X-ray photoelectron spectroscopy of nitromethane adsorption products on Si(100): A model for N 1s core-level shifts in silicon oxynitride films

2004 ◽  
Vol 95 (4) ◽  
pp. 1963-1968 ◽  
Author(s):  
J. Eng ◽  
I. A. Hubner ◽  
J. Barriocanal ◽  
R. L. Opila ◽  
D. J. Doren
Keyword(s):  
Photoelectron Spectroscopy ◽  
Core Level ◽  
Silicon Oxynitride ◽  
X Ray ◽  
Level Shifts

Hard X‐ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces

2020 ◽  
Vol 52 (12) ◽  
pp. 933-938
Author(s):  
Oleksandr Romanyuk ◽  
Oliver Supplie ◽  
Agnieszka Paszuk ◽  
Jan Philipp Stoeckmann ◽  
Regan George Wilks ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Core Level ◽  
Spectroscopy Study ◽  
X Ray ◽  
Level Shifts

Core‐level shifts of silicon–hydrogen species on chemically treated Si surfaces studied by high‐resolution x‐ray photoelectron spectroscopy

1995 ◽  
Vol 67 (14) ◽  
pp. 2049-2051 ◽  
Author(s):  
C. H. Bjorkman ◽  
J. L. Alay ◽  
H. Nishimura ◽  
M. Fukuda ◽  
T. Yamazaki ◽  
...  
Keyword(s):  
High Resolution ◽  
Photoelectron Spectroscopy ◽  
Core Level ◽  
X Ray ◽  
Chemically Treated ◽  
Level Shifts

Elucidating the Many-Body Effect and Anomalous Pt and Ni Core Level Shifts in X-ray Photoelectron Spectroscopy of Pt–Ni Alloys

2020 ◽  
Vol 124 (4) ◽  
pp. 2313-2318 ◽  
Author(s):  
Jiatang Chen ◽  
Yun Mui Yiu ◽  
Zhiqiang Wang ◽  
Danielle Covelli ◽  
Ramaswami Sammynaiken ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Core Level ◽  
Many Body ◽  
Body Effect ◽  
X Ray ◽  
Ni Alloys ◽  
Level Shifts ◽  
The Many

scholarly journals On the prediction of core level binding energies in molecules, surfaces and solids

2018 ◽  
Vol 20 (13) ◽  
pp. 8403-8410 ◽  
Author(s):  
Francesc Viñes ◽  
Carmen Sousa ◽  
Francesc Illas
Keyword(s):  
Photoelectron Spectroscopy ◽  
State Of The Art ◽  
Binding Energies ◽  
Core Level ◽  
Chemical Environment ◽  
X Ray ◽  
Unique Information

Core level binding energies, measured by X-ray photoelectron spectroscopy providing unique information regarding the chemical environment of atoms in a system, can be estimated by a diversity of state-of-the-art accurate methods here detailed.

Energy Level Alignment at the Metal/Alq3 Interfaces Investigated with Photoemission Methods

2000 ◽  
Vol 660 ◽  
Author(s):  
Li Yan ◽  
C.W. Tang ◽  
M. G. Mason ◽  
Yongli Gao
Keyword(s):  
Energy Level ◽  
Work Function ◽  
Photoelectron Spectroscopy ◽  
Light Emission ◽  
Electron Injection ◽  
Core Level ◽  
Material Research ◽  
Level Shifts ◽  
Key Issues ◽  
Injection Materials

ABSTRACTTris(8-hydroxyquinoline) aluminum (Alq3) based organic light emission diodes (OLED) have been a focus of material research in recent years. One of the key issues in searching for a better device performance and fabricating conditions is suitable electron-injection materials. We have investigated the energy alignment and the interface formation between different metals and Alq3 using X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS). The interface is formed by depositing the target cathode material, such as Ca, Al or Al/LiF, onto an Alq3 film in a stepwise fashion in an ultrahigh vacuum environment. While the UPS results show the work function and vacuum level changes during interfaces formation, implying a possible surface dipole layer, XPS results show a more detailed and complex behavior. When a low work function metal such as Ca is deposited onto an Alq3 surface, a gap state is observed in UPS. At the same time, a new peak can be observed in the N 1s core level at a lower binding energy. These results can be characterized as charge transfer from the low work function metal to Alq3. The shifting of core levels are also observed, which may be explained by doping from metal atoms or charge diffusion. These interfaces are drastically different than the Al/Alq3 interface, which has very poor electron injection. At the Al/Alq3 interface there is a destructive chemical reaction and much smaller core level shifts are observed. Based on detailed analysis, energy level diagrams at the interface are proposed.

scholarly journals Effect of electron correlation in the decomposition of core level binding energy shifts into initial and final state contributions

2019 ◽  
Vol 21 (18) ◽  
pp. 9399-9406 ◽  
Author(s):  
Marc Figueras ◽  
Carmen Sousa ◽  
Francesc Illas
Keyword(s):  
Binding Energy ◽  
Electron Correlation ◽  
Photoelectron Spectroscopy ◽  
Core Level ◽  
Final State ◽  
X Ray ◽  
Core Level Binding Energy

The influence of electron correlation into the decomposition of core level binding energy shifts, measured by X-ray photoelectron spectroscopy (XPS), into initial and final effects is analysed for a series of molecules where these effects are noticeable.

Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy

2011 ◽  
Vol 675-677 ◽  
pp. 15-19 ◽  
Author(s):  
T. Shirasawa ◽  
S. Tanaka ◽  
T. Muro ◽  
Y. Tamenori ◽  
Y. Harada ◽  
...  
Keyword(s):  
Chemical Shifts ◽  
Emission Angle ◽  
Core Level ◽  
Silicon Oxynitride ◽  
Photoemission Spectroscopy ◽  
Structure Model ◽  
Epitaxial Silicon ◽  
Angle Dependence ◽  
Spectral Components ◽  
Level Shifts

The epitaxial silicon oxynitride (SiON) layer grown on a 6H-SiC(0001) surface is studied with core level photoemission spectroscopy. Si 2p spectra show three spectral components other than the bulk one. Chemical shifts and emission angle dependence of these components are well explained within a framework of a determined structure model of the SiON layer.

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