Effect of Substrate Surface Structure and Deposition Conditions on the Microstructure of Tin Dioxide Thin Films Synthesized by Femtosecond Pulsed Laser Deposition

2000 ◽  
Vol 654 ◽  
Author(s):  
J. E. Dominguez ◽  
L. Fu ◽  
P. A. Van Rompay ◽  
Z. Y. Zhang ◽  
J. A. Nees ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Room Temperature ◽  
Tin Dioxide ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Transmission Electron ◽  
Deposition Conditions ◽  
Femtosecond Pulsed Laser

AbstractTin oxide films were deposited on sapphire and silicon substrates using reactive femtosecond pulsed laser deposition at temperatures ranging from room temperature to 700°C. The effect of electrical discharge and background oxygen pressure on the thin film microstructure was studied. The microstructure of the films was characterized by transmission electron microscopy and x-ray diffraction. SnO2 films fabricated consist of different textures in microstructures that depend on the deposition conditions and substrate surface structures. For instance, films deposited on the (1012) sapphire (R-cut) are amorphous if deposited at room temperature, whereas films deposited at 700°C were epitaxial, single crystalline. Discharge and oxygen pressure had a strong effect on the ion/neutral ratio of the ablated plasma plume of SnO2.

Room Temperature Growth of Indium Tin Oxide Films By Ultraviolet-Assisted Pulsed Laser Deposition

2000 ◽  
Vol 617 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
Z. Chen ◽  
J. Hwang ◽  
R.K. Singh
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Optical Transmittance ◽  
Laser Deposition ◽  
High Resistivity ◽  
Ito Films

AbstractThe characteristics of indium tin oxide (ITO) films grown at room temperature on (100) Si and Coming glass substrates by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique have been investigated. The most important parameter, which influenced the optical and electrical properties of the grown films, was the oxygen pressure. For oxygen pressure below 1 mtorr, films were metallic, with very low optical transmittance and rather high resistivity values. The resistivity value decreased when using higher oxygen pressures while the optical transmittance increased. The optimum oxygen pressure was found to be around 10 mtorr. For higher oxygen pressures, the optical transmittance was better but a rapid degradation of the electrical conductivity was noticed. X-ray photoelectron spectroscopy investigations showed that ITO films grown at 10 mtorr oxygen are fully oxidized. All of the grown films were amorphous regardless of the oxygen pressure used.

scholarly journals Influence of deposition conditions on self-assembled growth of Pb(Zr,Ti)O3 nanorods by pulsed laser deposition at elevated oxygen pressure

2018 ◽  
Vol 126 (5) ◽  
pp. 276-280 ◽  
Author(s):  
Kazuki OKAMOTO ◽  
Tomoaki YAMADA ◽  
Jun YASUMOTO ◽  
Kentaro NAKAMURA ◽  
Masahito YOSHINO ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Self Assembled ◽  
Deposition Conditions

Structure-Property Relationships of Tin Dioxide Thin Films Grown on Sapphire Substrates by Femtosecond Pulsed Laser Deposition

2000 ◽  
Vol 654 ◽  
Author(s):  
J. E. Dominguez ◽  
L. Fu ◽  
X. Q. Pan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Tin Dioxide ◽  
Pulsed Laser ◽  
Crystal Defects ◽  
Laser Deposition ◽  
Sapphire Substrates ◽  
Reducing Gases ◽  
Femtosecond Pulsed Laser

AbstractThe sensitivity of semiconductive tin dioxide (SnO2) to reducing gases is determinedby the electrical conductivity change in the material. This change in conductivity strongly dependson the thickness of the electron depletion layer near the oxide film surface. In this paper we study the effect of crystal defects and interfaces on the electrical properties and the gas sensing performance of SnO2 thin films. SnO2 thin films with the thickness varying from 15 nm to 100 nm were deposited on sapphire substrates with different surface crystallographic orientations by femtosecond pulsed laser deposition. Films grown on the (1012) sapphire (R-cut) are epitaxial, single crystal. High resolution transmission electron microscopy studies showed the existence of a large number of crystal defects including crystallographic shear planes and misfit dislocations at the film/substrate interface. Films grown on the (0001) sapphire substrates (Ccut) are nanocrystalline with (200) texture. The gas sensitivity of the films was measuredin a gas reactor at high temperature. It was found that the sensitivity to reducing gases increases with decreasing film thickness. Electrical transport properties of the SnO2 thin films were investigated byHall effect measurements. Models correlating the microstructures of thin films to electrical properties are proposed.

Room Temperature Growth of Indium Tin Oxide Films by Ultraviolet-Assisted Pulsed Laser Deposition

2000 ◽  
Vol 623 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
Z. Chen ◽  
J. Hwang ◽  
R.K. Singh
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Optical Transmittance ◽  
Laser Deposition ◽  
High Resistivity ◽  
Ito Films

AbstractThe characteristics of indium tin oxide (ITO) films grown at room temperature on (100) Si and Corning glass substrates by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique have been investigated. The most important parameter, which influenced the optical and electrical properties of the grown films, was the oxygen pressure. For oxygen pressure below 1 mtorr, films were metallic, with very low optical transmittance and rather high resistivity values. The resistivity value decreased when using higher oxygen pressures while the optical transmittance increased. The optimum oxygen pressure was found to be around 10 mtorr. For higher oxygen pressures, the optical transmittance was better but a rapid degradation of the electrical conductivity was noticed. X-ray photoelectron spectroscopy investigations showed that ITO films grown at 10 mtorr oxygen are fully oxidized. All of the grown films were amorphous regardless of the oxygen pressure used.

