scholarly journals Atomic transport across the interfaces during the formation of ultrathin silicon oxide/nitride/oxide films

1998 ◽  
Vol 73 (14) ◽  
pp. 1970-1972 ◽  
Author(s):  
I. J. R. Baumvol ◽  
T. D. M. Salgado ◽  
C. Radtke ◽  
C. Krug ◽  
J. de Andrade
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Atomic Transport ◽  
Nitride Oxide

Sub-Nanometric Resolution Depth Profiling of Ultrathin Ono Structures

1999 ◽  
Vol 567 ◽  
Author(s):  
C. Radtke ◽  
T.D.M. Salgado ◽  
C. Krug ◽  
J. de Andrade ◽  
I.J.R. Baumvol
Keyword(s):  
Silicon Oxide ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Silicon Oxynitride ◽  
Nuclear Reaction Analysis ◽  
Near Surface ◽  
Atomic Transport ◽  
Thermal Growth ◽  
Nitride Oxide

ABSTRACTUltrathin silicon oxide/nitride/oxide films on silicon prepared by the usual route -thermal growth of an oxide followed by deposition of a nitride layer by chemical vapor deposition, and finally a reoxidation step - were characterized using isotopic substitution of N and O and depth profiling with sub-nanometric resolution. The redistribution of N and O during the oxide/nitride/oxide film processing was investigated by: i) 15N and 18O depth profiling by means of narrow nuclear resonance, and ii) 16O profiling using step-by-step chemical dissolution associated with areal densities determinations by nuclear reaction analysis. It was observed that the reoxidation step, here performed varying temperature and time, induces atomic transport of O and N thus resulting in oxide/nitride/oxide structures which are not stacked layered ones, but rather silicon oxynitride ultrathin films, in which the N concentration presents a maximum in the bulk and is moderate in the near-surface and near-interface regions.

The Composition and Properties of PECVD Silicon Oxide Films

1985 ◽  
Vol 132 (8) ◽  
pp. 2012-2019 ◽  
Author(s):  
P. Pan ◽  
L. A. Nesbit ◽  
R. W. Douse ◽  
R. T. Gleason
Keyword(s):  
Silicon Oxide ◽  
Oxide Films

The Effect of a Silicon-Boron Phase on Thermally Grown Silicon Oxide Films

1970 ◽  
Vol 117 (2) ◽  
pp. 272 ◽  
Author(s):  
William A. FitzGibbons ◽  
Thomas Kloffenstein ◽  
Karl M. Busen
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Thermally Grown

Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories

2008 ◽  
Vol 52 (6) ◽  
pp. 844-848 ◽  
Author(s):  
Seung-Hwan Seo ◽  
Se-Woon Kim ◽  
Jang-Uk Lee ◽  
Gu-Cheol Kang ◽  
Kang-Seob Roh ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Electron Injection ◽  
Channel Width ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
Nitride Oxide ◽  
Cycling Behavior

scholarly journals Electron Beam Effects on Silicon Oxide Films – Structure and Electrical Properties

2018 ◽  
Vol 24 (S1) ◽  
pp. 1810-1811 ◽  
Author(s):  
Krishna Kanth Neelisetty ◽  
Sebastian Gutsch ◽  
Falk von Seggern ◽  
Alan Molinari ◽  
Alexander Vahl ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Silicon Oxide ◽  
Oxide Films
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