Angle-Resolved XPS Studies of Interfacial Bonding States in Silicon oxynitrides Fabricated Using Different Thermal Methodologies

1999 ◽  
Vol 586 ◽  
Author(s):  
Sanjit Singh Dang ◽  
Christos G. Takoudis
Keyword(s):  
Photoelectron Spectroscopy ◽  
Silicon Oxynitride ◽  
Interfacial Bonding ◽  
X Ray ◽  
Thermal Growth ◽  
Direct Growth ◽  
Oxynitride Film ◽  
Process Property ◽  
Silicon Oxynitrides ◽  
Critical N Concentration

ABSTRACTSilicon oxynitride films, fabricated by direct thermal growth and annealing in N2O or NO, were analyzed by Angle-Resolved X-ray Photoelectron Spectroscopy (ARXPS). It is seen that for the samples processed in N2O, N is bonded as Si3N4 only, irrespective of whether the fabrication was done on bare Si or on an oxide pre-grown in O2. But the films processed in NO depict additional bonding arrangements, namely, non-stoichiometric SiOxNy, (Si-)2-N-O, and Si-N(-O)2. These bonding states are found to be concentrated in a higher proportion above the oxynitride/substrate interface. Further, it is seen that annealing of a pre-grown oxide in NO for 30 min incorporates the same bonding states as by direct growth in NO for as long as 120 min. Also, a critical N concentration (between 1.9% and 2.3%) is required for the incorporation of the Si-N(-O)2 structure, observed at 400.7 eV. Besides enhancing the overall understanding of the progress of silicon oxynitridation process in N2O and NO, these findings can help significantly towards developing process-property relationships for incorporation of N with the desired bonding state(s) at specific positions within an oxynitride film.

X-ray photoelectron spectroscopy of nitromethane adsorption products on Si(100): A model for N 1s core-level shifts in silicon oxynitride films

2004 ◽  
Vol 95 (4) ◽  
pp. 1963-1968 ◽  
Author(s):  
J. Eng ◽  
I. A. Hubner ◽  
J. Barriocanal ◽  
R. L. Opila ◽  
D. J. Doren
Keyword(s):  
Photoelectron Spectroscopy ◽  
Core Level ◽  
Silicon Oxynitride ◽  
X Ray ◽  
Level Shifts

Growth Chemistry of Ultrathin Silicon Nitride and Oxynitride Passivation Layers on Si(100)

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Kamath ◽  
B. Y. Kim ◽  
P. M. Blass ◽  
Y. M. Sun ◽  
J. M. White ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Surface Analysis ◽  
Diffusion Barrier ◽  
Photoelectron Spectroscopy ◽  
Interface Properties ◽  
X Ray ◽  
Bonding Structure ◽  
Thermal Growth ◽  
High K ◽  
Passivation Layers

ABSTRACTWe have studied the thermal growth chemistry and bonding structure of three promising ultrathin (5–20Å), nitrogen rich passivation layers on Si(100), namely-Si3N4, NO/Si(100) grown oxynitride and NO annealed SiO2. These films are intended to serve as substrates with excellent diffusion barrier/interface properties during deposition of high- K dielectrics such as Ta2O5, with tSiO2 equivalent <30Å for ULSI applications. In this paper we show that it is possible to form films with a tailored composition and nitrogen profile using techniques that can easily be integrated with existing silicon processing technology. Alternating growth and surface analysis by X-Ray Photoelectron Spectroscopy (XPS) is used to non destructively characterize the growth.

scholarly journals X-ray Photoelectron Spectroscopic Study of Nitrogen Depth Profile in Radical Nitrided Silicon Oxynitride Film

Shinku ◽  
2007 ◽  
Vol 50 (11) ◽  
pp. 672-677 ◽  
Author(s):  
Kazumasa KAWASE ◽  
Hiroshi UMEDA ◽  
Masao INOUE ◽  
Tomoyuki SUWA ◽  
Akinobu TERAMOTO ◽  
...  
Keyword(s):  
Spectroscopic Study ◽  
Depth Profile ◽  
Silicon Oxynitride ◽  
X Ray ◽  
Oxynitride Film

Ferroelectric Bi4Ti3O12Films on Si(100) with An Ultrathin Buffer Layer of Silicon Oxynitride: A Comparative Study Using X-Ray Photoelectron Spectroscopy

