Improvement in Thermal Stability of MOCVD HfO2 Films Using an ALD SiNx Interfacial Layer

2005 ◽  
Keyword(s):  
Thermal Stability ◽  
Interfacial Layer ◽  
Thermal Stability Of

Mechanism of the Suppression of Zr Silicide Formation in Poly-Si/ZrON/ZrSiON/Si Structure

2002 ◽  
Vol 716 ◽  
Author(s):  
Masato Koyama ◽  
Kyoichi Suguro ◽  
Chie Hongo ◽  
Mitsuo Koike ◽  
Yuichi Kamimuta ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Interfacial Layer ◽  
Dominant Role ◽  
Silicide Formation ◽  
Nitrogen Incorporation ◽  
Thermal Stability Of

AbstractIn this paper, the mechanisms of the suppression of Zr-silicide formation in poly-Si/ZrON/interfacial-layer/Si structure at 1000°C annealing are discussed in detail. It was demonstrated that gaseous SiO desorption, which played a dominant role in the silicide formation in the case of the ZrO2/SiO2/Si, was completely inhibited in the ZrON/interfacial-layer/Si structure. In addition, we have found that an ultrathin interfacial SiON layer between poly-Si and ZrON stabilized the interface. Consequently, we concluded that the effective nitrogen incorporation into top/bottom interfacial SiON layers with our process was responsible for the superior thermal stability of the stack.

Enhanced thermal stability of Ti/TiO2/n-Ge contacts through plasma nitridation of TiO2 interfacial layer

2017 ◽  
Vol 110 (5) ◽  
pp. 052104 ◽  
Author(s):  
Dipankar Biswas ◽  
Jayeeta Biswas ◽  
Sayantan Ghosh ◽  
Bingxi Wood ◽  
Saurabh Lodha
Keyword(s):  
Thermal Stability ◽  
Interfacial Layer ◽  
Plasma Nitridation ◽  
Thermal Stability Of

Improvement in Thermal Stability of MOCVD HfO2 Films Using an ALD SiNx Interfacial Layer

2019 ◽  
Vol 1 (5) ◽  
pp. 393-397 ◽  
Author(s):  
Hyuck J. Jang ◽  
Sug H. Hong ◽  
Taejoo Park ◽  
J.H. Heo ◽  
Sang Ryol Yang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Interfacial Layer ◽  
Thermal Stability Of

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of
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