Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability

2005 ◽  
Vol 87 (26) ◽  
pp. 262902 ◽  
Author(s):  
M. A. Quevedo-Lopez ◽  
S. A. Krishnan ◽  
P. D. Kirsch ◽  
G. Pant ◽  
B. E. Gnade ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Gate Dielectrics ◽  
Silicon Oxynitride

Improved Performance and Reliability in Aggressively-Scaled NMOS and PMOS FETs: i) Monolayer Interface Nitridation, and ii) Replacement of Stacked Oxide/Nitride Dielectrics With Optimized Oxide/Oxynitride Stacks

1999 ◽  
Vol 592 ◽  
Author(s):  
Hanyang Yang ◽  
Hiro Niimi ◽  
Gerry Lucovsky
Keyword(s):  
Second Generation ◽  
Gate Dielectrics ◽  
Tunneling Current ◽  
Silicon Oxynitride ◽  
Improved Performance

ABSTRACTThis paper demonstrates optimized performance and reliability in ‘second generation’ gate dielectrics which include monolayer nitrided Si-SiO2 interfaces, and deposited silicon oxynitride alloy gate dielectrics. Devices with oxynitride alloy gate dielectrics with an approximate 2:1 ratio of N:O display reduced tunneling current, improved hole mobilities and improved reliability compared to devices with Si-nitride gate dielectrics and the same nitrided interface.

Structure and Growth of N2O Gate Oxynitrides

1996 ◽  
Vol 428 ◽  
Author(s):  
K. A. Ellis ◽  
E. C. Carr ◽  
R. A. Buhrman
Keyword(s):  
Flow Rate ◽  
Atomic Oxygen ◽  
Gate Dielectrics ◽  
Total Concentration ◽  
Nitrogen Sources ◽  
Interface State ◽  
Silicon Oxynitride ◽  
Nitrogen Incorporation ◽  
Exothermic Decomposition ◽  
State Generation

AbstractA series of investigations have been conducted into the properties of N2O silicon oxynitride gate dielectrics, and the various methods of their growth. One of the principle advantages of these oxides is their resistance to interface state generation. This is linked to the presense of nitrogen near the substrate interface, where it is triply bonded to silicon. It is also demonstrated that during N2O-based furnace growth, the total concentration of NOx species varies strongly with the flow rate of N2O. This has been correlated to the temperature profile of the furnace, which can be affected by the exothermic decomposition of N2O. This property has been exploited to controllably adjust the rate of nitrogen incorporation by up to a factor of three. Although nitrogen incorporation during furnace processing is generally stable, it is shown that atomic oxygen is capable of removing previously incorporated nitrogen. Sources of atomic oxygen include the decomposition of N2O during RTP treatment, N2O processing in a high flow rate furnace, or from ozone annealing.

Effects of remote-surface-roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics

2004 ◽  
Vol 84 (8) ◽  
pp. 1395-1397 ◽  
Author(s):  
Shin-ichi Saito ◽  
Kazuyoshi Torii ◽  
Yasuhiro Shimamoto ◽  
Shimpei Tsujikawa ◽  
Hirotaka Hamamura ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Field Effect ◽  
Carrier Mobility ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Surface Roughness Scattering
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