinsic low stacking fault energy. Twins in pure Cu film may provide an additional diffusion path during annealing for copper silicide formation. The beneficial effect of W on the thermal stability of Cu film was supported by the following observations: (i) x-ray diffraction studies show that Cu4Si was formed at 530 °C in Cu–W film, whereas pure Cu film exhibited Cu4Si growth at 400 °C; (ii) shallow diffusion profiles for Cu into Si in Cu–W film through secondary ion mass spectroscopy analyses, and the high activation energy needed for the copper silicide formation from the differential scanning calorimetry study; (iii) addition of W in Cu film increases the stacking fault energy and results in a low twin density.

Mechanism of the Suppression of Zr Silicide Formation in Poly-Si/ZrON/ZrSiON/Si Structure

2002 ◽  
Vol 716 ◽  
Author(s):  
Masato Koyama ◽  
Kyoichi Suguro ◽  
Chie Hongo ◽  
Mitsuo Koike ◽  
Yuichi Kamimuta ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Interfacial Layer ◽  
Dominant Role ◽  
Silicide Formation ◽  
Nitrogen Incorporation ◽  
Thermal Stability Of

AbstractIn this paper, the mechanisms of the suppression of Zr-silicide formation in poly-Si/ZrON/interfacial-layer/Si structure at 1000°C annealing are discussed in detail. It was demonstrated that gaseous SiO desorption, which played a dominant role in the silicide formation in the case of the ZrO2/SiO2/Si, was completely inhibited in the ZrON/interfacial-layer/Si structure. In addition, we have found that an ultrathin interfacial SiON layer between poly-Si and ZrON stabilized the interface. Consequently, we concluded that the effective nitrogen incorporation into top/bottom interfacial SiON layers with our process was responsible for the superior thermal stability of the stack.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Practical criteria for the thermal stability of a unidimensional superconductor

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Time and thermal stability of magnetic properties of amorphous Fe80TM3B17 alloys

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas
Keyword(s):  
Thermal Stability ◽  
Magnetic Properties ◽  
Thermal Stability Of

Thermal stability of organic-inorganic nanocomposites based on system of dimethacrylate-tetraethoxysilane and their kinetic features

2016 ◽  
Vol 38 (3) ◽  
pp. 211-217
Author(s):  
G.I. Khovanets’ ◽  
◽  
O.Y. Makido ◽  
V.V. Kochubey ◽  
Y.G. Medvedevskikh ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Inorganic Nanocomposites ◽  
Thermal Stability Of ◽  
Kinetic Features
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