Sub-Nanometric Resolution Depth Profiling of Ultrathin Ono Structures

1999 ◽  
Vol 567 ◽  
Author(s):  
C. Radtke ◽  
T.D.M. Salgado ◽  
C. Krug ◽  
J. de Andrade ◽  
I.J.R. Baumvol
Keyword(s):  
Silicon Oxide ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Silicon Oxynitride ◽  
Nuclear Reaction Analysis ◽  
Near Surface ◽  
Atomic Transport ◽  
Thermal Growth ◽  
Nitride Oxide

ABSTRACTUltrathin silicon oxide/nitride/oxide films on silicon prepared by the usual route -thermal growth of an oxide followed by deposition of a nitride layer by chemical vapor deposition, and finally a reoxidation step - were characterized using isotopic substitution of N and O and depth profiling with sub-nanometric resolution. The redistribution of N and O during the oxide/nitride/oxide film processing was investigated by: i) 15N and 18O depth profiling by means of narrow nuclear resonance, and ii) 16O profiling using step-by-step chemical dissolution associated with areal densities determinations by nuclear reaction analysis. It was observed that the reoxidation step, here performed varying temperature and time, induces atomic transport of O and N thus resulting in oxide/nitride/oxide structures which are not stacked layered ones, but rather silicon oxynitride ultrathin films, in which the N concentration presents a maximum in the bulk and is moderate in the near-surface and near-interface regions.

scholarly journals Photo- and electroluminescence of oxide-nitride-oxide-silicon structures for silicon-based optoelectronics

2018 ◽  
Vol 62 (5) ◽  
pp. 546-554
Author(s):  
I. A. Romanov ◽  
L. A. Vlasukova ◽  
F. F. Komarov ◽  
I. N. Parkhomenko ◽  
N. S. Kovalchuk ◽  
...  
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Silicon Oxide ◽  
Light Emission ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Silicon Oxynitride ◽  
Radiative Relaxation ◽  
A Charge ◽  
Nitride Oxide

Oxide-nitride-oxide-silicon (SiO2/SiN0.9/SiO2/Si) structures have been fabricated by chemical vapor deposition. The elemental composition and light emission properties of “SiO2/SiN0.9/SiO2/Si” structures have been studied using Rutherford backscattering spectroscopy (RBS), photo- and electroluminescence (Pl, El). The RBS measurements has shown the presence of an intermediate silicon oxynitride layers at the SiO2–SiN0.9 interfaces.It has been shown that the photoluminescence of the SiO2/SiN0.9/SiO2/Si structure is due to the emission of a SiN0.9 layer, and the electroluminescence is attributed to the emission of silicon oxide and oxynitride layers. A broad intense band with a maximum at 1.9 eV dominates the Pl spectrum. This band attributed to the radiative recombination of excited carriers between the band tail states of the SiN0.9 layer. The origin of the less intense Pl band at 2.8 eV is associated with the presence  of nitrogen defects in the silicon nitride.El was excited in the electrolyte-dielectric-semiconductor system. The electric field strength in the SiO2 layers reached 7–8 MV/cm and exceeded this parameter in nitride layer nearly four times. The electrons accelerating in electric field of 7–8 MV/cm could heat up to energies more than 5 eV. It is sufficient for the excitation of luminescence centres in the silicon oxide and oxynitride layers. The SiO2/SiN0.9/SiO2/Si composition El bands with quantum energies of 1.9 and 2.3 eV are related to the presence of silanol groups (Si–OH) and three-coordinated silicon atoms (≡Si•) in the silicon oxide layers. The El band with an energy of 2.7 eV is attributed to the radiative relaxation of silylene (O2=Si:) centers in the silicon oxynitride regions. It is observed the least reduction of this band intensity under the influence of strong electric fields after a charge flow  of 1–3 C/cm2.

