scholarly journals Influence of deposition conditions on self-assembled growth of Pb(Zr,Ti)O3 nanorods by pulsed laser deposition at elevated oxygen pressure

2018 ◽  
Vol 126 (5) ◽  
pp. 276-280 ◽  
Author(s):  
Kazuki OKAMOTO ◽  
Tomoaki YAMADA ◽  
Jun YASUMOTO ◽  
Kentaro NAKAMURA ◽  
Masahito YOSHINO ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Self Assembled ◽  
Deposition Conditions

Improvement of Retention Property of YMnO3/Y2O3/Si MFIS Capacitor

2000 ◽  
Vol 655 ◽  
Author(s):  
Norifumi Fujimura Daisuke Ito ◽  
Kousuke Kakuno ◽  
Taichiro Ito
Keyword(s):  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Oxygen Pressure ◽  
Laser Power ◽  
Remanent Polarization ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Conditions

AbstractWe have been proposing YMnO3 with low remanent polarization and permittivity as a ferroelectric gate transistor, and reported that c-oriented YMnO3 films were obtained on (111)Si with (111) oriented Y2O3 buffer layer. The ferroelectricity was confirmed by pulsed C-V measurement. However, the retention property was not satisfied because of its poor crystallinity. To improve the crystallinity of YMnO3 films, deposition conditions of Pulsed Laser Deposition (PLD) were optimized. The laser power, oxygen pressure and introducing Ozone gas are effective for maintaining the stoichiometry during the deposition. Improvement of the crystallinity of the YMnO3 film makes the retention property better. We also demonstrate the use of epitaxially grown Y2O3 buffer layer to improve the crystallinity of the YMnO3 films.

Effect of Substrate Surface Structure and Deposition Conditions on the Microstructure of Tin Dioxide Thin Films Synthesized by Femtosecond Pulsed Laser Deposition

2000 ◽  
Vol 654 ◽  
Author(s):  
J. E. Dominguez ◽  
L. Fu ◽  
P. A. Van Rompay ◽  
Z. Y. Zhang ◽  
J. A. Nees ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Room Temperature ◽  
Tin Dioxide ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Transmission Electron ◽  
Deposition Conditions ◽  
Femtosecond Pulsed Laser

AbstractTin oxide films were deposited on sapphire and silicon substrates using reactive femtosecond pulsed laser deposition at temperatures ranging from room temperature to 700°C. The effect of electrical discharge and background oxygen pressure on the thin film microstructure was studied. The microstructure of the films was characterized by transmission electron microscopy and x-ray diffraction. SnO2 films fabricated consist of different textures in microstructures that depend on the deposition conditions and substrate surface structures. For instance, films deposited on the (1012) sapphire (R-cut) are amorphous if deposited at room temperature, whereas films deposited at 700°C were epitaxial, single crystalline. Discharge and oxygen pressure had a strong effect on the ion/neutral ratio of the ablated plasma plume of SnO2.

Phase Composition and Microstructure as a Function of Deposition Conditions for Potassium Tantalate Niobate Thin Films Grown by Pulsed Laser Deposition

1992 ◽  
Vol 285 ◽  
Author(s):  
C.M. Cotell ◽  
R.E. Leuchtner
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Columnar Microstructure ◽  
Potassium Tantalate ◽  
Potassium Tantalate Niobate ◽  
Ambient Oxygen ◽  
Backscattering Analysis ◽  
Deposition Conditions

ABSTRACTPotassium tantalate niobate [K(Ta1−xNbx)O3 or KTNJ films were deposited by pulsed laser deposition (PLD) on (100)MgO substrates from targets of KTN with x=0.45. The effects of substrate temperature (300–700°C) and ambient oxygen pressure (50 and 300 mTorr) on the characteristics of films were investigated. At 500°C and 300 mTorr, films were amorphous with a few isolated, randomly-oriented crystalline grains of perovskite and pyrochlore. At 600°C and 300 mTorr, the films comprised a columnar microstructure consisting of a mixture of amorphous phase with (100) perovskite. At 650°C, films were almost entirely (100) perovskite. At 700°C, the films were predominantly (100) perovskite, but contained a much higher fraction of pyrochlore. At 50 mTorr, pyrochlore was found in significant fractions up to 650°C. At 700°C, films were predominantly (100) perovskite. Rutherford Backscattering analysis of the chemical composition showed that all the films were potassium-deficient and the tantalum to niobimn ratio exceeded that found in the targets for all deposition conditions. There appeared to be a relationship between oxygen pressure during deposition and the amount of potassium retained in the films.

Pulsed laser deposition of oriented V2O5 thin films

2000 ◽  
Vol 15 (10) ◽  
pp. 2249-2265 ◽  
Author(s):  
Jeanne M. McGraw ◽  
John D. Perkins ◽  
Falah Hasoon ◽  
Philip A. Parilla ◽  
Chollada Warmsingh ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Wide Range ◽  
Phase Pure ◽  
Amorphous Quartz ◽  
Quartz Substrates

We have found that by varying only the substrate temperature and oxygen pressure five different crystallographic orientations of V2O5 thin films can be grown, ranging from amorphous to highly textured crystalline. Dense, phase-pure V2O5 thin films were grown on SnO2/glass substrates and amorphous quartz substrates by pulsed laser deposition over a wide range of temperatures and oxygen pressures. The films' microstructure, crystallinity, and texturing were characterized by electron microscopy, x-ray diffraction, and Raman spectroscopy. Temperature and oxygen pressure appeared to play more significant roles in the resulting crystallographic texture than did the choice of substrate. A growth map summarizes the results and delineates the temperature and O2 pressure window for growing dense, uniform, phase-pure V2O5 films.

Effect of oxygen pressure performance of PZO thin films deposited by pulsed laser deposition at low temperature

2017 ◽  
Vol 727 ◽  
pp. 1273-1279 ◽  
Author(s):  
Shihui Yu ◽  
Binhui Zhu ◽  
Haoran Zheng ◽  
Lingxia Li ◽  
Siliang Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Effect Of Oxygen

Pulsed Laser Deposition of Epitaxial LiNbO3 Films on Sapphire Substrates Using a Single Crystal Targets

1994 ◽  
Vol 361 ◽  
Author(s):  
See-Hyung Lee ◽  
Tae W. Noh ◽  
Jai-Hyung Lee ◽  
Young-Gi Kim
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pole Figure ◽  
Oxygen Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Sapphire Substrates ◽  
Crystallographic Orientations

ABSTRACTPulsed laser deposition was used to grow epitaxial LiNbO3 films on sapphire(0001) substrates with a single crystal LiNbO3 target. Using deposition temperatures below 450 °C, LiNbO3 films with correct stoichiometry could be grown without using Li-rich targets. Rutherford backscattering spectrometry measurements showed that the oxygen to niobium ratio is 3.00 ± 0.15 to 1.00. It was also found that the crystallographic orientations of the LiNbO3 films could be controlled by adjusting the oxygen pressure during deposition. An x-ray pole figure shows that epitaxial LiNbO3 films were grown on sapphire(0001), but with twin boundaries.

Role of oxygen pressure in growth of CeAlOx thin films on Si by pulsed laser deposition

2003 ◽  
Vol 94 (1) ◽  
pp. 594-597 ◽  
Author(s):  
L. Yan ◽  
L. B. Kong ◽  
J. S. Pan ◽  
C. K. Ong
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition
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