scholarly journals Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance

2019 ◽  
Vol 30 (20) ◽  
pp. 1902028 ◽  
Author(s):  
Fazel Zare Bidoky ◽  
Boxin Tang ◽  
Rui Ma ◽  
Krystopher S. Jochem ◽  
Woo Jin Hyun ◽  
...  
2009 ◽  
Vol 24 (5) ◽  
pp. 055008 ◽  
Author(s):  
Jung-Min Lee ◽  
Byung-Hyun Choi ◽  
Mi-Jung Ji ◽  
Jung-Ho Park ◽  
Jae-Hong Kwon ◽  
...  

1999 ◽  
Vol 592 ◽  
Author(s):  
Hanyang Yang ◽  
Hiro Niimi ◽  
Gerry Lucovsky

ABSTRACTThis paper demonstrates optimized performance and reliability in ‘second generation’ gate dielectrics which include monolayer nitrided Si-SiO2 interfaces, and deposited silicon oxynitride alloy gate dielectrics. Devices with oxynitride alloy gate dielectrics with an approximate 2:1 ratio of N:O display reduced tunneling current, improved hole mobilities and improved reliability compared to devices with Si-nitride gate dielectrics and the same nitrided interface.


Nano Letters ◽  
2014 ◽  
Vol 14 (2) ◽  
pp. 682-686 ◽  
Author(s):  
Feng Xu ◽  
Meng-Yin Wu ◽  
Nathaniel S. Safron ◽  
Susmit Singha Roy ◽  
Robert M. Jacobberger ◽  
...  

2008 ◽  
Vol 7 (11) ◽  
pp. 900-906 ◽  
Author(s):  
Jeong Ho Cho ◽  
Jiyoul Lee ◽  
Yu Xia ◽  
BongSoo Kim ◽  
Yiyong He ◽  
...  

2015 ◽  
Vol 107 (5) ◽  
pp. 053301 ◽  
Author(s):  
Meng-Yin Wu ◽  
Juan Zhao ◽  
Feng Xu ◽  
Tzu-Hsuan Chang ◽  
Robert M. Jacobberger ◽  
...  

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