Silicon Oxynitride and Oxide-Nitride-Oxide Gate Dielectrics by Combined Plasma-Rapid Thermal Processing

1994 ◽  
Vol 342 ◽  
Author(s):  
Y. Ma ◽  
S.V. Hattangady ◽  
T. Yasuda ◽  
H. Niimi ◽  
S. Gandhi ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Silicon Oxide ◽  
Gate Dielectric ◽  
Rapid Thermal Processing ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Dielectric Films ◽  
Mos Capacitor ◽  
Nitride Oxide

ABSTRACTWe have used a combination of plasma and rapid thermal processing for the formation of thin gate-dielectric films. The bulk dielectric films investigated include silicon oxide, oxynitride and multilayer oxide-nitride-oxide heterostructures formed by plasma-assisted oxidation, remoteplasma-enhanced chemical-vapor deposition (remote-PECVD) followed by post-deposition rapid thermal annealing (RTA). Auger electron spectroscopy (AES) and infrared absorption spectroscopy (IR) have been used to study the chemistry of interface formation and the bulk dielectric chemical bonding, respectively. Electrical characterization of MOS capacitor structures incorporating these dielectrics was performed by conventional capacitance and current voltage techniques, C-V and I-V, respectively.

Polycrystalline Silocon-Oxide-Nitride-Oxide-Silicon Flash Memory on SiO2 and Si3N4 Buffer Layer for System on Panels Application

2013 ◽  
Vol 658 ◽  
pp. 120-123
Author(s):  
Sang Youl Lee ◽  
Jae Sub Oh ◽  
Seung Dong Yang ◽  
Ho Jin Yun ◽  
Kwang Seok Jeong ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Buffer Layer ◽  
Flash Memory ◽  
Polycrystalline Silicon ◽  
Silicon Oxide ◽  
Memory Device ◽  
Nitride Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nitride Oxide

For the system on panel applications, we fabricated and analyzed the polycrystalline silicon (poly-Si) silicon-oxide-nitride-oxide-silicon (SONOS) memory device on different buffer layer such as oxide or nitride. The threshold voltage (VT) and transconductance (gm) are extracted from each device and the X-Ray Diffraction (XRD) measurement is carried out to interpret these characteristics. The results show the device on oxide layer has higher mobility and lower VT than on nitride layer. From the XRD spectra, it can be explained by the fact that the grain size of poly-Si on oxide layer has larger than on nitride layer. The both devices show program/erase characteristics as the potential of SOP memory devices.

Characterizaton of Pecvd Fluorinated Silicon Oxides and Stabilization of Interaction with Metals

1998 ◽  
Vol 511 ◽  
Author(s):  
Sarah E. Kim ◽  
Christoph Steinbruichel ◽  
Atul Kumar ◽  
H. Bakhru
Keyword(s):  
Dielectric Constant ◽  
Photoelectron Spectroscopy ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Nuclear Reaction Analysis ◽  
Constant Density ◽  
Fluorine Concentration ◽  
Experimental Conditions ◽  
Silicon Oxides ◽  
Fluorinated Silicon Oxide

ABSTRACTFluorinated silicon oxide films were prepared in a plasma enhanced chemical vapor deposition reactor using TEOS, O2, and either C2F6 or NF3. Properties such as deposition rate, film refractive index, dielectric constant, density, and fluorine concentration were investigated as a function of experimental conditions. Based on nuclear reaction analysis (NRA) and Fourier Transform Infrared (FTIR) measurements, no single linear relationship was found between fluorine concentration or film density and dielectric constant. Special attention was paid to the interaction of fluorine with metals. NRA and X-ray photoelectron spectroscopy (XPS) depth profiles showed that fluorine diffuses rapidly through aluminum and piles up at the free surface. The effect of various plasma treatments was investigated to passivate the surface of fluorinated silicon oxide. CF4 - O2 plasma treatment of the fluorinated oxide before aluminum deposition produced significant improvement in inhibiting fluorine diffusion into aluminum without increasing the dielectric constant.