Improvement of Retention Property of YMnO3/Y2O3/Si MFIS Capacitor

2000 ◽  
Vol 655 ◽  
Author(s):  
Norifumi Fujimura Daisuke Ito ◽  
Kousuke Kakuno ◽  
Taichiro Ito
Keyword(s):  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Oxygen Pressure ◽  
Laser Power ◽  
Remanent Polarization ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Conditions

AbstractWe have been proposing YMnO3 with low remanent polarization and permittivity as a ferroelectric gate transistor, and reported that c-oriented YMnO3 films were obtained on (111)Si with (111) oriented Y2O3 buffer layer. The ferroelectricity was confirmed by pulsed C-V measurement. However, the retention property was not satisfied because of its poor crystallinity. To improve the crystallinity of YMnO3 films, deposition conditions of Pulsed Laser Deposition (PLD) were optimized. The laser power, oxygen pressure and introducing Ozone gas are effective for maintaining the stoichiometry during the deposition. Improvement of the crystallinity of the YMnO3 film makes the retention property better. We also demonstrate the use of epitaxially grown Y2O3 buffer layer to improve the crystallinity of the YMnO3 films.

Epitaxial Growth of (Na,K)NbO3 Films by Pulsed Laser Deposition

2013 ◽  
Vol 1494 ◽  
pp. 227-232
Author(s):  
K. Sakurai ◽  
T. Hanawa ◽  
N. Kikuchi ◽  
K. Nishio ◽  
K. Tonooka ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Piezoelectric Materials ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Lattice Constants ◽  
Crystalline Films ◽  
The Difference

ABSTRACT(Na,K)NbO3 is a promising candidate for lead-free piezoelectric materials. (Na1-xKx)NbO3 films (x = 0.3–0.7) were epitaxially grown on a (100)SrTiO3 substrate via pulsed laser deposition. The effects of substrate temperature and oxygen pressure during deposition on the crystallinity of the films were examined: both parameters affected the mosaic spread of the crystallites and the formation of an impurity phase. In this study, the optimum conditions for the preparation of highly crystalline films were a substrate temperature of 800 °C and oxygen pressure of ∼60 Pa. The lattice constants parallel and perpendicular to the substrate surface responded differently to changes in x: the constant parallel to the surface increased with increasing x, while the constant perpendicular to the surface was maximized at x = 0.5. The difference in the dependence of the lattice constants could be explained by the elastic distortion of the lattice.

Phase Composition and Microstructure as a Function of Deposition Conditions for Potassium Tantalate Niobate Thin Films Grown by Pulsed Laser Deposition

1992 ◽  
Vol 285 ◽  
Author(s):  
C.M. Cotell ◽  
R.E. Leuchtner
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Columnar Microstructure ◽  
Potassium Tantalate ◽  
Potassium Tantalate Niobate ◽  
Ambient Oxygen ◽  
Backscattering Analysis ◽  
Deposition Conditions

ABSTRACTPotassium tantalate niobate [K(Ta1−xNbx)O3 or KTNJ films were deposited by pulsed laser deposition (PLD) on (100)MgO substrates from targets of KTN with x=0.45. The effects of substrate temperature (300–700°C) and ambient oxygen pressure (50 and 300 mTorr) on the characteristics of films were investigated. At 500°C and 300 mTorr, films were amorphous with a few isolated, randomly-oriented crystalline grains of perovskite and pyrochlore. At 600°C and 300 mTorr, the films comprised a columnar microstructure consisting of a mixture of amorphous phase with (100) perovskite. At 650°C, films were almost entirely (100) perovskite. At 700°C, the films were predominantly (100) perovskite, but contained a much higher fraction of pyrochlore. At 50 mTorr, pyrochlore was found in significant fractions up to 650°C. At 700°C, films were predominantly (100) perovskite. Rutherford Backscattering analysis of the chemical composition showed that all the films were potassium-deficient and the tantalum to niobimn ratio exceeded that found in the targets for all deposition conditions. There appeared to be a relationship between oxygen pressure during deposition and the amount of potassium retained in the films.

scholarly journals Annealing Condition Effects on the Structural Properties of FePt Nanoparticles Embedded in MgO via Pulsed Laser Deposition

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 131
Author(s):  
Tingting Xiao ◽  
Qi Yang ◽  
Jian Yu ◽  
Zhengwei Xiong ◽  
Weidong Wu
Keyword(s):  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Annealing Process ◽  
Ultra High Vacuum ◽  
Laser Deposition ◽  
Fept Nanoparticles ◽  
Annealing Conditions ◽  
Vacuum Atmosphere

FePt nanoparticles (NPs) were embedded into a single-crystal MgO host by pulsed laser deposition (PLD). It was found that its phase, microstructures and physical properties were strongly dependent on annealing conditions. Annealing induced a remarkable morphology variation in order to decrease its total free energy. H2/Ar (95% Ar + 5% H2) significantly improved the L10 ordering of FePt NPs, making magnetic coercivity reach 37 KOe at room temperature. However, the samples annealing at H2/Ar, O2, and vacuum all showed the presence of iron oxide even with the coverage of MgO. MgO matrix could restrain the particles’ coalescence effectively but can hardly avoid the oxidation of Fe since it is extremely sensitive to oxygen under the high-temperature annealing process. This study demonstrated that it is essential to anneal FePt in a high-purity reducing or ultra-high vacuum atmosphere in order to eliminate the influence of oxygen.

Sign in / Sign up

Export Citation Format

Share Document