2001 ◽  
Vol 40 (Part 1, No. 9B) ◽  
pp. 5564-5568 ◽  
Author(s):  
Eiji Rokuta ◽  
Yasushi Hotta ◽  
Jae-hyoung Choi ◽  
Hitoshi Tabata ◽  
Hikaru Kobayashi ◽  
...  
Keyword(s):  
Comparative Study ◽  
Buffer Layer ◽  
Photoelectron Spectroscopy ◽  
Silicon Oxynitride ◽  
X Ray

Properties of Plasma Oxynitride Films On Strained Sige

1996 ◽  
Vol 446 ◽  
Author(s):  
M. Mukhopadhyay ◽  
L.K. Bera ◽  
S.K. Ray ◽  
C.K. Maiti
Keyword(s):  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Charge Trapping ◽  
Dielectric Films ◽  
Oxide Interface ◽  
X Ray ◽  
Oxynitride Film ◽  
Hole Confinement ◽  
Deposited Films ◽  
Strained Sige

AbstractThe electrical properties of oxynitride films on strained SiGe grown and deposited, respectively, using a N2O and a combination of N2O and hexamethyldisilazane (HMDS) plasma are reported. X-ray photoelectron spectroscopy (XPS) analysis of the N2O grown films have shown the incorporation of N at the oxide interface without any Ge segregation. The hole confinement in accumulation in SiGe/Si heterostructure with 90 Å N2O oxynitride film has been observed by C-V measurements. Plasma reoxidation of N2O grown dielectric films has resulted in significant improvement of electrical properties. Oxynitride films deposited using PECVD of HMDS have shown comparatively inferior properties. Films deposited from a mixture of N2O and HMDS, exhibit the highest value of Dit (1x1012 cm-2eV-1), probably due to higher amount of nitrogen incorporation at the interface. The charge trapping behavior of both the grown and deposited films have been studied. The effect of addition of NH3 in HMDS plasma and N2O oxidation prior to HMDS PECVD on the charge trapping behavior has been studied.

Chemical and Structural Characterization of Ultrathin Dielectric Films Using AEM

1999 ◽  
Vol 592 ◽  
Author(s):  
J.H.J. Scott ◽  
E.S. Windsor
Keyword(s):  
Integrated Circuits ◽  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Analytical Electron Microscopy ◽  
Silicon Oxynitride ◽  
Dielectric Films ◽  
Ion Scattering ◽  
X Ray ◽  
Integrated Intensity ◽  
Medium Energy Ion Scattering

ABSTRACTThe structure of ultrathin silicon oxynitride films, used as gate dielectrics in integrated circuits (ICs), is studied using analytical electron microscopy (AEM). Laterally homogeneous blanket films approximately 2 nm in thickness are characterized in cross section using a 300 keV field emission TEM/STEM. High resolution imaging (HRTEM) is used to investigate the accuracy and precision of film thickness measurements and their comparability to other techniques such as secondary ion mass spectrometry, spectroscopic ellipsometry, x-ray reflectivity, x-ray photoelectron spectroscopy, and medium energy ion scattering. A two dimensional magnification calibration scheme that fits a pair of basis vectors to experimental images is presented, and integrated intensity profiles are used to define film boundaries for measurement. These image processing tools simultaneously improve the repeatability of the measurements and remove subjective operator bias from the measurement process.

Transition in high-temperature oxidation kinetics of Pd-modified aluminide coatings: Role of oxygen partial pressure, heating rate, and surface treatment

2000 ◽  
Vol 15 (3) ◽  
pp. 665-675 ◽  
Author(s):  
Daniel Monceau ◽  
Karima Bouhanek ◽  
Raphaëlle Peraldi ◽  
André Malie ◽  
Bernard Pieraggi
Keyword(s):  
Heating Rate ◽  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Alumina Scale ◽  
Isothermal Oxidation ◽  
Temperature Oxidation ◽  
X Ray ◽  
Aluminide Coatings ◽  
Kinetic Transition ◽  
Direct Growth

The isothermal oxidation of Pd-modified Ni aluminide coatings was studied as a function of Po2 and temperature (900–1200 °C). A kinetic transition was observed between 900 and 1000 °C. Grazing incident x-ray diffraction, thermogravimetric analysis, x-ray photoelectron spectroscopy, scanning electron microscopy/energy dispersive spectroscopy, and secondary ion mass spectrometry analyses are consistent with the growth of δ-alumina or α-alumina below or above this transition temperature. Moreover, because Po2 was established before specimen heating, an effect of heating rate was observed and analyzed. More importantly, no kinetic transition was observed for sand-blasted specimens oxidized at low Po2. Thus conditions for the direct growth of an α-alumina scale could be determined from the reported results.

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