scholarly journals Atomic transport across the interfaces during the formation of ultrathin silicon oxide/nitride/oxide films

1998 ◽  
Vol 73 (14) ◽  
pp. 1970-1972 ◽  
Author(s):  
I. J. R. Baumvol ◽  
T. D. M. Salgado ◽  
C. Radtke ◽  
C. Krug ◽  
J. de Andrade
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Atomic Transport ◽  
Nitride Oxide

Compositional Determinations of Oxide-Nitride-Oxide Stacked Dielectric

1992 ◽  
Vol 268 ◽  
Author(s):  
G.L. Waytena ◽  
J. Hren ◽  
J.K. Weiss ◽  
P. Rez ◽  
G.G. Fountain ◽  
...  
Keyword(s):  
Energy Loss ◽  
Oxide Layer ◽  
Spatial Resolution ◽  
Silicon Oxide ◽  
Nitrogen Concentration ◽  
Light Element ◽  
Nitride Layer ◽  
Electron Holography ◽  
Computer Controlled ◽  
Nitride Oxide

ABSTRACTElectron holography, and high spatial resolution (17Å) computer controlled Parallel Electron Energy Loss Spectrometry (PEELS) were used to probe the structure of and chemical profile across a thin silicon Oxide-Nitride-Oxide (ONO) layered structure of nominal width 10Å-50Å-10Å. We found that the layer widths are on the average 13Å-28Å-18Å, the first oxide layer was discontinuous, and the second oxide layer contained nitrogen. The nitride layer had a silicon to nitrogen concentration ratio of 1.0 ± 0.1. These results show, for the first time, the power of holography in characterizing thin, light element, amorphous layers and the importance of computer controlled parallel energy loss line scans for obtaining analytical information at the highest spatial resolution with minimum dose.

scholarly journals A Review on Recent Developments in Deuteron Induced Reactions Enhancing NRA Capabilities

2020 ◽  
Vol 16 ◽  
pp. 17
Author(s):  
M. Kokkoris ◽  
P. Misaelides ◽  
A. Lagoyannis ◽  
R. Vlastou ◽  
C. T. Papadopoulos ◽  
...  
Keyword(s):  
Differential Cross Section ◽  
Cross Section ◽  
Differential Cross ◽  
Ion Beam ◽  
Depth Profiling ◽  
Light Element ◽  
Nuclear Reaction Analysis ◽  
Light Elements ◽  
Near Surface

Nuclear Reaction Analysis (NRA) is well established as one of the principal IBA methods nowadays. Among the most important NRA characteristics are its high iso- topic selectivity, its enhanced sensitivity for many nuclides, the capability of least destructive depth profiling and the possibility of simultaneous analysis of more than one light element in near–surface layers of materials. Moreover, in the particular case when deuterium is used as probing beam, critical advantages for NRA studies emerge. As NRA quantifies individual light isotopes absolutely, and can depth pro- file with nanometer resolution, it is the most suitable ion beam technique for the determination of the concentration and depth profiling of light elements in complex matrices. However, as already pointed out in the recent literature, the application of NRA to the determination of the concentration and the depth profiling of light elements is frequently impeded by the lack of adequate and/or reliable experimental differential cross section data. It is the ambition of the present work to contribute in the fields of differential cross section measurements, as well as of data evaluation and general theoretical analysis.

High‐Resolution Depth Profiling of Ultrathin Silicon Oxide/Nitride/Oxide Layers

1993 ◽  
Vol 140 (5) ◽  
pp. 1439-1441 ◽  
Author(s):  
Y. Zhang ◽  
G. S. Oehrlein ◽  
G. M. W. Kroesen ◽  
M. Wittmer ◽  
K. Stein
Keyword(s):  
High Resolution ◽  
Silicon Oxide ◽  
Depth Profiling ◽  
Oxide Layers ◽  
Nitride Oxide
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