Improvement in thermal stability of the interfacial layer for poly Si/HfAlOx gate stacks

Author(s):  
R. Mitsuhashi ◽  
A. Horiuchi ◽  
A. Uedono ◽  
K. Torii
2019 ◽  
Vol 3 (2) ◽  
pp. 185-190
Author(s):  
Alessandro Callegari ◽  
Michael Gribelyuk ◽  
Andrew Kellock

2002 ◽  
Vol 716 ◽  
Author(s):  
Masato Koyama ◽  
Kyoichi Suguro ◽  
Chie Hongo ◽  
Mitsuo Koike ◽  
Yuichi Kamimuta ◽  
...  

AbstractIn this paper, the mechanisms of the suppression of Zr-silicide formation in poly-Si/ZrON/interfacial-layer/Si structure at 1000°C annealing are discussed in detail. It was demonstrated that gaseous SiO desorption, which played a dominant role in the silicide formation in the case of the ZrO2/SiO2/Si, was completely inhibited in the ZrON/interfacial-layer/Si structure. In addition, we have found that an ultrathin interfacial SiON layer between poly-Si and ZrON stabilized the interface. Consequently, we concluded that the effective nitrogen incorporation into top/bottom interfacial SiON layers with our process was responsible for the superior thermal stability of the stack.


2008 ◽  
Vol 52 (10) ◽  
pp. 1512-1517 ◽  
Author(s):  
Chung-Hao Fu ◽  
Po-Yen Chien ◽  
Kuei-Shu Chang-Liao ◽  
Tien-Ko Wang ◽  
Wen-Fa Wu

Vacuum ◽  
2007 ◽  
Vol 81 (10) ◽  
pp. 1379-1384 ◽  
Author(s):  
D. Machajdík ◽  
A.P. Kobzev ◽  
K. Hušeková ◽  
M. Ťapajna ◽  
K. Fro˝hlich ◽  
...  

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