Properties of Plasma Oxynitride Films On Strained Sige

1996 ◽  
Vol 446 ◽  
Author(s):  
M. Mukhopadhyay ◽  
L.K. Bera ◽  
S.K. Ray ◽  
C.K. Maiti
Keyword(s):  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Charge Trapping ◽  
Dielectric Films ◽  
Oxide Interface ◽  
X Ray ◽  
Oxynitride Film ◽  
Hole Confinement ◽  
Deposited Films ◽  
Strained Sige

AbstractThe electrical properties of oxynitride films on strained SiGe grown and deposited, respectively, using a N2O and a combination of N2O and hexamethyldisilazane (HMDS) plasma are reported. X-ray photoelectron spectroscopy (XPS) analysis of the N2O grown films have shown the incorporation of N at the oxide interface without any Ge segregation. The hole confinement in accumulation in SiGe/Si heterostructure with 90 Å N2O oxynitride film has been observed by C-V measurements. Plasma reoxidation of N2O grown dielectric films has resulted in significant improvement of electrical properties. Oxynitride films deposited using PECVD of HMDS have shown comparatively inferior properties. Films deposited from a mixture of N2O and HMDS, exhibit the highest value of Dit (1x1012 cm-2eV-1), probably due to higher amount of nitrogen incorporation at the interface. The charge trapping behavior of both the grown and deposited films have been studied. The effect of addition of NH3 in HMDS plasma and N2O oxidation prior to HMDS PECVD on the charge trapping behavior has been studied.

Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures

2010 ◽  
Vol 645-648 ◽  
pp. 689-692 ◽  
Author(s):  
Fernanda Chiarello Stedile ◽  
Silma Alberton Corrêa ◽  
Cláudio Radtke ◽  
Leonardo Miotti ◽  
Israel J.R. Baumvol ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
High Frequency ◽  
Interfacial Layer ◽  
Dielectric Films ◽  
Thermal Treatments ◽  
X Ray ◽  
Nitrogen Incorporation ◽  
Capacitance Voltage

The consequences of thermal treatments in nitric oxide atmospheres on the characteristics of dielectric films / SiC structures was investigated by high-frequency capacitance-voltage measurements, X-ray photoelectron spectroscopy, and X-ray reflectometry techniques. It was observed that nitrogen incorporation in dielectric films / SiC structures leads to the formation of a thinner interfacial layer that contains carbon. This fact was related to the improvement of electrical properties of those structures.

scholarly journals Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Relative Composition ◽  
Transmission Electron ◽  
Deposited Film ◽  
Deposited Films

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

Structure and Electrical Properties of Pulsed Laser Deposited Amorphous Carbon Nitride Thin Films

2002 ◽  
Vol 750 ◽  
Author(s):  
Yoshifumi Aoi ◽  
Kojiro Ono ◽  
Kunio Sakurada ◽  
Eiji Kamijo
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Film Surface ◽  
Input Power ◽  
Localized States ◽  
Active Nitrogen ◽  
Deposited Films

ABSTRACTAmorphous CNx thin films were deposited by pulsed laser deposition (PLD) combined with a nitrogen rf radical beam source which supplies active nitrogen species to the growing film surface. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), Raman scattering, and Fourier transform infrared (FTIR) spectroscopy. Nitrogen content of the deposited films increased with increasing rf input power and N2 pressure in the PLD chamber. The maximum N/C ratio 0.23 was obtained at 400 W of rf input power and 1.3 Pa. XPS N 1s spectra shows the existence of several bonding structures in the deposited films. Electrical properties of the deposited films were investigated. The electrical conductivity decreased with increasing N/C atomic ratio. Temperature dependence of electrical conductivity measurements indicated that electronic conduction occurred by variable-range hopping between p electron localized states.

Deposition of Cobalt Doped Zinc Oxide Thin Film Nano-Composites Via Pulsed Electron Beam Ablation

MRS Advances ◽  
2016 ◽  
Vol 1 (6) ◽  
pp. 433-439 ◽  
Author(s):  
Asghar Ali ◽  
Patrick Morrow ◽  
Redhouane Henda ◽  
Ragnar Fagerberg
Keyword(s):  
Zinc Oxide ◽  
Electron Beam ◽  
Binding Energy ◽  
Photoelectron Spectroscopy ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
Oxide Thin Film ◽  
X Ray ◽  
Pulsed Electron Beam ◽  
Deposited Films

AbstractThis study reports on the preparation of cobalt doped zinc oxide (Co:ZnO) films via pulsed electron beam ablation (PEBA) from a single target containing 20 w% Co on sapphire (0001) and silicon (100) substrates. The films have been deposited at various temperatures (350оC, 400оC, 450оC) and pulse frequencies (2 Hz, 4 Hz), under a background argon (Ar) pressure of about 3 mtorr, and an accelerating voltage of 14 kV. The surface morphology has been examined by atomic force microscopy (AFM) and scanning electron microscopy (SEM). According to SEM analysis, the films consist of nano-globules whose size is in the range of 80-178 nm. Energy dispersive x-ray spectroscopy (EDX) reveals that deposition is congruent and the prepared films contain ∼20±5 w% cobalt. It has been found that the nano-globules in the deposited films are cobalt-rich zones containing ∼70 w% Co. From x-ray photoelectron spectroscopy (XPS) analysis, Co 2p3/2 peaks indicate that the deposited films contain CoO (binding energy = 780.5 eV) as well as metallic Co (binding energy = 778.1-778.5 eV). X-ray diffraction (XRD) analysis supports the presence of metallic Co hcp phase (2ϴ = 44.47° and 47.43°) in the films.

