Epitaxial Growth of (Na,K)NbO3 Films by Pulsed Laser Deposition

2013 ◽  
Vol 1494 ◽  
pp. 227-232
Author(s):  
K. Sakurai ◽  
T. Hanawa ◽  
N. Kikuchi ◽  
K. Nishio ◽  
K. Tonooka ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Piezoelectric Materials ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Lattice Constants ◽  
Crystalline Films ◽  
The Difference

ABSTRACT(Na,K)NbO3 is a promising candidate for lead-free piezoelectric materials. (Na1-xKx)NbO3 films (x = 0.3–0.7) were epitaxially grown on a (100)SrTiO3 substrate via pulsed laser deposition. The effects of substrate temperature and oxygen pressure during deposition on the crystallinity of the films were examined: both parameters affected the mosaic spread of the crystallites and the formation of an impurity phase. In this study, the optimum conditions for the preparation of highly crystalline films were a substrate temperature of 800 °C and oxygen pressure of ∼60 Pa. The lattice constants parallel and perpendicular to the substrate surface responded differently to changes in x: the constant parallel to the surface increased with increasing x, while the constant perpendicular to the surface was maximized at x = 0.5. The difference in the dependence of the lattice constants could be explained by the elastic distortion of the lattice.

Influences of oxygen pressure and substrate temperature on the quality of NdBa2Cu3Oxthin films prepared by pulsed laser deposition

2004 ◽  
Vol 17 (6) ◽  
pp. 775-780 ◽  
Author(s):  
Yusuke Ichino ◽  
Yutaka Yoshida ◽  
Yoshiaki Takai ◽  
Kaname Matsumoto ◽  
Hiroshi Ikuta ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition

Nano-Polycrystalline Vanadium Oxide Thin Films Prepared by Pulsed Laser Deposition

2008 ◽  
Vol 8 (5) ◽  
pp. 2604-2608 ◽  
Author(s):  
Y. L. Wang ◽  
M. C. Li ◽  
X. K. Chen ◽  
G. Wu ◽  
J. P. Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Vanadium Oxide ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Films ◽  
Vanadium Oxide Thin Films

Nano-polycrystalline vanadium oxide thin films have been successfully produced by pulsed laser deposition on Si(100) substrates using a pure vanadium target in an oxygen atmosphere. The vanadium oxide thin film is amorphous when deposited at relatively low substrate temperature (500 °C) and enhancing substrate temperature (600–800 °C) appears to be efficient in crystallizing VOx thin films. Nano-polycrystalline V3O7 thin film has been achieved when deposited at oxygen pressure of 8 Pa and substrate temperature of 600 °C. Nano-polycrystalline VO2 thin films with a preferred (011) orientation have been obtained when deposited at oxygen pressure of 0.8 Pa and substrate temperatures of 600–800 °C. The vanadium oxide thin films deposited at high oxygen pressure (8 Pa) reveal a mix-valence of V5+ and V4+, while the VOx thin films deposited at low oxygen pressure (0.8 Pa) display a valence of V4+. The nano-polycrystalline vanadium oxide thin films prepared by pulsed laser deposition have smooth surface with high qualities of mean crystallite size ranging from 30 to 230 nm and Ra ranging from 1.5 to 22.2 nm. Relative low substrate temperature and oxygen pressure are benifit to aquire nano-polycrystalline VOx thin films with small grain size and low surface roughness.

scholarly journals Oxygen Pressure Influence on Properties of Nanocrystalline LiNbO3 Films Grown by Laser Ablation

Nanomaterials ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 1371 ◽  
Author(s):  
Zakhar Vakulov ◽  
Evgeny Zamburg ◽  
Daniil Khakhulin ◽  
Andrey Geldash ◽  
Dmitriy A. Golosov ◽  
...  
Keyword(s):  
Energy Conversion ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Photoelectron Spectroscopy ◽  
Piezoelectric Materials ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Residual Pressure ◽  
Free Films ◽  
Energy Conversion Devices

Energy conversion devices draw much attention due to their effective usage of energy and resulting decrease in CO2 emissions, which slows down the global warming processes. Fabrication of energy conversion devices based on ferroelectric and piezoelectric lead-free films is complicated due to the difficulties associated with insufficient elaboration of growth methods. Most ferroelectric and piezoelectric materials (LiNbO3, BaTiO3, etc.) are multi-component oxides, which significantly complicates their integration with micro- and nanoelectronic technology. This paper reports the effect of the oxygen pressure on the properties of nanocrystalline lithium niobate (LiNbO3) films grown by pulsed laser deposition on SiO2/Si structures. We theoretically investigated the mechanisms of LiNbO3 dissociation at various oxygen pressures. The results of x-ray photoelectron spectroscopy study have shown that conditions for the formation of LiNbO3 films are created only at an oxygen pressure of 1 × 10−2 Torr. At low residual pressure (1 × 10−5 Torr), a lack of oxygen in the formed films leads to the formation of niobium oxide (Nb2O5) clusters. The presented theoretical and experimental results provide an enhanced understanding of the nanocrystalline LiNbO3 films growth with target parameters using pulsed laser deposition for the implementation of piezoelectric and photoelectric energy converters.

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