Improved Performance and Reliability in Aggressively-Scaled NMOS and PMOS FETs: i) Monolayer Interface Nitridation, and ii) Replacement of Stacked Oxide/Nitride Dielectrics With Optimized Oxide/Oxynitride Stacks

1999 ◽  
Vol 592 ◽  
Author(s):  
Hanyang Yang ◽  
Hiro Niimi ◽  
Gerry Lucovsky
Keyword(s):  
Second Generation ◽  
Gate Dielectrics ◽  
Tunneling Current ◽  
Silicon Oxynitride ◽  
Improved Performance

ABSTRACTThis paper demonstrates optimized performance and reliability in ‘second generation’ gate dielectrics which include monolayer nitrided Si-SiO2 interfaces, and deposited silicon oxynitride alloy gate dielectrics. Devices with oxynitride alloy gate dielectrics with an approximate 2:1 ratio of N:O display reduced tunneling current, improved hole mobilities and improved reliability compared to devices with Si-nitride gate dielectrics and the same nitrided interface.

The improved performance of a transparent ZnO thin-film transistor with AlN/Al2O3double gate dielectrics

2009 ◽  
Vol 24 (5) ◽  
pp. 055008 ◽  
Author(s):  
Jung-Min Lee ◽  
Byung-Hyun Choi ◽  
Mi-Jung Ji ◽  
Jung-Ho Park ◽  
Jae-Hong Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Dielectrics ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
Improved Performance

Structure and Growth of N2O Gate Oxynitrides

1996 ◽  
Vol 428 ◽  
Author(s):  
K. A. Ellis ◽  
E. C. Carr ◽  
R. A. Buhrman
Keyword(s):  
Flow Rate ◽  
Atomic Oxygen ◽  
Gate Dielectrics ◽  
Total Concentration ◽  
Nitrogen Sources ◽  
Interface State ◽  
Silicon Oxynitride ◽  
Nitrogen Incorporation ◽  
Exothermic Decomposition ◽  
State Generation

AbstractA series of investigations have been conducted into the properties of N2O silicon oxynitride gate dielectrics, and the various methods of their growth. One of the principle advantages of these oxides is their resistance to interface state generation. This is linked to the presense of nitrogen near the substrate interface, where it is triply bonded to silicon. It is also demonstrated that during N2O-based furnace growth, the total concentration of NOx species varies strongly with the flow rate of N2O. This has been correlated to the temperature profile of the furnace, which can be affected by the exothermic decomposition of N2O. This property has been exploited to controllably adjust the rate of nitrogen incorporation by up to a factor of three. Although nitrogen incorporation during furnace processing is generally stable, it is shown that atomic oxygen is capable of removing previously incorporated nitrogen. Sources of atomic oxygen include the decomposition of N2O during RTP treatment, N2O processing in a high flow rate furnace, or from ozone annealing.

Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability

2005 ◽  
Vol 87 (26) ◽  
pp. 262902 ◽  
Author(s):  
M. A. Quevedo-Lopez ◽  
S. A. Krishnan ◽  
P. D. Kirsch ◽  
G. Pant ◽  
B. E. Gnade ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Gate Dielectrics ◽  
Silicon Oxynitride

Effects of Nitridation by N2O or No on the Electrical Properties of Thin Gate or Tunnel Oxides

2000 ◽  
Vol 611 ◽  
Author(s):  
C. Gerardi ◽  
T. Rossetti ◽  
M. Melanotte ◽  
S. Lombardo ◽  
I. Crupi
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Nitrogen Concentration ◽  
Tunneling Current ◽  
Electron Injection ◽  
Silicon Oxynitride ◽  
Si Substrate ◽  
Substrate Interface ◽  
Thin Silicon ◽  
Tunnel Oxides

ABSTRACTWe have studied the effects of nitridation on the leakage current of thin (7-8 nm) gate or tunnel oxides. A polarity dependence of the tunneling current has been found this behavior is related to the presence of a thin silicon oxynitride layer at the SiO2/Si-substrate interface. The oxynitride layer lowers the tunneling current when electrons are injected from the interface where the oxynitride is located (substrate injection). The current flowing across the oxide when electrons are injected from the opposite interface (gate injection) is not influenced by the oxynitride. The increase of nitrogen concentration leads to a decrease of the tunneling current for substrate electron injection.

scholarly journals Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance

2019 ◽  
Vol 30 (20) ◽  
pp. 1902028 ◽  
Author(s):  
Fazel Zare Bidoky ◽  
Boxin Tang ◽  
Rui Ma ◽  
Krystopher S. Jochem ◽  
Woo Jin Hyun ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Ion Gel ◽  
Improved Performance ◽  
Screen Printed

Independent Tunneling Reductions Relative to Homogeneous Oxide Dielectrics From i) Nitrided Interfaces, and ii) Physically-Thicker Stacked Oxide/Nitride and Oxide/Oxynitride Gate Dielectrics

1999 ◽  
Vol 592 ◽  
Author(s):  
Gerry Lucovsky ◽  
Yider Wu ◽  
Yi-Mu Lee ◽  
Hanyang Yang ◽  
Hiro Niimi
Keyword(s):  
Silicon Nitride ◽  
Gate Dielectrics ◽  
Plasma Processing ◽  
Tunneling Current ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Remote Plasma ◽  
Thermally Grown Oxides ◽  
Interfacial Layers ◽  
Direct Tunneling

ABSTRACTDirect tunneling limits aggressive scaling of thermally-grown oxides to about 1.6 nm, a thickness at which the tunneling current. Jg, at one volt is ∼1 A/cm2. This paper presents results that demonstrate that stacked gate dielectrics prepared by remote plasma processing that include i) ultra-thin nitrided SiO2 interfacial layers, and ii) either silicon nitride or oxynitride bulk dielectrics can extend the equivalent oxide thickness, EOT, to 1.1-1.0 nm before Jg, > 1 A/cm2.

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