Room Temperature Growth of Indium Tin Oxide Films by Ultraviolet-Assisted Pulsed Laser Deposition

2000 ◽  
Vol 623 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
Z. Chen ◽  
J. Hwang ◽  
R.K. Singh
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Optical Transmittance ◽  
Laser Deposition ◽  
High Resistivity ◽  
Ito Films

AbstractThe characteristics of indium tin oxide (ITO) films grown at room temperature on (100) Si and Corning glass substrates by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique have been investigated. The most important parameter, which influenced the optical and electrical properties of the grown films, was the oxygen pressure. For oxygen pressure below 1 mtorr, films were metallic, with very low optical transmittance and rather high resistivity values. The resistivity value decreased when using higher oxygen pressures while the optical transmittance increased. The optimum oxygen pressure was found to be around 10 mtorr. For higher oxygen pressures, the optical transmittance was better but a rapid degradation of the electrical conductivity was noticed. X-ray photoelectron spectroscopy investigations showed that ITO films grown at 10 mtorr oxygen are fully oxidized. All of the grown films were amorphous regardless of the oxygen pressure used.

Room Temperature Growth of Indium Tin Oxide Films By Ultraviolet-Assisted Pulsed Laser Deposition

2000 ◽  
Vol 617 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
Z. Chen ◽  
J. Hwang ◽  
R.K. Singh
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Optical Transmittance ◽  
Laser Deposition ◽  
High Resistivity ◽  
Ito Films

AbstractThe characteristics of indium tin oxide (ITO) films grown at room temperature on (100) Si and Coming glass substrates by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique have been investigated. The most important parameter, which influenced the optical and electrical properties of the grown films, was the oxygen pressure. For oxygen pressure below 1 mtorr, films were metallic, with very low optical transmittance and rather high resistivity values. The resistivity value decreased when using higher oxygen pressures while the optical transmittance increased. The optimum oxygen pressure was found to be around 10 mtorr. For higher oxygen pressures, the optical transmittance was better but a rapid degradation of the electrical conductivity was noticed. X-ray photoelectron spectroscopy investigations showed that ITO films grown at 10 mtorr oxygen are fully oxidized. All of the grown films were amorphous regardless of the oxygen pressure used.

Pulsed Laser Deposition of Crystalline Indium Tin Oxide Films at Room Temperature by Substrate Laser Irradiation

2000 ◽  
Vol 39 (Part 2, No. 4B) ◽  
pp. L377-L379 ◽  
Author(s):  
Frederick O. Adurodija ◽  
Hirokazu Izumi ◽  
Tsuguo Ishihara ◽  
Hideki Yoshioka ◽  
Muneyuki Motoyama ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Laser Irradiation ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Tin Oxide Films

scholarly journals Pulsed Laser Deposition of Indium Tin Oxide Thin Films on Nanopatterned Glass Substrates

Coatings ◽  
2018 ◽  
Vol 9 (1) ◽  
pp. 19 ◽  
Author(s):  
Marcela Socol ◽  
Nicoleta Preda ◽  
Oana Rasoga ◽  
Andreea Costas ◽  
Anca Stanculescu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Nanoimprint Lithography ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Periodic Patterns ◽  
Glass Substrates ◽  
Ito Films

Indium tin oxide (ITO) thin films were grown on nanopatterned glass substrates by the pulsed laser deposition (PLD) technique. The deposition was carried out at 1.2 J/cm2 laser fluence, low oxygen pressure (1.5 Pa) and on unheated substrate. Arrays of periodic pillars with widths of ~350 nm, heights of ~250 nm, and separation pitches of ~1100 nm were fabricated on glass substrates using UV nanoimprint lithography (UV-NIL), a simple, cost-effective, and high throughput technique used to fabricate nanopatterns on large areas. In order to emphasize the influence of the periodic patterns on the properties of the nanostructured ITO films, this transparent conductive oxide (TCO) was also grown on flat glass substrates. Therefore, the structural, compositional, morphological, optical, and electrical properties of both non-patterned and patterned ITO films were investigated in a comparative manner. The energy dispersive X-ray analysis (EDX) confirms that the ITO films preserve the In2O3:SnO2 weight ratio from the solid ITO target. The SEM and atomic force microscopy (AFM) images prove that the deposited ITO films retain the pattern of the glass substrates. The optical investigations reveal that patterned ITO films present a good optical transmittance. The electrical measurements show that both the non-patterned and patterned ITO films are characterized by a low electrical resistivity (<2.8 × 10−4). However, an improvement in the Hall mobility was achieved in the case of the nanopatterned ITO films, evidencing the potential applications of such nanopatterned TCO films obtained by PLD in photovoltaic and light emitting devices.

Ultra Thin Indium Tin Oxide Films On Various Substrates By Pulsed Laser Deposition

1997 ◽  
Vol 485 ◽  
Author(s):  
X. W. Sun ◽  
D. H. Kim ◽  
H. S. Kwok
Keyword(s):  
Pulsed Laser Deposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Pulsed Laser ◽  
Good Alternative ◽  
Laser Deposition ◽  
Rocking Curve ◽  
X Ray ◽  
Bare Glass ◽  
Ito Films

AbstractIndium Tin Oxide (ITO) thin films with low resistivities of 0.1 ∼0.2 mΩ-cm were deposited on various substrates such as YSZ, glass, and ZnO buffered glass by pulsed laser deposition (PLD). The X-ray rocking curve of crystalline (200) ITO films grown on (100) YSZ had a FWHM as narrow as 0.08°. ITO films grown on ZnO (0001) buffered glass had an single (222) orientation and the X-ray rocking curve had a FWHM of 2. 1°. Ultrathin ITO films of 3.6nm were fabricated on YSZ and their electrical properties were measured from 10K-300K. ITO films fabricated on ZnO buffered glass and bare glass were characterized by Hall effect measurements as a function of temperature. The results indicate that the resistivity of ITO films grown by PLD does not depend on the orientation or the structure of the thin film. The resistivity is dominated by impurity scattering in the range of 10K-300K. We show that ZnO/glass is a good alternative to bare glass for producing commercial ITO films.

Effect of laser irradiation on the properties of indium tin oxide films deposited at room temperature by pulsed laser deposition

Vacuum ◽  
2002 ◽  
Vol 67 (2) ◽  
pp. 209-216 ◽  
Author(s):  
F.O Adurodija ◽  
H Izumi ◽  
T Ishihara ◽  
H Yoshioka ◽  
M Motoyama ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Laser Irradiation ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Tin Oxide Films
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