Oxygen pressure induced the electrical properties of amorphous LaAlO3 dielectric deposited by pulsed laser deposition at room temperature

2015 ◽  
Author(s):  
Suhendro Purbo Prakoso ◽  
Wen-Sheng Feng ◽  
Kou-Chen Liu
Keyword(s):  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition

Influence of oxygen pressure on the electrical properties of Mn-doped Bi0.5Na0.5TiO3BaTiO3 thin films by pulsed laser deposition

2019 ◽  
Vol 45 (10) ◽  
pp. 13518-13522 ◽  
Author(s):  
Shan Jiao ◽  
Yi Zhang ◽  
Zhihua Duan ◽  
Tao Wang ◽  
Yanxue Tang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Mn Doped

Room Temperature Growth of Indium Tin Oxide Films By Ultraviolet-Assisted Pulsed Laser Deposition

2000 ◽  
Vol 617 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
Z. Chen ◽  
J. Hwang ◽  
R.K. Singh
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Optical Transmittance ◽  
Laser Deposition ◽  
High Resistivity ◽  
Ito Films

AbstractThe characteristics of indium tin oxide (ITO) films grown at room temperature on (100) Si and Coming glass substrates by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique have been investigated. The most important parameter, which influenced the optical and electrical properties of the grown films, was the oxygen pressure. For oxygen pressure below 1 mtorr, films were metallic, with very low optical transmittance and rather high resistivity values. The resistivity value decreased when using higher oxygen pressures while the optical transmittance increased. The optimum oxygen pressure was found to be around 10 mtorr. For higher oxygen pressures, the optical transmittance was better but a rapid degradation of the electrical conductivity was noticed. X-ray photoelectron spectroscopy investigations showed that ITO films grown at 10 mtorr oxygen are fully oxidized. All of the grown films were amorphous regardless of the oxygen pressure used.

Room Temperature Growth of Indium Tin Oxide Films by Ultraviolet-Assisted Pulsed Laser Deposition

2000 ◽  
Vol 623 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
Z. Chen ◽  
J. Hwang ◽  
R.K. Singh
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Optical Transmittance ◽  
Laser Deposition ◽  
High Resistivity ◽  
Ito Films

AbstractThe characteristics of indium tin oxide (ITO) films grown at room temperature on (100) Si and Corning glass substrates by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique have been investigated. The most important parameter, which influenced the optical and electrical properties of the grown films, was the oxygen pressure. For oxygen pressure below 1 mtorr, films were metallic, with very low optical transmittance and rather high resistivity values. The resistivity value decreased when using higher oxygen pressures while the optical transmittance increased. The optimum oxygen pressure was found to be around 10 mtorr. For higher oxygen pressures, the optical transmittance was better but a rapid degradation of the electrical conductivity was noticed. X-ray photoelectron spectroscopy investigations showed that ITO films grown at 10 mtorr oxygen are fully oxidized. All of the grown films were amorphous regardless of the oxygen pressure used.

scholarly journals Tuning electrical properties of hierarchically assembled Al-doped ZnO nanoforests by room temperature Pulsed Laser Deposition

2015 ◽  
Vol 594 ◽  
pp. 12-17 ◽  
Author(s):  
P. Gondoni ◽  
P. Mazzolini ◽  
V. Russo ◽  
M. Diani ◽  
M. Amati ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Doped Zno
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