X-Ray Photoelectron Spectroscopy of Gate-Quality Silicon Oxynitride Films Produced by Annealing Plasma-Nitrided Si(100) in Nitrous Oxide

2001 ◽  
Vol 148 (7) ◽  
pp. F140 ◽  
Author(s):  
H.-W. Chen ◽  
D. Landheer ◽  
T.-S. Chao ◽  
J. E. Hulse ◽  
T.-Y. Huang
Keyword(s):  
Nitrous Oxide ◽  
Photoelectron Spectroscopy ◽  
Silicon Oxynitride ◽  
X Ray

X-ray photoelectron spectroscopy of nitromethane adsorption products on Si(100): A model for N 1s core-level shifts in silicon oxynitride films

2004 ◽  
Vol 95 (4) ◽  
pp. 1963-1968 ◽  
Author(s):  
J. Eng ◽  
I. A. Hubner ◽  
J. Barriocanal ◽  
R. L. Opila ◽  
D. J. Doren
Keyword(s):  
Photoelectron Spectroscopy ◽  
Core Level ◽  
Silicon Oxynitride ◽  
X Ray ◽  
Level Shifts

Ferroelectric Bi4Ti3O12Films on Si(100) with An Ultrathin Buffer Layer of Silicon Oxynitride: A Comparative Study Using X-Ray Photoelectron Spectroscopy

2001 ◽  
Vol 40 (Part 1, No. 9B) ◽  
pp. 5564-5568 ◽  
Author(s):  
Eiji Rokuta ◽  
Yasushi Hotta ◽  
Jae-hyoung Choi ◽  
Hitoshi Tabata ◽  
Hikaru Kobayashi ◽  
...  
Keyword(s):  
Comparative Study ◽  
Buffer Layer ◽  
Photoelectron Spectroscopy ◽  
Silicon Oxynitride ◽  
X Ray

Chemical and Structural Characterization of Ultrathin Dielectric Films Using AEM

1999 ◽  
Vol 592 ◽  
Author(s):  
J.H.J. Scott ◽  
E.S. Windsor
Keyword(s):  
Integrated Circuits ◽  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Analytical Electron Microscopy ◽  
Silicon Oxynitride ◽  
Dielectric Films ◽  
Ion Scattering ◽  
X Ray ◽  
Integrated Intensity ◽  
Medium Energy Ion Scattering

ABSTRACTThe structure of ultrathin silicon oxynitride films, used as gate dielectrics in integrated circuits (ICs), is studied using analytical electron microscopy (AEM). Laterally homogeneous blanket films approximately 2 nm in thickness are characterized in cross section using a 300 keV field emission TEM/STEM. High resolution imaging (HRTEM) is used to investigate the accuracy and precision of film thickness measurements and their comparability to other techniques such as secondary ion mass spectrometry, spectroscopic ellipsometry, x-ray reflectivity, x-ray photoelectron spectroscopy, and medium energy ion scattering. A two dimensional magnification calibration scheme that fits a pair of basis vectors to experimental images is presented, and integrated intensity profiles are used to define film boundaries for measurement. These image processing tools simultaneously improve the repeatability of the measurements and remove subjective operator bias from the measurement process.

Angle-Resolved XPS Studies of Interfacial Bonding States in Silicon oxynitrides Fabricated Using Different Thermal Methodologies

1999 ◽  
Vol 586 ◽  
Author(s):  
Sanjit Singh Dang ◽  
Christos G. Takoudis
Keyword(s):  
Photoelectron Spectroscopy ◽  
Silicon Oxynitride ◽  
Interfacial Bonding ◽  
X Ray ◽  
Thermal Growth ◽  
Direct Growth ◽  
Oxynitride Film ◽  
Process Property ◽  
Silicon Oxynitrides ◽  
Critical N Concentration

ABSTRACTSilicon oxynitride films, fabricated by direct thermal growth and annealing in N2O or NO, were analyzed by Angle-Resolved X-ray Photoelectron Spectroscopy (ARXPS). It is seen that for the samples processed in N2O, N is bonded as Si3N4 only, irrespective of whether the fabrication was done on bare Si or on an oxide pre-grown in O2. But the films processed in NO depict additional bonding arrangements, namely, non-stoichiometric SiOxNy, (Si-)2-N-O, and Si-N(-O)2. These bonding states are found to be concentrated in a higher proportion above the oxynitride/substrate interface. Further, it is seen that annealing of a pre-grown oxide in NO for 30 min incorporates the same bonding states as by direct growth in NO for as long as 120 min. Also, a critical N concentration (between 1.9% and 2.3%) is required for the incorporation of the Si-N(-O)2 structure, observed at 400.7 eV. Besides enhancing the overall understanding of the progress of silicon oxynitridation process in N2O and NO, these findings can help significantly towards developing process-property relationships for incorporation of N with the desired bonding state(s) at specific positions within an oxynitride film.

Silicon Oxynitride Film Thickness Measurements Using HRTEM and Grazing Incidence X-Ray Photoelectron Spectroscopy (GIXPS)

2000 ◽  
Vol 6 (S2) ◽  
pp. 60-61
Author(s):  
John Henry J. Scott ◽  
Eric W. Landree ◽  
Terrence Jach ◽  
Eric S. Windsor
Keyword(s):  
Integrated Circuits ◽  
Photoelectron Spectroscopy ◽  
Manufacturing Industry ◽  
Secondary Ion Mass Spectrometry ◽  
Grazing Incidence ◽  
Silicon Oxynitride ◽  
Ion Scattering ◽  
Statistical Process ◽  
X Ray ◽  
Medium Energy Ion Scattering

The ability to accurately and precisely measure the thickness of ultrathin (∼ 3 nm) dielectric films, used as gate dielectrics in integrated circuits, is critical to the continued success of the semiconductor manufacturing industry. Many metrology tools have been applied to this problem in the past, but recent research has focussed on ellipsometry, x-ray reflectivity, secondary-ion mass spectrometry, capacitance-voltage curves, medium energy ion scattering, high resolution transmission electron microscopy (HRTEM), and grazing incidence x-ray photoelectron spectroscopy (GIXPS). Unfortunately, these techniques disagree about a given film's thickness by amounts larger than their individual precisions. To support the statistical process control methodologies used in production wafer fabrication, these disagreements need to be investigated and the true accuracy and precision of the tools need to be determined. This work compares the ability of two techniques, HRTEM and GIXPS, to measure the thickness of silicon oxynitride films on silicon substrates.

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