scholarly journals X-ray Photoelectron Spectroscopy with Electrical Modulation Can Be Used to Probe Electrical Properties of Liquids and Their Interfaces at Different Stages

Langmuir ◽  
2019 ◽  
Vol 35 (52) ◽  
pp. 16989-16999
Author(s):  
Can Berk Uzundal ◽  
Ozgur Sahin ◽  
Pinar Aydogan Gokturk ◽  
Hao Wu ◽  
Frieder Mugele ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Electrical Modulation

Charge Trapping in Hafnium Silicate Films with Modulated Composition and Enhanced Permittivity

2013 ◽  
Vol 854 ◽  
pp. 125-133 ◽  
Author(s):  
Larysa Khomenkova ◽  
Xavier Portier ◽  
Abdelilah Slaoui ◽  
Fabrice Gourbilleau
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Charge Trapping ◽  
Dielectric Films ◽  
Radio Frequency Magnetron Sputtering ◽  
Hafnium Silicate ◽  
Evolution Of Microstructure

Hafnium silicate dielectric films were fabricated by radio frequency magnetron sputtering. Their microstructure and electrical properties were studied versus annealing treatment. The evolution of microstructure and the formation of alternated HfO2-rich and SiO2-rich layers were observed and explained by surface directed spinodal decomposition. The stable tetragonal HfO2 phase was formed upon an annealing at 1000-1100°C. The control of annealing temperature allowed the memory window to be achieved and to be tuned as well as the dielectric constant to be enhanced.

COMPOSITION AND NANOHARDNESS OF SiC FILMS DEPOSITED BY ELECTRON BEAM PHYSICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (06n07) ◽  
pp. 1910-1915 ◽  
Author(s):  
MIN TENG ◽  
XIAODONG HE ◽  
YUE SUN
Keyword(s):  
Electron Beam ◽  
Chemical Bonding ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Physical Vapor Deposition ◽  
Current Intensity ◽  
X Ray ◽  
Deposited Films ◽  
Sic Films

SiC films with a quantity of carbon and silicon were obtained by electron beam physical vapor deposition (EB-PVD) from a sintered SiC target with different current intensity of EB. The X-ray photoelectron spectroscopy (XPS) was used for characterization of chemical bonding states of C and Si elements in SiC films in order to study the influence of current intensity of EB on the compositions in the deposited films. At the same time, the nanohardness of the deposited films was investigated.

Composition, Bonding state, and Electrical Properties of Carbon Nitride Films Formed by Electrochemical Deposition Technique

2011 ◽  
Vol 1282 ◽  
Author(s):  
Hideo Kiyota ◽  
Mikiteru Higashi ◽  
Tateki Kurosu ◽  
Masafumi Chiba
Keyword(s):  
Electrical Properties ◽  
Electrochemical Deposition ◽  
Carbon Nitride ◽  
Chemical Deposition ◽  
Photoelectron Spectra ◽  
Metal Insulator ◽  
X Ray ◽  
Bonding State ◽  
Scale Integration ◽  
Deposited Films

ABSTRACTComposition, bonding state, and electrical properties of CNx films formed by electro-chemical deposition using liquid acrylonitrile were studied. X-ray photoelectron spectra reveal that C, N, and O are major components of the deposited films. From analysis of C 1s and N 1s spectra, the major bonding state in the CNx film is attributed to a mixture of C≡N and partially hydrogenated C=N bond. Metal-insulator-semiconductor capacitors incorporating the CNx insulating layers are fabricated to evaluate the electrical properties of the deposited films. The lowest dielectric constant k of the CNx film is determined to be 2.6 from the accumulation capacitance and the thickness of the film. It is demonstrated that the CNx film formed by electrochemical deposition is a promising low-k material for use in ultralarge-scale integration multilevel interconnections.

Effect of Oxide Charge Trapping on X-ray Photoelectron Spectroscopy of HfO2/SiO2/Si Structures

2009 ◽  
Vol 48 (4) ◽  
pp. 041201 ◽  
Author(s):  
Yasuhiro Abe ◽  
Noriyuki Miyata ◽  
Eiji Ikenaga ◽  
Haruhiko Suzuki ◽  
Koji Kitamura ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Charge Trapping ◽  
Oxide Charge ◽  
X Ray

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

2012 ◽  
Vol 198-199 ◽  
pp. 28-31
Author(s):  
Chun Ya Li ◽  
Xi Feng Li ◽  
Long Long Chen ◽  
Ji Feng Shi ◽  
Jian Hua Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Deposition Temperature ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
X Ray ◽  
Glass Substrates

Under different growth conditions, silicon Oxide (SiOx) thin films were deposited successfully on Si (100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The effects of deposition temperature on the structure and properties of SiOx films were studied using X ray diffraction (XRD), X ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. The results show that the SiOx films were amorphous at different deposition temperature. The peaks of Si2p and O1s shifted to higher binding energy with temperature increasing. The SiOx films had high transmissivity at the range of 400-900nm. By analyzing the observation and data, the influence of deposition parameters on the electrical properties and interface characteristics of SiOx thin film prepared by PECVD is systematically discussed. At last, SiOx thin film with excellent electrical properties and good interface characteristic is prepared under the relatively optimum parameters.

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